Lan(n+1)+xNin(n+5)+ySi(n+1)(n+2)-z: A Symmetric Mirror Homologous Series in the La-Ni-Si System.

A series of four homologous silicides have been discovered during systematic explorations in the central part of the La-Ni-Si system at 1000 °C. All compounds La12.5Ni28.0Si18.3 (n = 3; a = 28.8686(8), c = 4.0737(2) Å, Z = 3), La22.1Ni39.0Si27.8 (n = 4; a = 20.9340(6), c = 4.1245(2) Å, Z = 1), La32.9Ni49.8Si39.3 (n = 5; a = 24.946(1), c = 4.1471(5) Å, Z = 1), and La44.8Ni66.1Si53.4 (n = 6; a = 28.995(5), c = 4.158(1) Å, Z = 1) crystallize in the hexagonal space group P63/m and can be generalized according to Lan(n+1)+xNin(n+5)+ySi(n+1)(n+2)-z with n = 3-6. Their crystal structures are based on AlB2-type building blocks, fused La-centered Ni6Si6 hexagonal prisms, yielding larger oligomeric equilateral domains with the edge size equal to n. The domains extend along the c axis and show checkered ordering of the cationic and anionic parts, while all their atoms are located on mirror planes. Lan(n+1)+xNin(n+5)+ySi(n+1)(n+2)-z can be considered as a mirror series to the La-rich La(n+1)(n+2)Nin(n-1)+2Sin(n+1), where an exchange of the formal cationic and anionic sites, i.e., La and Si, occurs. The La-Ni-Si system is the first system where two such analogous series have been observed.

Roadmap on thermoelectricity.

The increasing energy demand and the ever more pressing need for clean technologies of energy conversion pose one of the most urgent and complicated issues of our age. Thermoelectricity, namely the direct conversion of waste heat into electricity, is a promising technique based on a long-standing physical phenomenon, which still has not fully developed its potential, mainly due to the low efficiency of the process. In order to improve the thermoelectric performance, a huge effort is being made by physicists, materials scientists and engineers, with the primary aims of better understanding the fundamental issues ruling the improvement of the thermoelectric figure of merit, and finally building the most efficient thermoelectric devices. In this Roadmap an overview is given about the most recent experimental and computational results obtained within the Italian research community on the optimization of composition and morphology of some thermoelectric materials, as well as on the design of thermoelectric and hybrid thermoelectric/photovoltaic devices.

Cu3As: Uncommon Crystallographic Features, Low-Temperature Phase Transitions, Thermodynamic and Physical Properties.

The formation and crystal structure of the binary Cu3As phase have been re-investigated. Some physical properties were then measured on both single crystal and polycrystalline bulk. Cu3As melts congruently at 835 °C. At room temperature (RT), this compound has been found to crystallize in the hexagonal Cu3P prototype (hP24, P63cm) with lattice parameters: a = 7.1393(1) Å and c = 7.3113(1) Å, rather than in the anti HoH3-type (hP24, P-3c1) as indicated in literature. A small compositional range of 74.0-75.5 at.% Cu (26.0-24.5 at.% As) was found for samples synthesized at 300 and 400 °C; a corresponding slight understoichiometry is found in one out of the four Cu atomic sites, leading to the final refined composition Cu2.882(1)As. The present results disprove a change in the crystal structure above RT actually reported in the phase diagram (from γ' to γ on heating). Instead, below RT, at T = 243 K (-30 °C), a first-order structural transition to a trigonal low-temperature superstructure, LT-Cu3-xAs (hP72, P-3c1) has been found. The LT polymorph is metrically related to the RT one, having the c lattice parameter three times larger: a = 7.110(2) Å and c = 21.879(4) Å. Both the high- and low-temperature polymorphs are characterized by the presence of a tridimensional (3D) uncommon and rigid Cu sublattice of the lonsdaleite type (Cu atoms tetrahedrally bonded), which remains almost unaffected by the structural change(s), and characteristic layers of triangular 'Cu3As'-units (each hosting one As atom at the center, interconnected each other by sharing the three vertices). The first-order transition is then followed by an additional structural change when lowering the temperature, which induces doubling of also the lattice parameter a. Differential scanning calorimetry nicely detects the first low-temperature structural change occurring at T = 243 K, with an associated enthalpy difference, ΔH(TR), of approximately 2 J/g (0.53 kJ/mol). Low-temperature electrical resistivity shows a typical metallic behavior; clear anomalies are detected in correspondence to the solid-state transformations. The Seebeck coefficient, measured as a function of temperature, highlights a conduction of n-type. The temperature dependence of the magnetic susceptibility displays an overall constant diamagnetic response.

