Polycrystalline silicon PhC cavities for CMOS on-chip integration.

In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects.

Frequency modulated hybrid photonic crystal laser by thermal tuning.

We demonstrate frequency modulation (FM) in an external cavity (EC) III-V/silicon laser, comprising a reflective semiconductor optical amplifier (RSOA) and a silicon nitride (SiN) waveguide vertically coupled to a 2D silicon photonic crystal (PhC) cavity. The PhC cavity acts as a tunable narrowband reflector giving wavelength selectivity. The FM was achieved by thermo-optical modulation of the reflector via a p-n junction. Single-mode operation was ensured by the short cavity length, overlapping only one longitudinal laser mode with the reflector. We investigate the effect of reflector modulation theoretically and experimentally and predict a substantial tracking of the resonator by the laser frequency with very small intensity modulation (IM).

Thermally stable hybrid cavity laser based on silicon nitride gratings.

In this paper, we show the experimental results of a thermally stable Si3N4 external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 µm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si3N4 Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Tight focusing of laser light using a chromium Fresnel zone plate.

Using near-field scanning microscopy, we demonstrate that a 15-µm zone plate fabricated in a 70-nm chromium film sputtered on a glass substrate and having a focal length and outermost zone's width equal to the incident wavelength λ = 532 nm, focuses a circularly polarized Gaussian beam into a circular subwavelength focal spot whose diameter at the full-width of half-maximum intensity is FWHM = 0.47λ. This value is in near-accurate agreement with the FDTD-aided numerical estimate of FWHM = 0.46λ. When focusing a Gaussian beam linearly polarized along the y-axis, an elliptic subwavelength focal spot is experimentally found to measure FWHMx = 0.42λ (estimated value FWHMx = 0.40λ) and FWHMy = 0.64λ. The subwavelength focal spots presented here are the tightest among all attained so far for homogeneously polarized beams by use of non-immersion amplitude zone plates.

Thin high numerical aperture metalens.

We designed, fabricated, and characterized a thin metalens in an amorphous silicon film of diameter 30 µm, focal length equal to the incident wavelength 633 nm. The lens is capable of simultaneously manipulating the state of polarization and phase of incident light. The lens converts a linearly polarized beam into radially polarized light, producing a subwavelength focus. When illuminated with a linearly polarized Gaussian beam, the lens produces a focal spot whose size at full-width half-maximum intensity is 0.49λ and 0.55λ (λ is incident wavelength). The experimental results are in good agreement with the numerical simulation, with the simulated focal spot measuring 0.46λ and 0.52λ. This focal spot is less than all other focal spots obtained using metalenses.

Microlens-aided focusing of linearly and azimuthally polarized laser light.

We have investigated a four-sector transmission polarization converter (4-SPC) for a wavelength of 633 nm, that enables the conversion of a linearly polarized incident beam into a mixture of linearly and azimuthally polarized beams. It was numerically shown that by placing a Fresnel zone plate of focal length 532 nm immediately after the 4-SPC, the incident light can be focused into an oblong subwavelength focal spot whose size is smaller than the diffraction limit (with width and breadth, respectively, measuring FWHM = 0.28λ and FWHM = 0.45λ, where λ is the incident wavelength and FWHM stands for full-width at half maximum of the intensity). After passing through the 4-SPC, light propagates in free space over a distance of 300 µm before being focused by a Fresnel zone plate (ZP), resulting in focal spot measuring 0.42λ and 0.81λ. The focal spot was measured by a near-field microscope SNOM, and the transverse E-field component of the focal spot was calculated to be 0.42λ and 0.59λ. This numerical result was verified experimentally, giving a focal spot of smaller and larger size, respectively, measuring 0.46λ and 0.57λ. To our knowledge, this is the first implementation of polarization conversion and subwavelength focusing of light using a pair of transmission micro-optic elements.

Hydrogen induced optically-active defects in silicon photonic nanocavities.

We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.

Planar surface implanted diffractive grating couplers in SOI.

Grating couplers are used to efficiently couple light from an optical fibre to a silicon waveguide as they allow light to be coupled into or out from any location on the device without the need for cleaving. However, using the typical surface relief grating fabrication method reduces surface planarity and hence makes further processing more difficult. The ability to manufacture high quality material layers on top of a grating coupler allows multiple active optical layers to be realized for multi-layer integrated optical circuits, and may enable monolithic integration of optical and electronic circuits on separate layers. Furthermore, the nature of the refractive index change may enable removal via rapid thermal annealing for wafer scale testing applications. We demonstrate for the first time a coupling device utilising a refractive index change introduced by lattice disorder. Simulations show 44% of the power can be extracted from the waveguide by using uniform implanted gratings, which is not dissimilar to the performance of typical uniform surface relief gratings currently used. Losses determined empirically, of 5.5 dB per coupler have been demonstrated.

Enhanced 1.54 µm emission in Y-Er disilicate thin films on silicon photonic crystal cavities.

We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 µm is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 µm wavelength on a silicon platform.

Tight focusing with a binary microaxicon.

Using a near-field scanning microscope (NT-MDT) with a 100 nm aperture cantilever held 1 µm apart from a microaxicon of diameter 14 µm and period 800 nm, we measure a focal spot resulting from the illumination by a linearly polarized laser light of wavelength λ=532 nm, with its FWHM being equal to 0.58λ, and the depth of focus being 5.6λ. The rms deviation of the focal spot intensity from the calculated value is 6%. The focus intensity is five times larger than the maximal illumination beam intensity.

Four-wave mixing in slow light engineered silicon photonic crystal waveguides.

