Enhanced Drug Delivery for Cardiac Microvascular Obstruction with an Occlusion-Infusion-Catheter.

Microvascular Obstruction (MVO) is a common consequence of acute myocardial infarction. MVO is underdiagnosed and treatment is often nonspecific and ineffective. A multi-scale in-vitro benchtop model was established to investigate drug perfusion in MVO affected microcirculation. The central element of the benchtop model was a fluidic microchip containing channels with diameters between [Formula: see text] and 50 µm representing [Formula: see text] of the microvascular tree fed by the left anterior descending artery (LAD). The outlets of the chip could be closed to mimic MVO. Two methods for intracoronary infusion of pharmacologic agents (simulated by dye) to regions with MVO were investigated using an occlusion-infusion catheter. The first case was a simple, bolus-like infusion into the LAD, whereas the second case consisted of infusion with concomitant proximal occlusion of the LAD phantom with a balloon. Results show that local dye concentration maxima in the chip with MVO were 2.2-3.2 times higher for the case with proximal balloon occlusion than for the conventional infusion method. The cumulated dose could be raised by a factor 4.6-5.2. These results suggest that drug infusion by catheter is more effective if the blood supply to the treated vascular bed is temporarily blocked by a balloon catheter.

Charge transport in a single molecule transistor probed by scanning tunneling microscopy.

We report on the scanning tunneling microscopy/spectroscopy (STM/STS) study of cobalt phthalocyanine (CoPc) molecules deposited onto a back-gated graphene device. We observe a clear gate voltage (Vg) dependence of the energy position of the features originating from the molecular states. Based on the analysis of the energy shifts of the molecular features upon tuning Vg, we are able to determine the nature of the electronic states that lead to a gapped differential conductance. Our measurements show that capacitive couplings of comparable strengths exist between the CoPc molecule and the STM tip as well as between CoPc and graphene, thus facilitating electronic transport involving only unoccupied molecular states for both tunneling bias polarities. These findings provide novel information on the interaction between graphene and organic molecules and are of importance for further studies, which envisage the realization of single molecule transistors with non-metallic electrodes.

From electroburning to sublimation: substrate and environmental effects in the electrical breakdown process of monolayer graphene.

We report on the characterization of the electrical breakdown (EB) process for the formation of tunneling nanogaps in single-layer graphene. In particular, we investigated the role of oxygen in the breakdown process by varying the environmental conditions (vacuum and ambient conditions). We show that the density of oxygen molecules in the chamber is a crucial parameter that defines the physical breakdown process: at low density, the graphene lattice is sublimating, whereas at high density, the process involved is oxidation, independent of the substrate material. To estimate the activation energies of the two processes, we use a scheme which consists of applying voltage pulses across the junction during the breakdown. By systematically varying the voltage pulse length, and estimating the junction temperature from a 1D thermal model, we extract activation energies which are consistent with the sublimation of graphene under high vacuum and the electroburning process under air. Our study demonstrates that, in our system, a better control of the gap formation is achieved in the sublimation regime.

Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiOx-Graphene Memristors.

The resistive switching behavior in SiOx-based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the switching dynamics is not only determined by the commonly observed bias voltage dependent set and reset times. We demonstrate that an internal time scale, the dead time, plays a fundamental role in the system's response to various driving signals. We associate the switching behavior with the formation of microscopically distinct SiOx amorphous and crystalline phases between the graphene electrodes. The reset transition is attributed to an amorphization process due to a voltage driven self-heating; it can be triggered at any time by appropriate voltage levels. In contrast, the formation of the crystalline ON state is conditional and only occurs after the completion of a thermally assisted structural rearrangement of the as-quenched OFF state which takes place within the dead time after a reset operation. Our results demonstrate the technological relevance of the dead time rule which enables a zero bias access of both the low and high resistance states of a phase change memory device by unipolar voltage pulses.

High-yield fabrication of nm-size gaps in monolayer CVD graphene.

Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-layer graphene electrodes. The process is implemented for graphene grown via chemical vapor deposition using an electroburning process at room temperature and in vacuum. A yield of over 95% for the gap formation is obtained. This approach allows producing single-layer graphene electrodes for molecular electronics at a large scale. Additionally, from Raman spectroscopy and electroburning carried out simultaneously, we can follow the heating process and infer the temperature at which the gap formation happens.

Graphene transistors are insensitive to pH changes in solution.

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.