Correlations between structure, microstructure and ionic conductivity in (Gd,Sm)-doped ceria.

The structural, microstructural, Raman and ionic conductivity properties of (Gd,Sm)-doped ceria were studied and compared to the ones of similar ceria systems with the aim of deepening the comprehension of the correlations between defect chemistry and movement of oxygen vacancies in such materials, which are ideal candidates as electrolytes in solid oxide cells. The system was chosen as it combines the advantages of using the most effective doping ions for ceria, namely Sm3+ and Gd3+, and the expected positive effects of multiple doping. The main effect of double doping on the structure is the enlargement of the compositional region where ionic conductivity takes place, due to the entrance of the smaller doping ions into defect clusters, mainly trimers and dimers (RE ≡ rare earth). On the other hand, the formation of such clusters also affects ionic conductivity, as it causes the occurrence of a double activation energy with a temperature threshold located at ∼770 K. The dissociation of trimers above this temperature induces the appearance of a high temperature activation energy which is lower than the one observed in singly-doped systems, such as Sm- and Nd-doped ceria, showing the unique value of this parameter.

Roles of Defects and Sb-Doping in the Thermoelectric Properties of Full-Heusler Fe2TiSn.

The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet proven experimentally, due to the difficulty in obtaining reproducible, homogeneous, phase-pure and defect-free samples. In this work, we studied Fe2TiSn1-xSbx polycrystals (x from 0 to 0.6), fabricated by high-frequency melting and long-time high-temperature annealing. We obtained fairly good phase purity, a homogeneous microstructure, and good matrix stoichiometry. Although the intrinsic p-type transport behavior is dominant, n-type charge compensation by Sb-doping is demonstrated. Calculations of the formation energy of defects and electronic properties carried out using the density functional theory formalism reveal that charged iron vacancies VFe2- are the dominant defects responsible for the intrinsic p-type doping of Fe2TiSn under all types of (except Fe-rich) growing conditions. In addition, Sb substitutions at the Sn site give rise either to SbSn, SbSn1+, which are responsible for n-type doping and magnetism (SbSn) or to magnetic SbSn1-, which act as additional p-type dopants. Our experimental data highlight good thermoelectric properties close to room temperature, with Seebeck coefficients up to 56 µV/K in the x = 0.2 sample and power factors up to 4.8 × 10-4 W m-1 K-2 in the x = 0.1 sample. Our calculations indicate the appearance of a pseudogap under Ti-rich conditions and a large Sb-doping level, possibly improving further the thermoelectric properties.

Crystal and Magnetic Structures of the Ternary Ho2Ni0.8Si1.2 and Ho2Ni0.8Ge1.2 Compounds: An Example of Intermetallics Crystallizing with the Zr2Ni1-xP Prototype.

We report two new rare-earth (R) ternary intermetallic compounds-Ho2Ni0.8T1.2 with T = Si and Ge-that correspond to the R5Ni2T3 phase earlier reported to form in Dy-Ni-T and Ho-Ni-T ternary systems. The compounds crystallize in a filled version of the orthorhombic Zr2Ni1-xP-type structure with x = 0.52; their stoichiometry, determined from both single-crystal and powder X-ray diffraction data, is centered on Ho2Ni0.8T1.2 with a narrow solid solubility range for the silicide, while the germanide appears to be a line phase. In addition to R = Dy and Ho, R2Ni0.8T1.2 compounds also form for R = Y and Tb, representing the first examples of rare-earth-based compounds adopting the Zr2Ni1-xP structural prototype. Bulk magnetization data reveal the main transitions of the ferrimagnetic or ferromagnetic type at TC = 38 K for Ho2Ni0.8Si1.2 and TC = 37 K for Ho2Ni0.8Ge1.2, which are followed by subsequent magnetic reordering at lower temperatures. Neutron diffraction shows complex magnetic structures below TC with both ferromagnetic and antiferromagnetic components and magnetic propagation vector κ1 = [0, 0, 0]. Below TN ≅ 24 K (22 K) for the silicide (germanide), an additional antiferromagnetic coupling following an incommensurate magnetic propagation vector κ2 = [κx, 0, 0] appears to coexist with the first magnetic structure.

