Quantum Dot Patterning and Encapsulation by Maskless Lithography for Display Technologies.

For their unique optical properties, quantum dots (QDs) have been extensively used as light emitters in a number of photonic and optoelectronic applications. They even met commercialization success through their implementation in high-end displays with unmatched brightness and color rendering. For such applications, however, QDs must be shielded from oxygen and water vapor, which are known to degrade their optical properties over time. Even with highly qualitative QDs, this can only be achieved through their encapsulation between barrier layers. With the emergence of mini- and microLED for higher contrast and miniaturized displays, new strategies must be found for the concomitant patterning and encapsulation of QDs, with sub-millimeter resolution. To this end, we developed a new approach for the direct patterning of QDs through maskless lithography. By combining QDs in photopolymerizable resins with digital light processing (DLP) projectors, we developed a versatile and massively parallel fabrication process for the additive manufacturing of functional structures that we refer to as QD pockets. These 3D heterostructures are designed to provide isotropic encapsulation of the QDs, and hence prevent edge ingress from the lateral sides of QD films, which remains a shortcoming of the current technologies.

Molecular engineering of organic semiconductors enables noble metal-comparable SERS enhancement and sensitivity.

Nanostructured molecular semiconductor films are promising Surface-Enhanced Raman Spectroscopy (SERS) platforms for both fundamental and technological research. Here, we report that a nanostructured film of the small molecule DFP-4T, consisting of a fully π-conjugated diperfluorophenyl-substituted quaterthiophene structure, demonstrates a very large Raman enhancement factor (>105) and a low limit of detection (10-9 M) for the methylene blue probe molecule. This data is comparable to those reported for the best inorganic semiconductor- and even intrinsic plasmonic metal-based SERS platforms. Photoluminescence spectroscopy and computational analysis suggest that both charge-transfer energy and effective molecular interactions, leading to a small but non-zero oscillator strength in the charge-transfer state between the organic semiconductor film and the analyte molecule, are required to achieve large SERS enhancement factors and high molecular sensitivities in these systems. Our results provide not only a considerable experimental advancement in organic SERS figure-of-merits but also a guidance for the molecular design of more sensitive SERS systems.

Highly Efficient Deep-Blue Electroluminescence Based on a Solution-Processable A-π-D-π-A Oligo(p-phenyleneethynylene) Small Molecule.

The development of solution-processable fluorescent small molecules with highly efficient deep-blue electroluminescence is of growing interest for organic light-emitting diode (OLED) applications. However, high-performance deep-blue fluorescent emitters with external quantum efficiencies (EQEs) over 5% are still scarce in OLEDs. Herein, a novel highly soluble oligo(p-phenyleneethynylene)-based small molecule, 1,4-bis((2-cyanophenyl)ethynyl)-2,5-bis(2-ethylhexyloxy)benzene (2EHO-CNPE), is designed, synthesized, and fully characterized as a wide band gap (2.98 eV) and highly fluorescent (ΦPL = 0.90 (solution) and 0.51 (solid-state)) deep-blue emitter. The new molecule is functionalized with cyano (-CN)/2-ethylhexyloxy (-OCH2CH(C2H5)C4H9) electron-withdrawing/-donating substituents, and ethynylene is used as a π-spacer to form an acceptor (A)-π-donor (D)-π-acceptor (A) molecular architecture with hybridized local and charge transfer (HLCT) excited states. Physicochemical and optoelectronic characterizations of the new emitter were performed in detail, and the single-crystal structure was determined. The new molecule adopts a nearly coplanar π-conjugated framework packed via intermolecular "C-H···π" and "C-H···N" hydrogen bonding interactions without any π-π stacking. The OLED device based on 2EHO-CNPE shows an EQEmax of 7.06% (EQE = 6.30% at 200 cd/m2) and a maximum current efficiency (CEmax) of 5.91 cd/A (CE = 5.34 cd/A at 200 cd/m2) with a deep-blue emission at CIE of (0.15, 0.09). The electroluminescence performances achieved here are among the highest reported to date for a solution-processed deep-blue fluorescent small molecule, and, to the best of our knowledge, it is the first time that a deep-blue OLED is reported based on the oligo(p-phenyleneethynylene) π-framework. TDDFT calculations point to facile reverse intersystem crossing (RISC) processes in 2EHO-CNPE from high-lying triplet states to the first singlet excited state (T2/T3 → S1) (hot-exciton channels) that enable a high radiative exciton yield (ηr ∼ 69%) breaking the theoretical limit of 25% in conventional fluorescent OLEDs. These results demonstrate that properly designed fluorescent oligo(p-phenyleneethynylenes) can be a key player in high-performance deep-blue OLEDs.

