Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement.

Developing nanoscale electrical characterization techniques adapted to three-dimensional (3D) geometry is essential for optimization of the epitaxial structure and doping process of nano- and microwires. In this paper, we demonstrate the assessment of the depletion width as well as the doping profile at the nanoscale of individual microwire core-shell light-emitting devices by capacitance-voltage measurements. A statistical study carried out on single wires shows the consistency of the doping profile values measured for individual microwires compared to assemblies of hundreds of wires processed on the same sample. The robustness of this method is then demonstrated on four epitaxial structures with different growth and doping conditions. Finally, electron-beam-induced current and secondary electron profiles are used to validate the depletion region width and the position in the core-shell structure.

Effects of Polyethylenimine and Its Molecular Weight on the Chemical Bath Deposition of ZnO Nanowires.

The addition of polyethylenimine (PEI) in the standard chemical bath deposition (CBD) of ZnO nanowires has received an increasing interest for monitoring their aspect ratio, but the physicochemical processes at work are still under debate. To address this issue, the effects of PEI are disentangled from the effects of ammonia and investigated over a broad range of molecular weight (i.e., chain length) and concentration, varying from 1300 to 750 000 and from 1.5 to 10 mM, respectively. It is shown that the addition of PEI strongly favors the elongation of ZnO nanowires by suppressing the homogeneous growth at the benefit of the heterogeneous growth as well as by changing the supersaturation level through a pH modification. PEI is further found to inhibit the development of the sidewalls of ZnO nanowires by adsorbing on their nonpolar m-planes, as supported by Raman scattering analysis. The inhibition proceeds even in the low pH range, which somehow rules out the present involvement of electrostatic interactions as the dominant mechanism for the adsorption. Furthermore, it is revealed that PEI drastically affects the nucleation process of ZnO nanowires on the polycrystalline ZnO seed layer by presumably adsorbing on the nanoparticles oriented with the m-planes parallel to the surface, reducing in turn their nucleation rate as well as inducing a significant vertical misalignment. These findings, specifically showing the effects of the PEI molecular weight and concentration, cast light onto its multiple roles in the CBD of ZnO nanowires.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors.

The low-cost fabrication of ZnO nanowire/CuSCN heterojunctions is demonstrated by combining chemical bath deposition with impregnation techniques. The ZnO nanowire arrays are completely filled by the CuSCN layer from their bottoms to their tops. The CuSCN layer is formed of columnar grains that are strongly oriented along the [003] direction owing to the polymeric form of the ß-rhombohedral crystalline phase. Importantly, an annealing step is found essential in a fairly narrow range of low temperatures, not only for outgassing the solvent from the CuSCN layer, but also for reducing the density of interfacial defects. The resulting electrical properties of annealed ZnO nanowire/CuSCN heterojunctions are strongly improved: a maximum rectification ratio of 2644 at ±2 V is achieved following annealing at 150 °C under air atmosphere, which is related to a strong decrease in the reverse current density. Interestingly, the corresponding self-powered UV photodetectors exhibit a responsivity of 0.02 A/W at zero bias and at 370 nm with a UV-to-visible (370-500 nm) rejection ratio of 100 under an irradiance of 100 mW/cm(2). The UV selectivity at 370 nm can also be readily modulated by tuning the length of ZnO nanowires. Eventually, a significant photovoltaic effect is revealed for this type of heterojunctions, leading to an open circuit voltage of 37 mV and a short circuit current density of 51 µA/cm(2), which may be useful for the self-powering of the complete device. These findings show the underlying physical mechanisms at work in ZnO nanowire/CuSCN heterojunctions and reveal their high potential as self-powered UV photodetectors.