Constructing custom thermodynamics using deep learning.

One of the most exciting applications of artificial intelligence is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. Here we develop a platform based on a generalized Onsager principle to learn macroscopic dynamical descriptions of arbitrary stochastic dissipative systems directly from observations of their microscopic trajectories. Our method simultaneously constructs reduced thermodynamic coordinates and interprets the dynamics on these coordinates. We demonstrate its effectiveness by studying theoretically and validating experimentally the stretching of long polymer chains in an externally applied field. Specifically, we learn three interpretable thermodynamic coordinates and build a dynamical landscape of polymer stretching, including the identification of stable and transition states and the control of the stretching rate. Our general methodology can be used to address a wide range of scientific and technological applications.

Automated electrokinetic stretcher for manipulating nanomaterials.

In this work, we present an automated platform for trapping and stretching individual micro- and nanoscale objects in solution using electrokinetic forces. The platform can trap objects at the stagnation point of a planar elongational electrokinetic field for long time scales, as demonstrated by the trapping of <100 nm polystyrene beads and DNA molecules for minutes, with a standard deviation in displacement from the trap center <1 µm. This capability enables the stretching of deformable nanoscale objects in a high-throughput fashion, as illustrated by the stretching of more than 400 DNA molecules within ∼4 hours. The flexibility of the electrokinetic stretcher opens up numerous possibilities for complex manipulation, with sequential stretching of a molecule at different voltages and multiple stretch-relaxation cycles of the same molecule as examples. The platform described provides an automated, high-throughput method to track and manipulate objects for real-time studies of micro- and nanoscale systems.

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures.

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin Ga2O3 dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS2 is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.

Defect Passivation Using a Phosphonic Acid Surface Modifier for Efficient RP Perovskite Blue-Light-Emitting Diodes.

Defect management strategies are vital for enhancing the performance of perovskite-based optoelectronic devices, such as perovskite-based light-emitting diodes (PeLEDs). As additives can fucntion both as acrystallization modifier and/or defect passivator, a thorough study on the roles of additives is essential, especially for blue emissive Pe-LEDs, where the emission is strictly controlled by the n-domain distribution of the Ruddlesden-Popper (RP, L2An-1PbnX3n+1, where L refers to a bulky cation, while A and X are monovalent cation, and halide anion, respectively) perovskite films. Of the various additives that are available, octyl phosphonic acid (OPA) is of immense interest because of its ability to bind with uncoordinated Pb2+ ( notorious for nonradiative recombination) and therefore passivates them. Here, with the help of various spectroscopic techniques, such as X-ray photon-spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence quantum yield (PLQY) measurements, we demonstrate the capability of OPA to bind and passivate unpaired Pb2+ defect sites. Modification to crystallization promoting higher n-domain formation is also observed from steady-state and transient absorption (TA) measurements. With OPA treatment, both the PLQY and EQE of the corresponding PeLED showed improvements up to 53% and 3.7% at peak emission wavelength of 485 nm, respectively.

Gate-Defined Quantum Confinement in CVD 2D WS2.

Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS2 single- and bilayer devices before and after atomic layer deposition (ALD) of HfO2 . This isolates the influence of HfO2 deposition on low-temperature carrier transport and shows that carrier mobility is not charge impurity limited as commonly thought, but due to another important but commonly overlooked factor: interface roughness. This finding is corroborated by circular dichroic photoluminescence spectroscopy, X-ray photoemission spectroscopy, cross-sectional scanning transmission electron microscopy, carrier-transport modeling, and density functional modeling. Finally, electrostatic gate-defined quantum confinement is demonstrated using a scalable approach of large-area CVD-grown bilayer WS2 and ALD-grown HfO2 . The high dielectric constant and low leakage current enabled by HfO2 allows an estimated quantum dot size as small as 58 nm. The ability to lithographically define increasingly smaller devices is especially important for transition metal dichalcogenides due to their large effective masses, and should pave the way toward their use in quantum information processing applications.

Quantum Transport in Two-Dimensional WS2 with High-Efficiency Carrier Injection through Indium Alloy Contacts.

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ µm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts.

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric.

We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

Identifying Fundamental Limitations in Halide Perovskite Solar Cells.

The temperature dependence of the principal photovoltaic parameters of perovskite photovoltaics is studied. The recombination activation energy is in good agreement with the perovskite's bandgap energy, thereby placing an upper bound on the open-circuit voltage. The photocurrent increases moderately with temperature and remains high at low temperature, reinforcing that the cells are not hindered by insufficient thermally activated mobility or carrier trapping by deep defects.

