Microscopy aided detection of the self-intercalation mechanism and in situ electronic properties in chromium selenide.

Two-dimensional (2D) chromium-based self-intercalated materials Cr1+nX2 (0 ≤ n ≤ 1, X = S, Se, Te) have attracted much attention because of their tunable magnetism with good environmental stability. Intriguingly, the magnetic and electrical properties of the materials can be effectively tuned by altering the coverage and spatial arrangement of the intercalated Cr (ic-Cr) within the van der Waals gap, contributing to different stoichiometries. Several different Cr1+nX2 systems have been widely investigated recently; however, those with the same stoichiometric ratio (such as Cr1.25Te2) were reported to exhibit disparate magnetic properties, which still lacks explanation. Therefore, a systematic in situ study of the mechanisms with microscopy techniques is in high demand to look into the origin of these discrepancies. Herein, 2D self-intercalated Cr1+nSe2 nanoflakes were synthesized as a platform to conduct the characterization. Combining scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM), we studied in depth the microscopic structure and local electronic properties of the Cr1+nSe2 nanoflakes. The self-intercalation mechanism of ic-Cr and local stoichiometric-ratio variation in a Cr1+nSe2 ultrathin nanoflake is clearly detected at the nanometer scale. Scanning tunneling spectroscopy (STS) measurements indicate that Cr1.5Se2/Cr2Se2 and Cr1.25Se2 exhibit conductive and semiconductive behaviors, respectively. The STM tip manipulation method is further applied to manipulate the microstructure of Cr1+nSe2, which successfully produces clean zigzag-type boundaries. Our systematic microscopy study paves the way for the in-depth study of the magnetic mechanism of 2D self-intercalated magnets at the nano/micro scale and the development of new magnetic and spintronic devices.

Space-Confined Growth of Ultrathin P-Type GeTe Nanosheets for Broadband Photodetectors.

As p-type phase-change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two-dimensional (2D) p-type GeTe nanosheets are synthesized via a specially designed space-confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space-confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p-type semiconductor properties, such as a satisfactory on/off ratio of 105 . Temperature-dependent electrical measurements demonstrate that variable-range hopping and optical-phonon-assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W-1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near-infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p-type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.

Correlation-Induced Symmetry-Broken States in Large-Angle Twisted Bilayer Graphene on MoS2.

Strongly correlated states commonly emerge in twisted bilayer graphene (TBG) with "magic-angle" (1.1°), where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this nonmagic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the width of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked by the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result demonstrates the feasibility of the study and application of the correlation physics in TBGs with a wider range of twist angle.

Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits.

Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.

Interlayer Coupling in Anisotropic/Isotropic Van der Waals Heterostructures of ReS2 and WS2.

Van der Waals (vdW) heterostructures are composed of atomically thin layers assembled through weak (vdW) force, which have opened a new era for integrating materials with distinct properties and specific applications. However, few studies have focused on whether and how anisotropic materials affect heterostructure system. The study introduces anisotropic and isotropic materials in a heterojunction system to change the in-plane symmetry, offering a new degree of freedom for modulating its properties. The sample is fabricated by manually stacking ReS2 and WS2 flakes prepared by mechanical exfoliation. Raman spectra and photoluminescence measurements confirm the formation of an effective heterojunction, indicating interlayer coupling of the system. The anisotropy and asymmetry of the WS2 -ReS2 heterostructure system can be adjusted by the introduction of isotropic WS2 and anisotropic ReS2 , which can be proved by the change of the polarized Raman pattern. In the transient absorption measurement, the transient absorption spectra of WS2 -ReS2 heterostructure are red-shifted compared to those of WS2 monolayer, and the charge transfer is observed in the heterostructure. These results show the potential of anisotropic 2D materials in anisotropy modulation of heterostructures, which may promote future electronic or photonic application.

A Biomimetic Nociceptor Using Centrosymmetric Crystals for Machine Intelligence.