Evaluation of the Defect Cluster Content in Singly and Doubly Doped Ceria through In Situ High-Pressure X-ray Diffraction.

Defect aggregates in doped ceria play a crucial role in blocking the movement of oxygen vacancies and hence in reducing ionic conductivity. Nevertheless, evaluation of their amount and the correlation between domain size and transport properties is still an open issue. Data derived from a high-pressure X-ray diffraction investigation performed on the Ce1-x(Nd0.74Tm0.26)xO2-x/2 system are employed to develop a novel approach aimed at evaluating the defect aggregate content; the results are critically discussed in comparison to the ones previously obtained from Sm- and Lu-doped ceria. Defect clusters are present even at the lowest considered x value, and their content increases with increasing x and decreasing rare earth ion (RE3+) size; their amount, distribution, and spatial correlation can be interpreted as a complex interplay between the defects' binding energy, nucleation rate, and growth rate. The synoptic analysis of data derived from all of the considered systems also suggests that the detection limit of the defects by X-ray diffraction is correlated to the defect size rather than to their amount, and that the vacancies' flow through the lattice is hindered by defects irrespective of their size and association degree.

Stability, Crystal Chemistry, and Magnetism of U2+xNi21-xB6 and Nb3-yNi20+yB6 and the Role of Uranium in the Formation of the Quaternary U2-zNbzNi21B6 and UδNb3-δNi20B6 Systems.

We investigated the U-Ni-B and Nb-Ni-B systems to search for possible new heavy fermion compounds and superconducting materials. The formation, crystal chemistry, and physical properties of U2Ni21B6 and Nb3-yNi20+yB6 [ternary derivatives of the cubic Cr23C6-type (cF116, Fm3̅m)] have been studied; the formation of the hypothetical "U3Ni20B6" and "Nb2Ni21B6" has been disproved. U2Ni21B6 [a = 10.6701(2) Å] crystallizes in the ordered W2Cr21C6-type, whereas Nb3-yNi20+yB6 [a = 10.5842(1) Å] adopts the Mg3Ni20B6-type. Ni in U2Ni21B6 can be substituted by U, leading to the solid solution U2+xNi21-xB6 (0 ≤ x ≤ 0.3); oppositely, Nb in Nb3Ni20B6 is partially replaced by Ni, forming the solution Nb3-yNi20+yB6 (0 ≤ y ≤ 0.5), none of them reaching the limit corresponding to the hypothetically ordered "U3Ni20B6" and "Nb2Ni21B6". These results prompted us to investigate quaternary compounds U2-zNbzNi21B6 and UδNb3-δNi20B6: strong competition in the occupancy of the 4a and 8c sites by U, Nb, and Ni atoms has been observed, with the 4a site occupied by U/Ni atoms only and the 8c site filled by U/Nb atoms only. U2Ni21B6, U2.3Ni20.7B6, and Nb3Ni20B6 are Pauli paramagnets. Interestingly, Nb2.5Ni20.5B6 shows ferromagnetism with TC ≈ 11 K; the Curie-Weiss fit gives an effective magnetic moment of 2.78 µB/Ni, suggesting that all Ni atoms in the formula unit contribute to the total magnetic moment. The M(H) data at 2 K further corroborate the ferromagnetic behavior with a saturation moment of 10 µB/fu (≈0.49 µB/Ni). The magnetic moment of Ni at the 4a site induces a moment in all of the Ni atoms of the whole unit cell (32f and 48h sites), with all atoms ordering ferromagnetically at 11 K. Density functional theory (DFT) shows that the formation of U2Ni21B6 and Nb3Ni20B6 is energetically preferred. The various electronic states generating ferromagnetism on Nb2.5Ni20.5B6 and Pauli paramagnetism on U2Ni21B6 and Nb3Ni20B6 have been identified.

