Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device.

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3 bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing agatethat works on voltage controlled magnetic anisotropy. Here, the inhomogeneous magnetic anisotropy behaves as a tunable potential barrier/well that modulates the skyrmion trajectory in the structure for the successful implementation of the majority logic gate. In addition, several other effects such as skyrmion-skyrmion topological repulsion, skyrmion-edge repulsion, spin-orbit torque and skyrmion Hall effect have been shown to govern the logic functionalities. We have systematically presented the robust logic operations by varying the current density, magnetic anisotropy, voltage-controlled gate dimension and geometrical parameters of the logic device. The skyrmion Hall angle is monitored to understand the trajectory and stability of the skyrmion as a function of time in the logic device. The results demonstrate a novel method to achieve majority logic by using voltage controlled magnetic anisotropy which further opens up a new route for skyrmion-based low-power and high-speed computing devices.

Skyrmion based 3D low complex runtime reconfigurable architecture design methodology of universal logic gate.

In this study, we introduce the area efficient low complex runtime reconfigurable architecture design methodology based on Skyrmion logic for universal logic gate (ULG) i.e. NOR/NAND implementation using micromagnetic simulations. We have modelled the two input 3D device structure using bilayer ferromagnet/heavy metal where the magnetic tunnel junctions inject and detect the input and output skyrmions by exploiting the input reversal mechanism. The implementation of NOR and NAND is performed using this same device where it is reconfigured runtime with enhanced tunability by the ON and OFF state of current passing through a non magnetic metallic gate respectively. This gate acts as a barrier for skyrmion motion (additional control mechanism) to realize the required Skyrmion logic output states. To the best of authors's knowledge the boolean optimizations and the mapping logic have been presented for the first time to demonstrate the functionalities of the NOR/NAND implementation. This proposed architecture design methodology of ULG leads to reduced device footprint with regard to the number of thin film structures proposed, low complexity in terms of fabrication and also providing runtime reconfigurability to reduce the number of physical designs to achieve all truth table entries (∼75% device footprint reduction). The proposed 3D ULG architecture design benefits from the miniaturization resulting in opening up a new perspective for magneto-logic devices.

Effect of seed layer thickness on the Ta crystalline phase and spin Hall angle.

Heavy metal-ferromagnet bilayer structures have attracted great research interest for charge-to-spin interconversion. In this work, we investigated the effect of the permalloy (Py) seed layer on the tantalum (Ta) polycrystalline phase and its spin Hall angle. Interestingly, for the same deposition rates the crystalline phase of Ta deposited on the Py seed layer strongly depends on the thickness of the seed layer. We observed a phase transition from α-Ta to (α + ß)-Ta while increasing the Py seed layer thickness. The observed phase transition is attributed to the strain at the interface between the Py and Ta layers. Ferromagnetic resonance-based spin pumping studies reveal that the spin-mixing conductance in the (α + ß)-Ta is relatively higher as compared to the α-Ta. Spin Hall angles of α-Ta and (α + ß)-Ta are obtained from the inverse spin Hall effect (ISHE) measurements. The spin Hall angle of (α + ß)-Ta is estimated to be θSH = -0.15 ± 0.009 which is relatively higher than that of the α-Ta. Our systematic results connecting the phase of Ta with the seed layer and its effect on the efficiency of spin to charge conversion might resolve ambiguities across various literature and open up new functionalities based on the growth process for emerging spintronic devices.

Giant spin pumping at the ferromagnet (permalloy) - organic semiconductor (perylene diimide) interface.

Pure spin current based devices have attracted great interest in recent days. Spin current injection into non-magnetic materials is essential for the design and development of such pure spin current based devices. In this context, organic semiconductors (OSCs) can be potential non-magnetic materials over widely explored heavy metals. This is due to the relatively low spin-orbit coupling of OSCs, which is essential to host the spin current with a large spin diffusion length and long spin-relaxation time. This research work demonstrates the harvesting of spin currents at the perylene diimide (PDI)/permalloy (Py) based OSC interface. The observed high linewidth broadening of 2.18 mT from the ferromagnetic resonance spectra indicates the presence of giant spin pumping from Py to PDI. The resultant spin-mixing conductance, 1.54 × 1018 m-2 quantifies the amount of spin current injected from Py to PDI, which is in a similar range to ferromagnet/heavy metals.