Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures.

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.

Gate-tuneable and chirality-dependent charge-to-spin conversion in tellurium nanowires.

Chiral materials are an ideal playground for exploring the relation between symmetry, relativistic effects and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as tellurium have excellent electrical conductivity, but their potential for enabling the electrical control of spin polarization in devices remains unclear. Here, we demonstrate the all-electrical generation, manipulation and detection of spin polarization in chiral single-crystalline tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.

Electromagnetic Functionalization of Wide-Bandgap Dielectric Oxides by Boron Interstitial Doping.

A surge in interest of oxide-based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3 :LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin-polarized charge injection into the neighboring cations. This leads to a series of remarkable cation-dominated electrical switching and high-temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic-electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin-based applications.

Multiferroic properties of the PbTiO3/La2/3Sr1/3MnO3 interface studied from first principles.

Magnetoelectric coupling and spin polarization at the multiferroic PbTiO3/La2/3Sr1/3MnO3 (PTO/LSMO) interface is studied from first principles in view of the recent experimental observation of the tunneling magnetoresistance sign inversion in Co/PZT/LSMO tunnel junctions (Pantel et al 2012 Nat. Mater. 11 289). Our results confirm the stabilization of the locally antiferromagnetic order in the manganite when the PTO polarization points away from the LSMO side, which changes the interface magnetization by 6.3-6.9 [Formula: see text] per surface unit cell in agreement with previous studies. We contribute by analyzing the charge transfer from the half-metallic LSMO side which induces metallicity and local magnetic moments in the interface PTO layers. This results in either p- or n-doped conductive behavior, depending on the polarization direction. Electronic correlations were determined to qualitatively change the picture for certain configurations, as far as the magnetic phase transition in the manganite and the spin character of the interface states are concerned. Most importantly, depending on the interface termination, the spin polarization of the PTO/LSMO interface is positive for one polarization state of PTO and acquires a 'spin-valve' character upon the ferroelectric switching.

Reversible Formation of 2D Electron Gas at the LaFeO3 /SrTiO3 Interface via Control of Oxygen Vacancies.

A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.

Swift thermal steering of domain walls in ferromagnetic MnBi stripes.

We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.

Two-dimensional electron gas and its electric control at the interface between ferroelectric and antiferromagnetic insulator studied from first principles.

A multiferroic interface between the antiferromagnetic Slater insulator SrTcO3 and ferroelectric BaTiO3 (BTO) is studied from first principles. Although the interfacial magnetoelectric coupling of SrTcO3(001) is relatively small, we found that a two-dimensional electron gas (2DEG) appears for both BaO/TcO2 and TiO2/SrO terminations. The charge character of the carriers, induced in the band gap due to polar BTO, can be switched from electrons to holes by the reversal of the electric polarization in BTO. The 2DEG is robust and stable against the degree of electronic correlations, whereas the paraelectric state of BTO suppresses the 2DEG. The origin of the 2DEG at the BTO/SrTcO3 interface and its key factors are discussed.

Local measurement of the Eliashberg function of Pb islands: enhancement of electron-phonon coupling by quantum well states.

Inelastic tunneling spectroscopy of Pb islands on Cu(111) obtained by scanning tunneling microscopy below 1 K provides a direct access to the local Eliashberg function of the islands with high energy resolution. The Eliashberg function describes the electron-phonon interaction causing conventional superconductivity. The measured Eliashberg function strongly depends on the local thickness of the Pb nanostructures and shows a sharp maximum when quantum well states of the Pb islands come close to the Fermi energy. Ab initio calculations reveal that this is related to enhanced electron-phonon coupling at these thicknesses.

Stabilizing the magnetic moment of single holmium atoms by symmetry.

Single magnetic atoms, and assemblies of such atoms, on non-magnetic surfaces have recently attracted attention owing to their potential use in high-density magnetic data storage and as a platform for quantum computing. A fundamental problem resulting from their quantum mechanical nature is that the localized magnetic moments of these atoms are easily destabilized by interactions with electrons, nuclear spins and lattice vibrations of the substrate. Even when large magnetic fields are applied to stabilize the magnetic moment, the observed lifetimes remain rather short (less than a microsecond). Several routes for stabilizing the magnetic moment against fluctuations have been suggested, such as using thin insulating layers between the magnetic atom and the substrate to suppress the interactions with the substrate's conduction electrons, or coupling several magnetic moments together to reduce their quantum mechanical fluctuations. Here we show that the magnetic moments of single holmium atoms on a highly conductive metallic substrate can reach lifetimes of the order of minutes. The necessary decoupling from the thermal bath of electrons, nuclear spins and lattice vibrations is achieved by a remarkable combination of several symmetries intrinsic to the system: time reversal symmetry, the internal symmetries of the total angular momentum and the point symmetry of the local environment of the magnetic atom.

Impact of electron-impurity scattering on the spin relaxation time in graphene: a first-principles study.

The effect of electron-impurity scattering on momentum and spin relaxation times in graphene is studied by means of relativistic ab initio calculations. Assuming carbon and silicon adatoms as natural impurities in graphene, we are able to simulate fast spin relaxation observed experimentally. We investigate the dependence of the relaxation times on the impurity position and demonstrate that C or Si adatoms act as real-space spin hot spots inducing spin-flip rates about 5 orders of magnitude larger than those of in-plane impurities. This fact confirms the hypothesis that the adatom-induced spin-orbit coupling leads to fast spin relaxation in graphene.

Magnetic excitations of rare earth atoms and clusters on metallic surfaces.

Magnetic anisotropy and magnetization dynamics of rare earth Gd atoms and dimers on Pt(111) and Cu(111) were investigated with inelastic tunneling spectroscopy. The spin excitation spectra reveal that giant magnetic anisotropies and lifetimes of the excited states of Gd are nearly independent of the supporting surfaces and the cluster size. In combination with theoretical calculations, we argue that the observed features are caused by strongly localized character of 4f electrons in Gd atoms and clusters.