Two-photon emission from a superlattice-based superconducting light-emitting structure.

Superconductor-semiconductor hybrid devices can bridge the gap between solid-state-based and photonics-based quantum systems, enabling new hybrid computing schemes, offering increased scalability and robustness. One example for a hybrid device is the superconducting light-emitting diode (SLED). SLEDs have been theoretically shown to emit polarization-entangled photon pairs by utilizing radiative recombination of Cooper pairs. However, the two-photon nature of the emission has not been shown experimentally before. We demonstrate two-photon emission in a GaAs/AlGaAs SLED. Measured electroluminescence spectra reveal unique two-photon superconducting features below the critical temperature (Tc), while temperature-dependent photon-pair correlation experiments (g(2)(τ,T)) demonstrate temperature-dependent time coincidences below Tc between photons emitted from the SLED. Our results pave the way for compact and efficient superconducting quantum light sources and open new directions in light-matter interaction studies.

Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling.

We demonstrate enhanced Andreev reflection in a Nb/InGaAs/InP-based superconductor-semiconductor hybrid device resulting in increased Cooper-pair injection efficiency, achieved by Cooper-pair tunneling into a semiconductor quantum well resonant state. We show this enhancement by investigating the differential conductance spectra of two kinds of samples: one exhibiting resonant states and one which does not. We observe resonant features alongside strong enhancement of Cooper pair injection in the resonant sample, and lack of Cooper pair injection in the nonresonant sample. The theoretical modeling for measured spectra by a numerical approach agrees well with the experimental data. Our findings open a wide range of directions in condensed matter physics and in quantum technologies such as superconducting light-emitting diodes and structures supporting exotic excitations.

High-T c Cooper-pair injection in a semiconductor-superconductor structure.

We observe Andreev reflection in a YBCO-GaN junction through differential conductance spectroscopy. A strong characteristic zero-bias peak was observed and persisted up to the critical temperature of the superconductor with a smaller superconducting order parameter Δ âˆ¼ 1 meV. The presence of Andreev reflection with the small Δ in comparison to its value for high-T c superconductors forms an important milestone toward demonstration of superconducting proximity in high-T c/semiconductor junctions. Experimental results were then compared to the theoretical model with good agreement. Efficient injection of Cooper pairs into direct bandgap semiconducting structures, together with high transition temperature of YBCO, can pave the way to novel optoelectronics and quantum optical studies of high-T c materials.

Enhanced two-photon amplification in superconductor-semiconductor plasmonic waveguides.

We theoretically demonstrate significant enhancement of two-photon amplification by using a superconductor for both a Cooper-pair source and surface plasmon-polariton mode guiding. Cooper-pair-based gain active region restriction to the superconductor-semiconductor interface limits its potentially highly efficient two-photon gain process. Using the superconductor layer for a plasmonic waveguide structure allows strong photon confinement while reducing design and fabrication constraints. This results in three orders of magnitude enhancement of the superconducting two-photon gain (TPG) compared to superconductor-based dielectric waveguides. Moreover, a superconducting TPG produced by a plasmonic waveguide increases with carrier concentration, meeting practical device requirements. Our results pave the way for efficient two-photon amplification realization in nanoscale devices.

Observation of 2D semiconductor P-type dark-exciton lifetime using two-photon ultrafast spectroscopy.

We report direct measurements of intrinsic lifetimes of P-type dark-excitons in MoS2 monolayers. Using sub-gap excitation, we demonstrate two-photon excited direct population of P-type dark excitons, observe their scattering to bright states and decay with femtosecond resolution. In contrast to one-photon excitation schemes, non-monotonic density variation in bright exciton population observed under two-photon excitation shows the indirect nature of its population and competing decay pathways. Detailed modeling of different recombination pathways of bright and dark excitons allows experimental measurement of 2P dark → 1S bright exciton scattering rates. These insights into the dark states in a MoS2 monolayer pave the way for novel devices such as quantum memories and computing.

Andreev Reflection in a Superconducting Light-Emitting Diode.

We experimentally demonstrate Cooper-pair injection into a superconducting light-emitting diode by observing Andreev reflection at the superconductor-semiconductor interface, overcoming the contradicting requirements of an electrically transparent interface and radiative recombination efficiency. The device exhibits electroluminescence enhancement at the quasi-Fermi energy at temperatures below Tc. The theoretically predicted conductance and electroluminescence spectra based on Cooper-pair injection into the semiconductor correspond well to our experimental results. Our findings pave the way for practical superconductor-semiconductor quantum light sources.

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode.

We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-Tc superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tc-superconductor devices in future technologies.