Pain sensation is a crucial aspect of perception in the body. Force-activated nociceptors encode electrochemical signals and yield multilevel information of pain, thus enabling smart feedback. Inspired by the natural template, multi-dimensional mechano-sensing materials provide promising approaches for biomimetic nociceptors in intelligent terminals. However, the reliance on non-centrosymmetric crystals has narrowed the range of these materials. Here centrosymmetric crystal Cr3+ -doped zinc gallogermanate (ZGGO:Cr) with multi-dimensional mechano-sensing is reported, eliminating the limitation of crystal structure. Under forces, ZGGO:Cr generates electrical signals imitating those of neuronal systems, and produces luminescence for spatial mapping of mechanical stimuli, suggesting a path toward bionic pain perception. On that basis, a wireless biomimetic nociceptor system is developed and a smart pain reflex in a robotic hand and robot-assisted biopsy surgery of rat and dog is achieved.

Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity.

2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.

Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system.

The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.

Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response.

Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials; however, this approach still remains to be explored in 2D materials. Here, we systematically demonstrate the growth of vanadium-doped molybdenum disulfide (V-doped MoS2) monolayers via an alkali metal-assisted chemical vapor deposition method. Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS2 monolayers. This was also confirmed by Raman and X-ray photoelectron spectroscopy. Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS2 monolayers (with low doping concentration). Most importantly, through temperature-dependent study, we observed efficient valley scattering of the B-exciton, greatly enhancing its emission intensity. Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS2, where a clear n-type behavior transited first to ambipolar and then to lightly p-type charge carrier transport. In addition, visible to infrared wide-band photodetectors based on V-doped MoS2 monolayers (with low doping concentration) were demonstrated. The V-doped MoS2 monolayers with distinct B-exciton emission, enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and offer novel materials for optoelectronic applications.

Sulfur-Stabilizing Ultrafine High-Entropy Alloy Nanoparticles on MXene for Highly Efficient Ethanol Electrooxidation.

High-entropy alloys (HEAs) are significantly promising candidates for heterogeneous catalysis, yet the controllable synthesis of ultrafine HEA nanoparticles (NPs) remains a formidable challenge due to severe thermal sintering during the high-temperature fabrication process. Herein, we report a sulfur-stabilizing strategy to construct ultrafine HEA NPs with an average diameter of 4.02 nm supported on sulfur-modified Ti3C2Tx (S-Ti3C2Tx) MXene, on which the strong interfacial metal-sulfur interactions between HEA NPs and the S-Ti3C2Tx supports significantly increase the interfacial adhesion strength, thus greatly suppressing nanoparticle sintering by retarding both particle migration and metal atom diffusion. The representative quinary PtPdCuNiCo HEA-S-Ti3C2Tx exhibits excellent catalytic performance toward alkaline ethanol oxidation reaction (EOR) with an ultrahigh mass activity of 7.03 A mgPt+Pd-1, which is 4.34 and 5.17 times higher than those of the commercial Pt/C and Pd/C catalysts, respectively. In situ attenuated total reflection-infrared spectroscopy studies reveal that the high intrinsic catalytic activity for the EOR can be ascribed to the synergy of different catalytically active sites of HEA NPs and the well-designed interfacial metal-sulfur interactions.

Oxygen Defect Engineering Promotes Synergy Between Adsorbate Evolution and Single Lattice Oxygen Mechanisms of OER in Transition Metal-Based (oxy)Hydroxide.

The oxygen evolution reaction (OER) activity of transition metal (TM)-based (oxy)hydroxide is dominated by the number and nature of surface active sites, which are generally considered to be TM atoms occupying less than half of surface sites, with most being inactive oxygen atoms. Herein, based on an in situ competing growth strategy of bimetallic ions and OH- ions, a facile one-step method is proposed to modulate oxygen defects in NiFe-layered double hydroxide (NiFe-LDH)/FeOOH heterostructure, which may trigger the single lattice oxygen mechanism (sLOM). Interestingly, by only varying the addition of H2 O2 , one can simultaneously regulate the concentration of oxygen defects, the valence of metal sites, and the ratio of components. The proper oxygen defects promote synergy between the adsorbate evolution mechanism (AEM, metal redox chemistry) and sLOM (oxygen redox chemistry) of OER in NiFe-based (oxy)hydroxide, practically maximizing the use of surface TM and oxygen atoms as active sites. Consequently, the optimal NiFe-LDH/FeOOH heterostructure outperforms the reported non-noble OER catalysts in electrocatalytic activity, with an overpotential of 177 mV to deliver a current density of 20 mA cm-2 and high stability. The novel strategy exemplifies a facile and versatile approach to designing highly active TM-LDH-based OER electrocatalysts for energy and environmental applications.

