UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume.

Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the growth of complex oxide thin films. A wide range of parameters is known to influence the properties of the used samples and thin films, especially the oxygen-vacancy concentration. One parameter has up to this point been neglected due to the challenges of separating its influence from the influence of the impinging species during growth: the UV-radiation of the plasma plume. We here present experiments enabled by a specially designed holder to allow a separation of these two influences. The influence of the UV-irradiation during pulsed laser deposition on the formation of oxygen-vacancies is investigated for the perovskite model material SrTiO3. The carrier concentration of UV-irradiated samples is nearly constant with depth and time. By contrast samples not exposed to the radiation of the plume show a depth dependence and a decrease in concentration over time. We reveal an increase in Ti-vacancy-oxygen-vacancy-complexes for UV irradiated samples, consistent with the different carrier concentrations. We find a UV enhanced oxygen-vacancy incorporation rate as responsible mechanism. We provide a complete picture of another influence parameter to be considered during pulsed laser depositions and unravel the mechanism behind persistent-photo-conductivity in SrTiO3.

Controllable formation of nanoscale patterns on TiO2 by conductive-AFM nanolithography.

We report on the nanopatterning of double-bond-terminated silane (5-hexenyltrichlorosilane, HTCS) molecules on titania (TiO2) using conductive atomic force microscopy (AFM). The influences of tip electrostatic potential and scanning velocity, relative humidity and of the repeated application of voltage on the topographic height, width, and hydrophilic and hydrophobic contrast of the resultant patterns were investigated. Tip voltage and tip velocity ( v) were applied between -10 V