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1.
Opt Express ; 24(6): 6265-70, 2016 Mar 21.
Artigo em Inglês | MEDLINE | ID: mdl-27136819

RESUMO

We propose a procedure for characterizing fabrication deviations within a chip and among different chips in a wafer in silicon photonics technology. In particular, independent measurements of SOI thickness and waveguide width deviations can be mapped through the wafer, allowing a precise and non-destructive characterization of how these variations are distributed along the surface of the wafer. These deviations are critical for most wavelength-dependent integrated devices, like microring resonators, filters, etc. We also show that the technique allows for the characterization of proximity effects.

2.
Opt Lett ; 38(20): 4162-5, 2013 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-24321949

RESUMO

We experimentally demonstrate the use of cyclic pulse coding for distributed strain and temperature measurements in hybrid Raman/Brillouin optical time-domain analysis (BOTDA) optical fiber sensors. The highly integrated proposed solution effectively addresses the strain/temperature cross-sensitivity issue affecting standard BOTDA sensors, allowing for simultaneous meter-scale strain and temperature measurements over 10 km of standard single mode fiber using a single narrowband laser source only.

3.
Opt Lett ; 38(15): 2877-80, 2013 Aug 01.
Artigo em Inglês | MEDLINE | ID: mdl-23903168

RESUMO

A cyclic pulse coding technique is proposed and experimentally demonstrated for fast implementation of long-range Brillouin optical time-domain analysis (BOTDA). The proposed technique allows for accurate temperature and strain measurements with meter-scale spatial resolution over kilometers of standard single-mode fiber, with subsecond measurement times.

4.
Opt Express ; 21(4): 3932-40, 2013 Feb 25.
Artigo em Inglês | MEDLINE | ID: mdl-23481928

RESUMO

The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient γ is measured by four-wave-mixing and the imaginary part of γ is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient γ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples.


Assuntos
Modelos Teóricos , Dinâmica não Linear , Refratometria/instrumentação , Silício/química , Ressonância de Plasmônio de Superfície/instrumentação , Simulação por Computador , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de Equipamento
5.
Opt Express ; 20(21): 23838-45, 2012 Oct 08.
Artigo em Inglês | MEDLINE | ID: mdl-23188349

RESUMO

We present the characterization of the ultrafast nonlinear dynamics of a CMOS-compatible horizontal-slot waveguide with silicon nanocrystals. Results are compared to strip silicon waveguides, and modeled with nonlinear split-step calculations. The extracted parameters show that the slot waveguide has weaker carrier effects and better nonlinear figure-of-merit than the strip waveguides.


Assuntos
Modelos Teóricos , Nanoestruturas/química , Nanotecnologia/instrumentação , Dinâmica não Linear , Silício/química , Ressonância de Plasmônio de Superfície/instrumentação , Simulação por Computador , Cristalização/métodos , Desenho de Equipamento , Análise de Falha de Equipamento , Nanoestruturas/ultraestrutura
6.
Opt Express ; 19(25): 24980-5, 2011 Dec 05.
Artigo em Inglês | MEDLINE | ID: mdl-22273891

RESUMO

We present an experimental technique to characterize backscattering in silicon microring resonators, together with a simple analytical model that reproduces the experimental results. The model can extract all the key parameters of an add-drop-type resonator, which are the loss, both coupling coefficients and backscattering. We show that the backscattering effect strongly affects the resonance shape, and that consecutive resonances of the same ring can have very different backscattering parameters.


Assuntos
Desenho Assistido por Computador , Lentes , Modelos Teóricos , Dispositivos Ópticos , Silício/química , Transdutores , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Luz , Espalhamento de Radiação
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