A Solution-Processable meso-Phenyl-BODIPY-Based n-Channel Semiconductor with Enhanced Fluorescence Emission.

The molecular design, synthesis, and characterization of an acceptor-donor-acceptor (A-D-A) semiconductor BDY-Ph-2T-Ph-BDY comprising a central phenyl-bithiophene-phenyl π-donor and BODIPY π-acceptor end-units is reported. The semiconductor shows an optical band gap of 2.32 eV with a highly stabilized HOMO/LUMO (-5.74 eV/-3.42 eV). Single-crystal X-ray diffraction (XRD) reveals D-A dihedral angle of ca. 66° and strong intermolecular "C-H ⋅⋅⋅ π (3.31 Å)" interactions. Reduced π-donor strength, increased D-A dihedral angle, and restricted intramolecular D-A rotations allows for both good fluorescence efficiency (ΦF =0.30) and n-channel OFET transport (µe =0.005 cm2 /V ⋅ s; Ion /Ioff =104 -105 ). This indicates a much improved (6-fold) fluorescence quantum yield compared to the meso-thienyl BODIPY semiconductor BDY-4T-BDY. Photophysical studies reveal important transitions between locally excited (LE) and twisted intramolecular charge-transfer (TICT) states in solution and the solid state, which could be controlled by solvent polarity and nano-aggregation. This is the first report of such high emissive characteristics for a BODIPY-based n-channel semiconductor.

BODIPY-Based Semiconducting Materials for Organic Bulk Heterojunction Photovoltaics and Thin-Film Transistors.

The rapid emergence of organic (opto)electronics as a promising alternative to conventional (opto)electronics has been achieved through the design and development of novel π-conjugated systems. Among various semiconducting structural platforms, 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) π-systems have recently attracted attention for use in organic thin-films transistors (OTFTs) and organic photovoltaics (OPVs). This Review article provides an overview of the developments in the past 10 years on the structural design and synthesis of BODIPY-based organic semiconductors and their application in OTFT/OPV devices. The findings summarized and discussed here include the most recent breakthroughs in BODIPYs with record-high charge carrier mobilities and power conversion efficiencies (PCEs). The most up-to-date design rationales and discussions providing a strong understanding of structure-property-function relationships in BODIPY-based semiconductors are presented. Thus, this review is expected to inspire new research for future materials developments/applications in this family of molecules.

A Solution-Processable Liquid-Crystalline Semiconductor for Low-Temperature-Annealed Air-Stable N-Channel Field-Effect Transistors.

A new solution-processable and air-stable liquid-crystalline n-channel organic semiconductor (2,2'-(2,8-bis(5-(2-octyldodecyl)thiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile, α,ω-2OD-TIFDMT) with donor-acceptor-donor (D-A-D) π conjugation has been designed, synthesized, and fully characterized. The new semiconductor exhibits a low LUMO energy (-4.19 eV) and a narrow optical bandgap (1.35 eV). The typical pseudo-focal-conic fan-shaped texture of a hexagonal columnar liquid-crystalline (LC) phase was observed over a wide temperature range. The spin-coated semiconductor thin films show the formation of large (≈0.5-1 µm) and highly crystalline platelike grains with edge-on molecular orientations. Low-temperature-annealed (50 °C) top-contact/bottom-gate OFETs have provided good electron mobility values as high as 0.11 cm2 (V s)-1 and high Ion /Ioff ratios of 107 to 108 with excellent ambient stability. This indicates an enhancement of two orders of magnitude (100×) when compared with the ß-substituted parent semiconductor, ß-DD-TIFDMT (2,2'-(2,8-bis(3-dodecylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile). The current rational alkyl-chain engineering route offers great advantages for D-A-D π-core coplanarity in addition to maintaining good solubility in organic solvents, and leads to favorable optoelectronic/physicochemical characteristics. These remarkable findings demonstrate that α,ω-2OD-TIFDMT is a promising semiconductor material for the development of n-channel OFETs on flexible plastic substrates and LC-state annealing of the columnar liquid crystals can lower the electron mobility for transistor-type charge transport.