Artificial Visual Synaptic Architecture with High-Linearity Light-Modulated Weight for Optoelectronic Neuromorphic Computing.

A brain-like neuromorphic computing system, as compared with traditional Von Neumann architecture, has broad application prospects in the fields of emerging artificial intelligence (AI) due to its high fault tolerance, excellent plasticity, and parallel computing capability. A neuromorphic visuosensory and memory system, an important branch of neuromorphic computing, is the basis for AI to perceive, process, and memorize optical information, now still suffering from nonlinearity of synaptic weight, crosstalk issues, and integration incompatibility, hindering the high-level training and inference accuracy. In this work, we propose a new optoelectronic neuromorphic architecture by integrating an electrochromic device and a perovskite photodetector. Ascribing to the superior memory characteristics of the electrochromic device and sensitive light response of the perovskite photodetector, the neuromorphic device shows typical visual synaptic functionalities such as light triggering, neural facilitation, long-term potentiation, and depression (LTP and LTD). Furthermore, by adjusting the intensity and wavelength of external light signals, the visual synaptic function of the device can be modulated, enabling the device to exhibit high weight linearity in all current output ranges and improve information processing capability and image recognition accuracy. Moreover, both the electrochromic and perovskite layers possess the advantage of large area fabrication and integration, which enables the fabrication of large device arrays with high integration compatibility and scalability. In this study, 10 × 10 device arrays are demonstrated and each device shows uniform light responses, memory behaviors, and synaptic performances. MNIST and CIFAR-10 algorithms are used to simulate the image recognition properties of the synaptic architecture, and the calculated recognition accuracy is 97.94 and 91.04%, respectively, with an error less than 2.5%. The proposed artificial visual neuromorphic architecture will provide a potential device prototype for efficient visual neuromorphic systems.

Electrically Controlling Vortices in a Neutral Exciton-Polariton Condensate at Room Temperature.

Manipulating bosonic condensates with electric fields is very challenging as the electric fields do not directly interact with the neutral particles of the condensate. Here we demonstrate a simple electric method to tune the vorticity of exciton-polariton condensates in a strong coupling liquid crystal (LC) microcavity with CsPbBr_{3} microplates as active material at room temperature. In such a microcavity, the LC molecular director can be electrically modulated giving control over the polariton condensation in different modes. For isotropic nonresonant optical pumping we demonstrate the spontaneous formation of vortices with topological charges of +1, +2, -2, and -1. The topological vortex charge is controlled by a voltage in the range of 1 to 10 V applied to the microcavity sample. This control is achieved by the interplay of a built-in potential gradient, the anisotropy of the optically active perovskite microplates, and the electrically controllable LC molecular director in our system with intentionally broken rotational symmetry. Besides the fundamental interest in the achieved electric polariton vortex control at room temperature, our work paves the way to micron-sized emitters with electric control over the emitted light's phase profile and quantized orbital angular momentum for information processing and integration into photonic circuits.

Strong Dipolar Repulsion of One-Dimensional Interfacial Excitons in Monolayer Lateral Heterojunctions.

Repulsive and long-range exciton-exciton interactions are crucial for the exploration of one-dimensional (1D) correlated quantum phases in the solid state. However, the experimental realization of nanoscale confinement of a 1D dipolar exciton has thus far been limited. Here, we demonstrate atomically precise lateral heterojunctions based at transitional-metal dichalcogenides (TMDCs) as a platform for 1D dipolar excitons. The dynamics and transport of the interfacial charge transfer excitons in a type II WSe2-WS1.16Se0.84 lateral heterostructure were spatially and temporally imaged using ultrafast transient reflection microscopy. The expansion of the exciton cloud driven by dipolar repulsion was found to be strongly density dependent and highly anisotropic. The interaction strength between the 1D excitons was determined to be ∼3.9 × 10-14 eV cm-2, corresponding to a dipolar length of 310 nm, which is a factor of 2-3 larger than the interlayer excitons at two-dimensional van der Waals vertical interfaces. These results suggest 1D dipolar excitons with large static in-plane dipole moments in lateral TMDC heterojunctions as an exciting system for investigating quantum many-body physics.

Observation and Modulation of High-Temperature Moiré-Locale Excitons in van der Waals Heterobilayers.

