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1.
J Genet ; 97(2): 419-427, 2018 Jun.
Artigo em Inglês | MEDLINE | ID: mdl-29932062

RESUMO

Tuberous sclerosis complex (TSC) is an autosomal dominant disorder characterized by the development of hamartomas localized in various tissues which can occur in the skin, brain, kidney and other organs. TSC is caused by mutations in the TSC1 and TSC2 genes. Here we report the results from the first molecular testing of 16 Bulgarian patients and one Romanian patient in whom we found six novel mutations: four in the TSC22 gene, of which one is nonsense, two frame shift and one large deletion of 16 exons; and two in the TSC1 gene, one nonsense and other frame shift. In addition, we detected 10 previously reported mutations; some of which are described only once in the literature. Our data is similar to the previous studies with exception of the larger number of TSC1 mutations than that reported in the literature data. In total, 40% (4/10) of the mutation in the TSC2 gene are located in the GTPase-activating protein domain, while 50% (3/6) are in the TSC1 gene and clustered in exon 15. All the cases represent the typical clinical symptoms and meet the clinical criteria for TSC diagnosis. In 35% of our cases the family history was positive. Our results add novel findings in the genetic heterogeneity and pathogenesis of TSC. The genetic heterogeneity might correlate to the clinical variability among the TSC-affected families, which makes the genetic counselling a real challenge.


Assuntos
Predisposição Genética para Doença/genética , Mutação , Esclerose Tuberosa/genética , Proteínas Supressoras de Tumor/genética , Sequência de Bases , Bulgária , Análise Mutacional de DNA , Testes Genéticos , Humanos , Romênia , Esclerose Tuberosa/diagnóstico , Proteína 1 do Complexo Esclerose Tuberosa , Proteína 2 do Complexo Esclerose Tuberosa
2.
J Nanosci Nanotechnol ; 10(4): 2503-11, 2010 Apr.
Artigo em Inglês | MEDLINE | ID: mdl-20355454

RESUMO

Opposite results concerning the sign of the parasitic charge accumulated at the metal dielectric contact in RF microelectromechanical systems (MEMS) capacitive switches are found in the literature. The mechanism concerning charge injection/extraction at the metal-dielectric contact and its influence on the pull-in voltage needs to be further clarified. A model-switch, for which only one dimension is in the microns range, is used to study the behaviour of a capacitive RF MEMS switch. The aim is to analyze how the electric charge is injected/extracted into or from the dielectric material under the applied field and to obtain realistic data to understand how this parasitic charge influences the pull-in voltage Vpi and the pull-off voltage Vpo. A triangle voltage is employed to measure Vpi and Vpo, by measuring the isothermal charging/discharging currents. Our results demonstrate that Vpi is strongly dependent on the injected/extracted charge on the free surface of the dielectric. The charge injected/extracted at the bottom side of the dielectric has no influence on the actuation voltage. The charge injected/extracted on the free surface of the dielectric determines an increase of the modulus of Vpi and, eventually, the switch can fail to actuate. An estimation of the charge stored into the material was obtained (i) by measuring the charging current and the discharging current and (ii) from the value of the Vpi. The parasitic charge necessary to keep the bridge stick to the insulator is 5.3 x 10(-4) C m(-2) for our experimental conditions. The modification of the Vpi determined by the stored charge in the dielectric is analyzed. An increase of the relative dielectric permittivity by a factor of 2 produces a decrease of the actuation voltage of 10%. A variation of 30% in the elastic constant determines a variation of about 20% in the Vpi. A voltage threshold for charge injection/extraction was not observed.

3.
Eur Phys J E Soft Matter ; 14(2): 193-204, 2004 Jun.
Artigo em Inglês | MEDLINE | ID: mdl-15254839

RESUMO

The thermally stimulated current (TSC) signatures of the primary (alpha) transition and its precursor, the Johary-Goldstein (beta) relaxation, are used to probe effects of nanoconfinement on the dielectric relaxation dynamics of poly(methyl methacrylate) (PMMA) radically polymerised in situ 50 angstroms mean pore size silica-gel. Nanoconfinement leads to a broadened and low-temperature-shifted beta band (peaking at Tbeta, with deltaTbeta = T(conf.)beta - T(bulk)beta = -15 degrees C for a heating rate of 5 deg/min), signifying the occurrence of faster relaxing moieties compared to the bulk-like PMMA film. Furthermore, both TSCs and differential scanning calorimetry (DSC) estimate a rise of the glass transition temperature for the confined phase ([Formula: see text]= +13 degrees C) and an increased width for the corresponding transition signals, relative to the signals in the bulk. Simple free-volume and entropy models seem inadequate to provide a collective description of the above perturbations. The observation of a spatial heterogeneity regarding the relaxation dynamics is discussed in terms of the presence of a motional gradient, with less mobile segments near the interface and more mobile segments in the core, and the interplay of adsorption ( e.g., strong physical interactions that slow down molecular mobilities) and confinement effects ( e.g., lower entanglements concentration and local density fluctuations that provide regions of increased free space). The results suggest that in the case of high-molecular-weight polymers confined in small-pore systems, adsorption effects have considerable bearing on the glass transition phenomenon whereas confinement primarily influences side-chains' rotational mobilities. The confinement effect is expected to dominate over adsorption for PMMA phases occluded in higher pore sizes and silanised walls.

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