Optimal Shell Thickness of Metal@Insulator Nanoparticles for Net Enhancement of Photogenerated Polarons in P3HT Films.

Embedding metal nanoparticles in the active layer of organic solar cells has been explored as a route for improving charge carrier generation, with localized field enhancement as a proposed mechanism. However, embedded metal nanoparticles can also act as charge recombination sites. To suppress such recombination, the metal nanoparticles are commonly coated with a thin insulating shell. At the same time, this insulating shell limits the extent that the localized enhanced electric field influences charge generation in the organic medium. It is presumed that there is an optimal thickness which maximizes field enhancement effects while suppressing recombination. Atomic Layer Deposition (ALD) was used to deposit Al2O3 layers of different thicknesses onto silver nanoparticles (Ag NPs), in a thin film of P3HT. Photoinduced absorption (PIA) spectroscopy was used to study the dependence of the photogenerated P3HT(+) polaron population on the Al2O3 thickness. The optimal thickness was found to be 3-5 nm. This knowledge can be further applied in the design of metal nanoparticle-enhanced solar cells.

Enhancing the performance of solution-processed bulk-heterojunction solar cells using hydrogen-bonding-induced self-organization of small molecules.

Small-molecule solar-cell performance is highly sensitive to the crystallinity and intermolecular connectivity of the molecules. In order to enhance the crystallinity for the solution-processed small molecule, it is possible to make use of carboxylic acid end-functional groups to drive hydrogen-bonding-induced π-π stacking of conjugated molecules. Herein, we report the synthesis and characterization of quarterthiophenes with carboxylic acid as end groups. The formation of hydrogen bonds between neighboring acid groups gives rise to a pseudo-polymeric structure in the molecules, which leads to substantial improvement in the organization and crystallinity of the active layers. This resulted in a four-fold increase in the hole mobility and a two-fold improvement in the performance of the solar cell device for the acid-functionalized molecule, compared to its ester analogue. More importantly, optimal device performance for the acid-functionalized molecule was achieved for the as-cast film, thereby reducing the reliance on thermal annealing and solvent additives.

Device physics and operation of lateral bulk heterojunction devices.

Measurements of lateral bulk heterojunction (BHJ) devices have recently been reported as a means to characterize charge transport and recombination properties within organic photovoltaic (OPV) materials. These structures allow for the direct measurement of the lateral extents of the space charge regions, potential and electric field profiles, current versus voltage characteristics, and other physical and chemical properties. This article describes numerical simulations that show three different transport regimes present within lateral BHJ devices and two different experimental methods, which verify those findings. These measurement techniques utilize typical confocal microscopy tools as well as steady-state current versus voltage measurements on high aspect ratio nanofabricated structures in order to probe the material properties between the electrodes. Experimental results show that the lateral extents of space charge regions within these devices are approximately 1-5 µm, which are related to the drift lengths of the charge carriers, and that the mechanism of bimolecular recombination is shown to be a bulk material property. The results within this article describe a series of methods to evaluate charge transport and recombination along the in-plane direction in BHJ films and provide complementary insights to those obtained from vertical-device-based measurements.

Scanning photocurrent microscopy of lateral organic bulk heterojunctions.

Scanning confocal photocurrent microscopy has been used to characterize carrier collection efficiency in lateral bulk heterojunction devices. By analyzing the photocurrent mappings within these devices, the lateral extents of the space charge regions has been measured and reported. Modulation via white light bias or increased voltage bias is also shown to increase the size of the space charge regions.

Poly(2,5-bis(2-octyldodecyl)-3,6-di(furan-2-yl)-2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione-co-thieno[3,2-b]thiophene): a high performance polymer semiconductor for both organic thin film transistors and organic photovoltaics.

A new diketopyrrolopyrrole (DPP)-containing donor-acceptor polymer, poly(2,5-bis(2-octyldodecyl)-3,6-di(furan-2-yl)-2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione-co-thieno[3,2-b]thiophene) (PDBF-co-TT), is synthesized and studied as a semiconductor in organic thin film transistors (OTFTs) and organic photovoltaics (OPVs). High hole mobility of up to 0.53 cm(2) V(-1) s(-1) in bottom-gate, top-contact OTFT devices is achieved owing to the ordered polymer chain packing and favoured chain orientation, strong intermolecular interactions, as well as uniform film morphology of PDBF-co-TT. The optimum band gap of 1.39 eV and high hole mobility make this polymer a promising donor semiconductor for the solar cell application. When paired with a fullerene acceptor, PC71BM, the resulting OPV devices show a high power conversion efficiency of up to 4.38% under simulated standard AM1.5 solar illumination.