Atomic and Molecular Layer Deposition of Chiral Thin Films Showing up to 99% Spin Selective Transport.

Spin electronics is delivering a much desired combination of properties such as high speed, low power, and high device densities for the next generation of memory devices. Utilizing chiral-induced spin selectivity (CISS) effect is a promising path toward efficient and simple spintronic devices. To be compatible with state-of-the-art integrated circuits manufacturing methodologies, vapor phase methodologies for deposition of spin filtering layers are needed. Here, we present vapor phase deposition of hybrid organic-inorganic thin films with embedded chirality. The deposition scheme relies on a combination of atomic and molecular layer deposition (A/MLD) utilizing enantiomeric pure alaninol molecular precursors combined with trimethyl aluminum (TMA) and water. The A/MLD deposition method deliver highly conformal thin films allowing the fabrication of several types of nanometric scale spintronic devices. The devices showed high spin polarization (close to 100%) for 5 nm thick spin filter layer deposited by A/MLD. The procedure is compatible with common device processing methodologies.

Long-Time-Scale Magnetization Ordering Induced by an Adsorbed Chiral Monolayer on Ferromagnets.

When an electron passes through a chiral molecule, there is a high probability for correlation between the momentum and spin of the charge, thus leading to a spin polarized current. This phenomenon is known as the chiral-induced spin selectivity (CISS) effect. One of the most surprising experimental results recently demonstrated is that magnetization reversal in a ferromagnet with perpendicular anisotropy can be realized solely by chemisorbing a chiral molecular monolayer without applying any current or external magnetic field. This result raises the currently open question of whether this effect is due to the bonding event, held by the ferromagnet, or a long-time-scale effect stabilized by exchange interactions. In this work we have performed vectorial magnetic field measurements of the magnetization reorientation of a ferromagnetic layer exhibiting perpendicular anisotropy due to CISS using nitrogen-vacancy centers in diamond and followed the time dynamics of this effect. In parallel, we have measured the molecular monolayer tilt angle in order to find a correlation between the time dependence of the magnetization reorientation and the change of the tilt angle of the molecular monolayer. We have identified that changes in the magnetization direction correspond to changes of the molecular monolayer tilt angle, providing evidence for a long-time-scale characteristic of the induced magnetization reorientation. This suggests that the CISS effect has an effect over long time scales which we attribute to exchange interactions. These results offer significant insights into the fundamental processes underlying the CISS effect, contributing to the implementation of CISS in state-of-the-art applications such as spintronic and magnetic memory devices.

Optical Multilevel Spin Bit Device Using Chiral Quantum Dots.

The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

Chiral Molecules and the Spin Selectivity Effect.

This Perspective discusses recent experiments that bear on the chiral induced spin selectivity (CISS) mechanism and its manifestation in electronic and magnetic properties of chiral molecules and materials. Although the discussion emphasizes newer experiments, such as the magnetization dependence of chiral molecule interactions with ferromagnetic surfaces, early experiments, which reveal the nonlinear scaling of the spin filtering with applied potential, are described also. In many of the theoretical studies, one has had to invoke unusually large spin-orbit couplings in order to reproduce the large spin filtering observed in experiments. Experiments imply that exchange interactions and Pauli exclusion constraints are an important aspect of CISS. They also demonstrate the spin-dependent charge flow between a ferromagnetic substrate and chiral molecules. With these insights in mind, a simplified model is described in which the chiral molecule's spin polarization is enhanced by a spin blockade effect to generate large spin filtering.

Controlling avalanche criticality in 2D nano arrays.

Many physical systems respond to slowly changing external force through avalanches spanning broad range of sizes. Some systems crackle even without apparent external force, such as bursts of neuronal activity or charge transfer avalanches in 2D molecular layers. Advanced development of theoretical models describing disorder-induced critical phenomena calls for experiments probing the dynamics upon tuneable disorder. Here we show that isomeric structural transitions in 2D organic self-assembled monolayer (SAM) exhibit critical dynamics with experimentally tuneable disorder. The system consists of field effect transistor coupled through SAM to illuminated semiconducting nanocrystals (NCs). Charges photoinduced in NCs are transferred through SAM to the transistor surface and modulate its conductivity. Avalanches of isomeric structural transitions are revealed by measuring the current noise I(t) of the transistor. Accumulated surface traps charges reduce dipole moments of the molecules, decrease their coupling, and thus decrease the critical disorder of the SAM enabling its tuning during experiments.

Collective effects in charge transfer within a hybrid organic-inorganic system.

A collective electron transfer (ET) process was discovered by studying the current noise in a field effect transistor with light-sensitive gate formed by nanocrystals linked by organic molecules to its surface. Fluctuations in the ET through the organic linker are reflected in the fluctuations of the transistor conductivity. The current noise has an avalanche character. Critical exponents obtained from the noise power spectra, avalanche distributions, and the dependence of the average avalanche size on avalanche duration are consistent with each other. A plausible model is proposed for this phenomenon.

Distribution of tunnel splittings in Mn(12) acetate.

In magnetic fields applied parallel to the anisotropy axis, the relaxation of the magnetization of Mn(12)-acetate measured for different sweep rates collapses onto a single scaled curve. The form of the scaling implies that the dominant symmetry-breaking process responsible for tunneling is a locally varying second-order transverse anisotropy, forbidden by tetragonal symmetry in the perfect crystal, which gives rise to a broad distribution of tunnel splittings in a real crystal of Mn(12) acetate. Different forms applied to even- and odd-numbered steps provide a clear distinction between even resonances (associated with crystal anisotropy) and odd resonances (which require a transverse magnetic field).

Instabilities and disorder-driven first-order transition of the vortex lattice

Transport studies in a Corbino disk suggest that the Bragg glass phase undergoes a first-order transition into a disordered solid. This transition shows sharp reentrant behavior at low fields. In contrast, in the conventional strip configuration, the phase transition is obscured by the injection of the disordered vortices through the sample edges, which results in the commonly observed vortex instabilities and smearing of the peak effect in NbSe2 crystals. These features are found to be absent in the Corbino geometry in which the circulating vortices do not cross the sample edges.

Dynamic instabilities and memory effects in vortex matter

The magnetic flux line lattice in type II superconductors serves as a useful system in which to study condensed matter flow, as its dynamic properties are tunable. Recent studies have shown a number of puzzling phenomena associated with vortex motion, including: low-frequency noise and slow voltage oscillations; a history-dependent dynamic response, and memory of the direction, amplitude duration and frequency of the previously applied current; high vortex mobility for alternating current, but no apparent vortex motion for direct currents; and strong suppression of an a.c. response by small d.c. bias. Taken together, these phenomena are incompatible with current understanding of vortex dynamics. Here we report a generic mechanism that accounts for these observations. Our model, which is derived from investigations of the current distribution across single crystals of NbSe2, is based on a competition between the injection of a disordered vortex phase at the sample edges, and the dynamic annealing of this metastable disorder by the transport current. For an alternating current, only narrow regions near the edges are in the disordered phase, while for d.c. bias, most of the sample is in the disordered phase--preventing vortex motion because of more efficient pinning. The resulting spatial dependence of the disordered vortex system serves as an active memory of the previous history.