Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty.

The universality of physical phenomena is a pivotal concept underlying quantum standards. In this context, the realization of a quantum current standard using silicon single-electron pumps necessitates the verification of the equivalence across multiple devices. Herein, we experimentally investigate the universality of pumped currents from two different silicon single-electron devices which are placed inside the cryogen-free dilution refrigerator whose temperature (mixing chamber plate) was ∼150 mK under the operation of the pump devices. By direct comparison using an ultrastable current amplifier as a galvanometer, we confirm that two pumped currents are consistent with ∼1 ppm uncertainty. Furthermore, we realize quantum-current multiplication with a similar uncertainty by adding the currents of two different gigahertz (GHz)-operated silicon pumps, whose generated currents are confirmed to be identical. These results pave the way for realizing a quantum current standard in the nanoampere range and a quantum metrology triangle experiment using silicon pump devices.

Cigarette smoke induces mitochondrial DNA damage and activates cGAS-STING pathway: application to a biomarker for atherosclerosis.

Cigarette smoking is a major risk factor for atherosclerosis. We previously reported that DNA damage was accumulated in atherosclerotic plaque, and was increased in human mononuclear cells by smoking. As vascular endothelial cells are known to modulate inflammation, we investigated the mechanism by which smoking activates innate immunity in endothelial cells focusing on DNA damage. Furthermore, we sought to characterize the plasma level of cell-free DNA (cfDNA), a result of mitochondrial and/or genomic DNA damage, as a biomarker for atherosclerosis. Cigarette smoke extract (CSE) increased DNA damage in the nucleus and mitochondria in human endothelial cells. Mitochondrial damage induced minority mitochondrial outer membrane permeabilization, which was insufficient for cell death but instead led to nuclear DNA damage. DNA fragments, derived from the nucleus and mitochondria, were accumulated in the cytosol, and caused a persistent increase in IL-6 mRNA expression via the cyclic GMP-AMP synthase (cGAS)-stimulator of interferon genes (STING) pathway. cfDNA, quantified with quantitative PCR in culture medium was increased by CSE. Consistent with in vitro results, plasma mitochondrial cfDNA (mt-cfDNA) and nuclear cfDNA (n-cfDNA) were increased in young healthy smokers compared with age-matched nonsmokers. Additionally, both mt-cfDNA and n-cfDNA were significantly increased in patients with atherosclerosis compared with the normal controls. Our multivariate analysis revealed that only mt-cfDNA predicted the risk of atherosclerosis. In conclusion, accumulated cytosolic DNA caused by cigarette smoke and the resultant activation of the cGAS-STING pathway may be a mechanism of atherosclerosis development. The plasma level of mt-cfDNA, possibly as a result of DNA damage, may be a useful biomarker for atherosclerosis.

Dual-gate control of the surface carriers of the highly-bulk-resistive topological insulator Sn0.02Bi1.08Sb0.9Te2S.

Exotic surface states of topological insulators have long attracted the attention of researchers. Recently, surface-dominant electrical transport in topological insulators has been observed; however, surface conduction in topological insulators is still not fully understood. To address this knowledge gap, we measured the transport properties of a thin flake of a highly bulk-resistive topological insulator, Sn0.02Bi1.08Sb0.9Te2S (Sn-BSTS), whose carrier density was controlled with the field effect. Single crystals of Sn-BSTS were synthesized by the Bridgman method, and Hall devices were fabricated with exfoliated flakes. The bottom gate structure was used to control the bottom surface of a Sn-BSTS flake. The measured Hall resistance was analyzed using the two-band model, which quantitatively showed that ambipolar conduction was achieved. In addition, the carriers on the top surface were controlled by the formation of an electrical double layer by an ionic liquid. With a top-gate voltage of -1.5 V, a massive number of p-type carriers were induced on the top surface of the Sn-BSTS flake, as also confirmed with the two-band model. The longitudinal resistance was also found to be affected by the carrier density. The magnetoresistance was enhanced when n- and p-type carriers coexisted on the top and bottom surfaces. In particular, the magnetoresistance was quantitatively shown to increase when the densities of n- and p-type carriers were similar. This study is the first to quantitatively analyze the conduction in Sn-BSTS in the presence of multiple types of carriers. Our findings pave the way for a quantitative understanding of transport phenomena in topological insulators.

Dynamical coupling between a nuclear spin ensemble and electromechanical phonons.

Dynamical coupling with high-quality factor resonators is essential in a wide variety of hybrid quantum systems such as circuit quantum electrodynamics and opto/electromechanical systems. Nuclear spins in solids have a long relaxation time and thus have the potential to be implemented into quantum memories and sensors. However, state manipulation of nuclear spins requires high-magnetic fields, which is incompatible with state-of-the-art quantum hybrid systems based on superconducting microwave resonators. Here we investigate an electromechanical resonator whose electrically tunable phonon state imparts a dynamically oscillating strain field to the nuclear spin ensemble located within it. As a consequence of the dynamical strain, we observe both nuclear magnetic resonance (NMR) frequency shifts and NMR sidebands generated by the electromechanical phonons. This prototype system potentially opens up quantum state engineering for nuclear spins, such as coherent coupling between sound and nuclei, and mechanical cooling of solid-state nuclei.

Gate-controlled electromechanical backaction induced by a quantum dot.

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.