Lu-, Sm-, and Gd-Doped Ceria: A Comparative Approach to Their Structural Properties.

A room temperature structural study has been performed through the whole compositional range of the (Ce1-xLux)O2-x/2 system by synchrotron X-ray diffraction and µ-Raman spectroscopy. Samples were synthesized by thermal treatment in air at 1373 K of coprecipitated mixed oxalates. A CeO2-based solid solution with a fluorite-type structure (F) was found to be stable up to x = 0.4, while at higher Lu content a (F + C) biphasic region was observed, with C being the cubic atomic arrangement typical of sesquioxides of the heaviest rare earths. A comparative approach including also results deriving from other (Ce1-xREx)O2-x/2 systems (RE ≡ Gd and Sm) allowed us to conclude that the compositional extent of the F solid solution is a complex function of RE3+ size and RE compressibility. On this basis, the dependence of ionic conductivity on the RE identity was interpreted as related both to the Ce4+/RE3+ size closeness and to RE compressibility. Ce4+/RE3+ dimensional issues were also revealed to rule the appearance of the hybrid structure observed in the two aforementioned systems, consisting of the intimate intergrowth of C microdomains within the F-based host lattice. Moreover, a more extended definition of F-based solid solution, including also the hybrid structure, is formulated; the latter is meant as a modification of the former, occurring when mainly RE-vacancy aggregates are incorporated into the host lattice in spite of isolated RE ions. By µ-Raman spectroscopy it was possible to demonstrate that the mechanism of oxygen vacancy formation is common to all the systems studied, provided that the structure of the F-based solid solution, also including the hybrid structure, is retained.

Crystal Chemistry of the New Families of Interstitial Compounds R6Mg23C (R = La, Ce, Pr, Nd, Sm, or Gd) and Ce6Mg23Z (Z = C, Si, Ge, Sn, Pb, P, As, or Sb).

The crystal chemical features of the new series of compounds R6Mg23C with R = La-Sm or Gd and Ce6Mg23Z with Z = C, Si, Ge, Sn, Pb, P, As, or Sb have been studied by means of single-crystal and powder X-ray diffraction techniques. All phases crystallize with the cubic Zr6Zn23Si prototype (cF120, space group Fm3̅m, Z = 4), a filled variant of the Th6Mn23 structure. While no Th6Mn23-type binary rare earth-magnesium compound is known to exist, the addition of a third element Z (only 3 atom %), located into the octahedral cavity of the Th6Mn23 cell (Wyckoff site 4a), stabilizes this structural arrangement and makes possible the formation of the ternary R6Mg23Z compounds. The results of both structural and topological analyses as well as of LMTO electronic structure calculations show that the interstitial element plays a crucial role in the stability of these phases, forming a strongly bonded [R6Z] octahedral moiety spaced by zeolite cage-like [Mg45] clusters. Considering these two building units, the crystal structure of these apparently complex intermetallics can be simplified to the NaCl-type topology. Moreover, a structural relationship between RMg3 and R6Mg23C compounds has been unveiled; the latter can be described as substitutional derivatives of the former. The geometrical distortions and the consequent symmetry reduction that accompany this transformation are explicitly described by means of the Bärnighausen formalism within group theory.

Structural features of Sm- and Gd-doped ceria studied by synchrotron X-ray diffraction and µ-Raman spectroscopy.

A structural study of Sm- and Gd-doped ceria was performed with the aim to clarify some unexplained structural features. (Ce1-xREx)O2-x/2 samples (RE ≡ Sm, Gd; x = 0, 0.1, ..., 1) were prepared by coprecipitation of mixed oxalates and subsequent thermal treatment at 1473, 1173, or 1073 K in air; they were then analyzed at room temperature both by synchrotron X-ray diffraction and µ-Raman spectroscopy. Two structural models were adopted to fit the experimental data, namely, a fluoritic one, resembling the CeO2 structure at low RE content, and a hybrid one at higher RE content, intermediate between the CeO2 and the RE2O3 structures. Two main transitions were detected along the compositional range: (a) an RE-dependent transition at the boundary between the fluoritic and the hybrid regions, of a chemical nature; (b) an RE-independent transition within the hybrid region at ∼0.5, having a purely geometrical nature. The presence of two finely interlaced F- and C-based structures within the hybrid region was confirmed, and hints of their composition were obtained by µ-Raman spectroscopy. The obtained results indicate a possible explanation for the non-Vegard behavioral trend of the cell parameters.