Transition metal dichalcogenide heterobilayers feature strong moiré potentials with multiple local minima, which can spatially trap interlayer excitons at different locations within one moiré unit cell (dubbed moiré locales). However, current studies mainly focus on moiré excitons trapped at a single moiré locale. Exploring interlayer excitons trapped at different moiré locales is highly desirable for building polarized light-emitter arrays and studying multiorbital correlated and topological physics. Here, via enhancing the interlayer coupling and engineering the heterointerface, we report the observation and modulation of high-temperature interlayer excitons trapped at separate moiré locales in WS2/WSe2 heterobilayers. These moiré-locale excitons are identified by two emission peaks with an energy separation of ∼60 meV, exhibiting opposite circular polarizations due to their distinct local stacking registries. With the increase of temperature, two momentum-indirect moiré-locale excitons are observed, which show a distinct strain dependence with the momentum-direct one. The emission of these moiré-locale excitons can be controlled via engineering the heterointerface with different phonon scattering, while their emission energy can be further modulated via strain engineering. Our reported highly tunable interlayer excitons provide important information on understanding moiré excitonic physics, with possible applications in building high-temperature excitonic devices.

Perovskite sensitized 2D photodiodes.

A new type of perovskite sensitized programmable WSe2 photodiode is constructed based on MAPbI3/WSe2 heterojunction, presenting flexible reconfigurable characteristics and prominent optoelectronic performances.

Localization-enhanced moiré exciton in twisted transition metal dichalcogenide heterotrilayer superlattices.

The stacking of twisted two-dimensional (2D) layered materials has led to the creation of moiré superlattices, which have become a new platform for the study of quantum optics. The strong coupling of moiré superlattices can result in flat minibands that boost electronic interactions and generate interesting strongly correlated states, including unconventional superconductivity, Mott insulating states, and moiré excitons. However, the impact of adjusting and localizing moiré excitons in Van der Waals heterostructures has yet to be explored experimentally. Here, we present experimental evidence of the localization-enhanced moiré excitons in the twisted WSe2/WS2/WSe2 heterotrilayer with type-II band alignments. At low temperatures, we observed multiple excitons splitting in the twisted WSe2/WS2/WSe2 heterotrilayer, which is manifested as multiple sharp emission lines, in stark contrast to the moiré excitonic behavior of the twisted WSe2/WS2 heterobilayer (which has a linewidth 4 times wider). This is due to the enhancement of the two moiré potentials in the twisted heterotrilayer, enabling highly localized moiré excitons at the interface. The confinement effect of moiré potential on moiré excitons is further demonstrated by changes in temperature, laser power, and valley polarization. Our findings offer a new approach for localizing moiré excitons in twist-angle heterostructures, which has the potential for the development of coherent quantum light emitters.

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory.

Artificial synapse networks capable of massively parallel computing and mimicking biological neural networks can potentially improve the processing efficiency of existing information technologies. Semiconductor devices functioning as excitatory and inhibitory synapses are crucial for developing intelligence systems, such as traffic control systems. However, achieving reconfigurability between two working modes (inhibitory and excitatory) and bilingual synaptic behavior in a single transistor remains challenging. This study successfully mimics a bilingual synaptic response using an artificial synapse based on an ambipolar floating gate memory comprising tungsten selenide (WSe2)/hexagonal boron nitride (h-BN)/ molybdenum telluride (MoTe2). In this WSe2/h-BN/MoTe2 structure, ambipolar semiconductors WSe2 and MoTe2 are inserted as channel and floating gates, respectively, and h-BN serves as the tunneling barrier layer. Using either positive or negative pulse amplitude modulations at the control gate, this device with bipolar channel conduction produced eight distinct resistance states. Based on this, we experimentally projected that we could achieve 490 memory states (210 hole-resistance states + 280 electron-resistance states). Using the bipolar charge transport and multistorage states of WSe2/h-BN/MoTe2 floating gate memory, we mimicked reconfigurable excitatory and inhibitory synaptic plasticity in a single device. Furthermore, the convolution neural network formed by these synaptic devices can recognize handwritten digits with an accuracy of >92%. This study identifies the unique properties of heterostructure devices based on two-dimensional materials as well as predicts their applicability in advanced recognition of neuromorphic computing.

All-inorganic lead halide perovskite nanocrystals applied in advanced display devices.

Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.

Multifunctional Optoelectronic Synapses Based on Arrayed MoS2 Monolayers Emulating Human Association Memory.

Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS2 monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS2 prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.