We experimentally investigate four-wave mixing (FWM) in short (80 µm) dispersion-engineered slow light silicon photonic crystal waveguides. The pump, probe and idler signals all lie in a 14 nm wide low dispersion region with a near-constant group velocity of c/30. We measure an instantaneous conversion efficiency of up to -9dB between the idler and the continuous-wave probe, with 1W peak pump power and 6 nm pump-probe detuning. This conversion efficiency is found to be considerably higher (>10 × ) than that of a Si nanowire with a group velocity ten times larger. In addition, we estimate the FWM bandwidth to be at least that of the flat band slow light window. These results, supported by numerical simulations, emphasize the importance of engineering the dispersion of PhC waveguides to exploit the slow light enhancement of FWM efficiency, even for short device lengths.

Planar photonic crystal cavities with far-field optimization for high coupling efficiency and quality factor.

Different types of planar photonic crystal cavities aimed at optimizing the far-field emission pattern are designed and experimentally assessed by resonant scattering measurements. We systematically investigate the interplay between achieving the highest possible quality (Q) factor and maximizing the in- and out-coupling efficiency into a narrow emission cone. Cavities operate at telecommunications wavelengths, i.e. around approximately 1.55 microm, and are realized in silicon membranes. A strong modification of the far-field emission pattern, and therefore a substantial increase of the coupling efficiency in the vertical direction, is obtained by properly modifying the holes around L3, L5 and L7 type PhC cavities, as we predict theoretically and show experimentally. An optimal compromise yielding simultaneously a high Q-factor and a large coupling to the fundamental cavity mode is found for a L7-type cavity with a measured Q congruent with 62000, whose resonant scattering efficiency is improved by about two orders of magnitude with respect to the unmodified structure. These results are especially useful for prospective applications in light emitting devices, such as nano-lasers or single-photon sources, in which vertical in- and out-coupling of the electromagnetic field is necessarily required.

Optical signal processing on a silicon chip at 640Gb/s using slow-light.

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80microm) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

Loss engineered slow light waveguides.

Slow light devices such as photonic crystal waveguides (PhCW) and coupled resonator optical waveguides (CROW) have much promise for optical signal processing applications and a number of successful demonstrations underpinning this promise have already been made. Most of these applications are limited by propagation losses, especially for higher group indices. These losses are caused by technological imperfections ("extrinsic loss") that cause scattering of light from the waveguide mode. The relationship between this loss and the group velocity is complex and until now has not been fully understood. Here, we present a comprehensive explanation of the extrinsic loss mechanisms in PhC waveguides and address some misconceptions surrounding loss and slow light that have arisen in recent years. We develop a theoretical model that accurately describes the loss spectra of PhC waveguides. One of the key insights of the model is that the entire hole contributes coherently to the scattering process, in contrast to previous models that added up the scattering from short sections incoherently. As a result, we have already realised waveguides with significantly lower losses than comparable photonic crystal waveguides as well as achieving propagation losses, in units of loss per unit time (dB/ns) that are even lower than those of state-of-the-art coupled resonator optical waveguides based on silicon photonic wires. The model will enable more advanced designs with further loss reduction within existing technological constraints.

High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Optical filter with very large stopband (approximately 300 nm) based on a photonic-crystal vertical-directional coupler.

We have designed, fabricated, and demonstrated a vertical directional coupler based on the coupling between a polymer waveguide and a W1 photonic crystal waveguide. The filters have a bandwidth of approximately 2 nm within a stopband of Delta lambda approximately 300 nm and an on-chip insertion loss of 1 dB. This is the first (to our knowledge) demonstration of a filter with such a large stopband that overcomes the bandwidth limitation of existing filters.

Silica-embedded silicon photonic crystal waveguides.

We report on the fabrication and characterization of silicon photonic crystal waveguides completely embedded in silica. These waveguides offer a robust alternative to air-membranes and are fully compatible with monolithic integration. Despite the reduced refractive index contrast compared to the air-membranes, these waveguides offer a considerable operating range of approximately 10 nm in the 1550 nm window. While the reduced index contrast weakens the perturbations due to surface roughness, we measure losses of 35 +/- 3dB/cm compared to 12 +/- 3 dB/cm for nominally identical air-membranes. Numerical analysis reveals that the difference in loss results from the different mode distribution and group index of the respective waveguide modes. Radius disorder is used as a fitting parameter in the numerical simulations with the best fits found for disorder levels of 1.4 - 1.7 nm RMS, which attest to the high quality of our structures.

Photonic crystal laser with mode selective mirrors.

The mini-stopband (MSB) of a W3 line-defect photonic crystal waveguide is used as a mirror for a GaAs based quantum-dot laser. Single mode, continuous-wave lasing is demonstrated for broad area lasers up to a current of 125 mA (2.7 x laser threshold), which demonstrates the high degree of mode selectivity of the MSB mirror. FDTD calculations indicate that optimisation of the mirror interface could lead to a further fourfold increase in reflectivity resulting in significantly reduced thresholds.

Self-collimating photonic crystal polarization beam splitter.

We present theoretical and experimental results of a polarization splitter device that consists of a photonic crystal (PhC) slab, which exhibits a large reflection coefficient for TE and a high transmission coefficient for TM polarization. The slab is embedded in a PhC tile operating in the self-collimation mode. Embedding the polarization-discriminating slab in a PhC with identical lattice symmetry suppresses the in-plane diffraction losses at the PhC-non-PhC interface. The optimization of the PhC-non-PhC interface is thereby decoupled from the optimization of the polarizing function. Transmissions as high as 35% for TM- and 30% for TE-polarized light are reported.