Interface-limited growth of heterogeneously nucleated ice in supercooled water.

Heterogeneous ice growth exhibits a maximum in freezing rate arising from the competition between kinetics and the thermodynamic driving force between the solid and liquid states. Here, we use molecular dynamics simulations to elucidate the atomistic details of this competition, focusing on water properties in the interfacial region along the secondary prismatic direction. The crystal growth velocity is maximized when the efficiency of converting interfacial water molecules to ice, collectively known as the attachment kinetics, is greatest. We find water molecules that contact the intermediate ice layer in concave regions along the atomistically roughened surface are more likely to freeze directly. An increased roughening of the solid surface at large undercoolings consequently plays an important limiting role in the rate of ice growth, as water molecules are unable to integrate into increasingly deeper surface pockets. These results provide insight into the molecular mechanisms for self-assembly of solid phases that are important in many biological and atmospheric processes.

Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials.

Graphene nanomeshes (GNMs) formed by the creation of pore superlattices in graphene are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional electronvolt band gaps. The utility of GNMs would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNMs-both n- and p-doping are achieved within a rigid-band picture. Such chelated or "crown" GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.

The role of chemistry in graphene doping for carbon-based electronics.

Graphene forms an important two-dimensional (2D) material class that displays both a high electronic conductivity and optical transparency when doped. Yet, the microscopic origin of the doping mechanism in single sheet or bulk intercalated systems remains unclear. Using large-scale ab initio simulations, we show the graphene surface acts as a catalytic reducing/oxidizing agent, driving the chemical disproportionation of adsorbed dopant layers into charge-transfer complexes which inject majority carriers into the 2D carbon lattice. As pertinent examples, we focus on the molecular SbCl(5) and HNO(3) intercalates, and the solid compound AlCl(3). Identifying the microscopic mechanism for the catalytic action of graphene is important, given the availability of large area graphene sheets, to spur research into new redox reactions for use in science and technology.

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class.

A generalization of the charge equilibration method for nonmetallic materials.

Assigning effective atomic charges that properly reproduce the electrostatic fields of molecules is a crucial step in the construction of accurate interatomic potentials. We propose a new approach to calculate these charges, which as previous approaches are, is based on the idea of charge equilibration. However, we only allow charge to flow between covalently bonded neighbors by using the concept of so-called split charges. The semiempirical fit parameters in our approach do not only reflect atomic properties (electronegativity and atomic hardness) but also bond-dependent properties. The new method contains two popular but hitherto disjunct approaches as limiting cases. We apply our methodology to a set of molecules containing the elements silicon, carbon, oxygen, and hydrogen. Effective charges derived from electrostatic potential surfaces can be predicted more than twice as accurately as with previous works, at the expense of one additional fit parameter per bond type controlling the polarizability between two bonded atoms. Additional bond-type parameters can be introduced, but barely improve the results. An increase in accuracy of only 30% over existing techniques is achieved when predicting Mulliken charges. However, this could be improved with additional bond-type parameters.