Atomic structures of the defective SrTiO3 (001) surface.

Surface structures of defective SrTiO(3) (001) have been studied by using scanning probe microscopy and density functional theory calculations. We observed several defective surface structures with true atomic resolution under reducing ultrahigh vacuum conditions. It is found that all the defects are terminated by (001), (100) and (010) microfacets of the TiO(2) plane. We propose microfaceting TiO(2) termination with Sr adatom models. The formation of various types of defects is driven by the changes of the surface stoichiometry depending on surface preparations.

Fabrication of DNA nanowires by orthogonal self-assembly and DNA intercalation on a Au patterned Si/SiO2 surface.

A novel Ru complex bearing both an acridine group and anchoring phosphonate groups was immobilized on a surface in order to capture double-stranded DNAs (dsDNAs) from solution. At low surface coverage, the atomic force microscopy (AFM) image revealed the "molecular dot" morphology with the height of the Ru complex ( approximately 2.5 nm) on a mica surface, indicating that four phosphonate anchor groups keep the Ru complex in an upright orientation on the surface. Using a dynamic molecular combing method, the DNA capture efficiency of the Ru complex on a mica surface was examined in terms of the effects of the number of molecular dots and surface hydrophobicity. The immobilized surface could capture DNAs; however, the optimal number of molecular dots on the surface as well as the optimal pull-up speed exist to obtain the extended dsDNAs on the surface. Applying this optimal condition to a Au-patterned Si/SiO 2 (Au/SiO 2) surface, the Au electrode was selectively covered with the Ru complex by orthogonal self-assembly of 4-mercaptbutylphosphonic acid (MBPA), followed by the formation of a Zr (4+)-phosphonate layer and the Ru complex. At the same time, the remaining SiO 2 surface was covered with octylphosphonic acid (OPA) by self-assembly. The selective immobilization of the Ru complex only on the Au electrode was identified by time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging on the chemically modified Au/SiO 2 surface. The construction of DNA nanowires on the Au/SiO 2 patterned surface was accomplished by the molecular combing method of the selective immobilized Ru complex on Au electrodes. These interconnected nanowires between Au electrodes were used as a scaffold for the modification of Pd nanoparticles on the DNA. Furthermore, Cu metallization was achieved by electroless plating of Cu metal on a priming of Pd nanoparticles on the Pd-covered DNA nanowires. The resulting Cu nanowires showed a metallic behavior with relatively high resistance.

Surface structures of rutile TiO2 (011).

Surface structures of rutile TiO(2) (011) are determined by a combination of noncontact atomic force microscopy (NC-AFM), scanning tunneling microscopy (STM), and density functional calculations. The surface exhibits rowlike (n x 1) structures running along the [01] direction. Microfaceting missing-row structural models can explain the experimental results very well. Calculated images for NC-AFM and STM are in good agreement with the experimental results. A decrease of the density of dangling bonds stabilizes the surface energy, which results in the microfaceting missing-row reconstructions.

Microfaceting explains complicated structures on rutile TiO2 surfaces.

Surface structures on rutile TiO2 (001) have been studied by using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional calculations. Prior investigations have observed many kinds of complicated surface structures; however, detailed atomic structures and the mechanism of the reconstructions are still unknown. We evaluate the energetical stability of the surface structures. The calculational results suggest that a [111] microfaceting model is energetically stable compared with the unreconstructed (1 x 1) model. We propose microfaceting structural models that are in good agreement with atomically resolved STM images. This structural concept can be extended to other rutile TiO2 surfaces in general.

Alkyl chain conformation and the electronic structure of octyl heavy chalcogenolate monolayers adsorbed on Au(111).

Adsorption states of dioctyl dichalcogenides (dioctyl disulfide, dioctyl diselenide, and dioctyl ditelluride) arranged on Au(111) have been studied by X-ray photoelectron spectroscopy (XPS), infrared-visible sum-frequency generation (SFG), and ultraviolet photoelectron spectroscopy (UPS). XPS measurements suggest that dioctyl dichalcogenides dissociatively adsorbed on Au(111) surfaces to form the corresponding monolayers having chalcogen-gold covalent bonds. The elemental compositions of octanechalcogenolates on Au(111) indicate that the saturation coverages of the octyl heavy chalcogenolate (OcSe, OcTe) monolayers are lower than that of the octanethiolate (OcS) self-assembled monolayers (SAMs). The SFG observations of the CH(2) vibrational bands for the heavy chalcogenolate monolayers strongly suggest that a discernible amount of gauche conformation exists in the monolayers, while OcS SAMs adopt highly ordered all-trans conformation. The intensity ratio of the symmetric and asymmetric CH(3) stretching vibration modes measured by SFG shows that the average tilt angle of the methyl group of the OcSe monolayers is greater than that of the OcS SAMs. The larger tilt angle of the methyl group and the existence of a discernible amount of gauche conformation in the OcSe monolayers are due to the lower surface coverage of the OcSe monolayers compared with the OcS SAMs. The smaller polarization dependence in the angle-resolved UPS (ARUPS) spectra of the OcSe monolayers than that of the OcS SAMs is caused by the more disordered structures of the alkyl chain in the former. XPS, SFG, and ARUPS measurements indicate a similar tendency for the OcTe monolayers. The density of states (DOS) observed by UPS at around 1.3 eV for OcS adsorbed on Au(111) is considered to be the antibonding state of the Au-sulfur bond. Similar DOS is also observed by UPS at around 1.0 eV for the OcSe monolayers and at approximately 1.6 eV for the OcTe monolayers on Au(111).

Adsorption states of dialkyl ditelluride autooxidized monolayers on Au(111).

Organic ditellurides (R2Te2 where R = n-butyl (C4), n-octyl (C8), and n-cetyl (C16)) were synthesized, and their adsorption states after oxidation on Au(111) surfaces were studied by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), theoretical analyses, near-edge X-ray absorption fine structure (NEXAFS) measurements, contact angle measurements, and atomic force microscopy (AFM). The obtained results show that dialkyl ditellurides form autooxidized monolayers (AMs) on the surfaces under ambient conditions and that the oxidation process is accelerated by ambient light. XPS, UPS, and theoretical analyses suggest that the autooxidized ditelluride species consist of polymers or oligomers with Te-O-Te-O network structures stabilized by oxygen bridges between tellurium molecules following the cleavage of tellurium-gold bonds. NEXAFS and contact angle measurements indicate that the average tilt angles of the alkyl chains from the surface normal are smaller for the AMs of dialkyl ditellurides having longer alkyl chains. AFM measurements show defects and roughness features around a few angstroms in height on the surfaces of the dialkyl ditelluride AMs.

Effective insulating properties of autooxidized monolayers using organic ditellurides.

Dialkyl ditellurides adsorb on Au(111) surfaces by wet deposition to form highly resistive autooxidized monolayers (AMs) due to the automatic formation of oxidized tellurium species after the adsorption of ditellurides on the surfaces under air in contrast to the case of the lighter dichalcogenides such as disulfides and diselenides. The ditelluride AMs could be applied to the selective fabrication of effective resistance, ferroelectric layers, piezoelectric parts, and/or new imaging systems using the feature of tellurium oxide in small device circuits.