Dielectric functions of a growing silver film determined using dynamic in situ spectroscopic ellipsometry.

The dielectric functions of plasma deposited silver on SiO2 through all stages of Volmer-Weber growth at room temperature and 150 degrees C were determined unambiguously by applying a model-independent inversion method to dynamic in situ spectroscopic ellipsometric data. The results show large differences in the localized plasmon resonance and the percolation threshold at the two temperatures. Using these model-independent dielectric functions we assess the effectiveness of modelling the plasmon resonance by fitting a Lorentz oscillator. The methods show agreement for the position of the plasmon resonance below the percolation threshold and for the effective film thickness up to 5.6 nm at room temperature and 11.5 nm at 150 degrees C, however the line shape of the resonance is described by the Lorentzian only in the early stages of film growth.

Dynamic spectroscopic ellipsometry determination of nanostructural changes in plasmonic silver films.

Dynamic in situ spectroscopic ellipsometry is used to probe post-deposition nano-structural changes in silver films at room temperature in the pre- and post-coalescence stages of Volmer-Weber growth. In the island growth phase the Maxwell-Garnett theory is used to determine structural changes in the island film. Changes in the plasmon resonance frequency indicate an increased distance between islands which explain pre-coalescence resistivity changes. Post-coalescence changes in the resistivity are determined to be due to grain growth. A reduction in film thickness of 0.2 - 0.3 nm is also observed. The results are used to evaluate recent competing theories based on in situ stress measurements.