High temperature structural study of Gd-doped ceria by synchrotron X-ray diffraction (673 K ≤ T ≤ 1073 K).

The crystallographic features of Gd-doped ceria were investigated at the operating temperature of solid oxides fuel cells, where these materials are used as solid electrolytes. (Ce(1-x)Gd(x))O(2-x/2) samples (x = 0.1, 0.3, 0.5, 0.7) were prepared by coprecipitation of mixed oxalates, treated at 1473 K in air, and analyzed by synchrotron X-ray diffraction in the temperature range 673 K ≤ T ≤ 1073 K at the Elettra synchrotron radiation facility located in Trieste, Italy. In the whole temperature span a boundary was found at x ∼ 0.2 between a CeO2-based solid solution (for x ≤ 0.2) and a structure where Gd2O3 microdomains grow within the CeO2 matrix, taking advantage of the similarity between Gd(3+) and Ce(4+) sizes; the existence of the boundary at x ∼ 0.2 was confirmed also by measurements of ionic conductivity performed by impedance spectroscopy. Similar to what observed at room temperature, the trend of the cell parameter shows the presence of a maximum; with increasing temperature, the composition corresponding to the maximum moves toward lower Gd content. This evidence can be explained by analyzing the behavior of the coefficient of thermal expansion as a function of composition.

Synthesis, crystal and electronic structure of the quaternary magnetic EuTAl4Si2 (T = Rh and Ir) compounds.

Single crystals of the quaternary europium compounds EuRhAl4Si2 and EuIrAl4Si2 were synthesized by using the Al-Si binary eutectic as a flux. The structure of the two quaternary compounds has been refined by single crystal X-ray diffraction. Both compounds are stoichiometric and adopt an ordered derivative of the ternary KCu4S3 structure type (tetragonal tP8, P4/mmm). The two compounds reported here represent the first example of a quaternary and truly stoichiometric 1:1:4:2 phase crystallizing with this structure type. In light of our present results, the structure of the BaMg4Si3 compound given in literature as representing a new prototype is actually isotypic with the KCu4S3 structure. Local spin density approximation including the Hubbard U parameter (LSDA + U) calculations show that Eu ions are in the divalent state, with a significant hybridization between the Eu 5d, Rh (Ir) 4d (5d), Si 3p and Al 3p states. Magnetic susceptibility measured along the [001] direction confirms the divalent nature of the Eu ions in EuRhAl4Si2 and EuIrAl4Si2, which order magnetically near ∼11 and ∼15 K, respectively.

A highly convergent synthesis of tricyclic N-heterocycles coupling an Ugi reaction with a tandem S(N)2'-Heck double cyclization.

A small library of natural product-like compounds has been assembled by coupling an Ugi multicomponent reaction with two postcondensation transformations, carried out in one-pot fashion: a S(N)2' cyclization followed by an intramolecular Heck reaction.

Study of retinoic acid polymorphism.

Some authors recently hypothesized the existence of a new retinoic acid (RA) phase in addition to the two already known polymorphs. We investigated RA polymorphism and our results exclude the presence of new modifications and refine the properties of the known forms. By comparison of simulated and acquired X-Ray Powder Diffraction (XRPD) it was possible to identify only the known monoclinic (I) and the triclinic (II) modifications; the same were also characterized by DSC, IR, and Raman spectroscopy. A solubility study associated to DSC allowed establishing an enantiotropic relationship between the two forms, with form II being less stable (DeltaGII/I=0.71 kJ/mol at 37 degrees C) below the transition temperature (136.6 degrees C; DeltaH=3.2 kJ/mol). The intrinsic dissolution rate (IDR) (I=61 microg/cm2xmin-1; II=125 microg/cm2xmin-1) confirmed this energetic relationship. The kinetics of solid transition I-->II was examined and its activation energy estimated (356 kJ/mol). The attempts to produce new phases allowed the development of methods to obtain the two polymorphs with high chemical and polymorphic purity. A validated DSC method is presented that enables detection of the presence of form I at a level of 1% (w/w) when in mixture with form II.