Ultra-high vacuum compatible full metal atom beam shutter for optical lattice clocks.

We developed a shutter driven by a solenoid to switch on/off the atomic beam of optical lattice clocks developed at KRISS [C. Y. Park et al., Metrologia 50, 119 (2013), S. Lee et al., New J. Phys. 18, 033030 (2016), H. Kim et al., Jpn. J. Appl. Phys. 56, 050302 (2017), and H. Kim et al., Metrologia 58, 055007 (2021)]. The shutter design was focused on long lifetime and compatibility with an ultra-high vacuum (UHV) environment. Thus, the solenoid was designed to be easily installed and removed from the air-side of a CF flange of the shutter. The flag in the vacuum-side moves only with the simple spring action of a sheet of a metal plate without any frictional movement of mechanical parts. All parts in the vacuum-side were made of metals (stainless steel and pure iron) to be baked over the temperature of 200 °C for UHV. The flag head of the shutter displaces up to 10 mm (5 mm) with a response time of 50 (30 ms) and 80 ms (10 ms) for the opening-action and the closing-action, respectively. The lifetime was tested up to 6 × 106 cycles with no performance degradation. We expect the actual lifetime to be much longer than this by virtue of its friction-free design.

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications.

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

Advanced Satellite-Based Frequency Transfer at the 10-16 Level.

Advanced satellite-based frequency transfers by two-way carrier-phase (TWCP) and integer precise point positioning have been performed between the National Institute of Information and Communications Technology and Korea Research Institute of Standards and Science. We confirm that the disagreement between them is less than at an averaging time of several days. In addition, an overseas frequency ratio measurement of Sr and Yb optical lattice clocks was directly performed by TWCP. We achieved an uncertainty at the mid-10-16 level after a total measurement time of 12 h. The frequency ratio was consistent with the recently reported values within the uncertainty.

Atom shutter using bender piezoactuator.

A flag-type atom shutter based on a rotating lever that is driven by a bender piezoelectric actuator was developed to manipulate atomic beams. The shutter flag was displaced by ∼10 mm to open and close a 5-mm-diameter aperture with a shutter time of 13 ms that produced small mechanical vibrations. The short-term shutter time stability for each cycle was 0.03 ms and the long-term stability over an average of 20 000 cycles was 0.02 ms. The operational cycle number (lifetime) of the shutter reached 2.0 × 106 cycles after an intermittent operation over a period of eight months in an ultra-high vacuum chamber, and another shutter in an atmospheric environment swung for 2.6 × 107 cycles of continuous operation at 5 Hz for a period of 60 days without major problems. The shutter was shown to be compatible with the operation in an ultra-high vacuum at a low 10-7 Pa level after a gentle baking treatment.

Neurological Change after Gamma Knife Radiosurgery for Brain Metastases Involving the Motor Cortex.

BACKGROUND: Although Gamma Knife radiosurgery (GKRS) can provide beneficial therapeutic effects for patients with brain metastases, lesions involving the eloquent areas carry a higher risk of neurologic deterioration after treatment, compared to those located in the non-eloquent areas. We aimed to investigate neurological change of the patients with brain metastases involving the motor cortex (MC) and the relevant factors related to neurological deterioration after GKRS. METHODS: We retrospectively reviewed clinical, radiological and dosimetry data of 51 patients who underwent GKRS for 60 brain metastases involving the MC. Prior to GKRS, motor deficits existed in 26 patients (50.9%). The mean target volume was 3.2 cc (range 0.001-14.1) at the time of GKRS, and the mean prescription dose was 18.6 Gy (range 12-24 Gy). RESULTS: The actuarial median survival time from GKRS was 19.2±5.0 months. The calculated local tumor control rates at 6 and 12 months after GKRS were 89.7% and 77.4%, respectively. During the median clinical follow-up duration of 12.3±2.6 months (range 1-54 months), 18 patients (35.3%) experienced new or worsened neurologic deficits with a median onset time of 2.5±0.5 months (range 0.3-9.7 months) after GKRS. Among various factors, prescription dose (>20 Gy) was a significant factor for the new or worsened neurologic deficits in univariate (p=0.027) and multivariate (p=0.034) analysis. The managements of 18 patients were steroid medication (n=10), boost radiation therapy (n=5), and surgery (n=3), and neurological improvement was achieved in 9 (50.0%). CONCLUSION: In our series, prescription dose (>20 Gy) was significantly related to neurological deterioration after GKRS for brain metastases involving the MC. Therefore, we suggest that careful dose adjustment would be required for lesions involving the MC to avoid neurological deterioration requiring additional treatment in the patients with limited life expectancy.

Continuous Renal Replacement Therapy for Acute Renal Failure in Patients with Traumatic Brain Injury.

OBJECTIVE: The purpose of this study was to investigate the impact of continuous renal replacement therapy (CRRT) on survival and relevant factors in patients who underwent CRRT after traumatic brain injury (TBI). METHODS: We retrospectively reviewed the laboratory, clinical, and radiological data of 29 patients who underwent CRRT among 1,190 TBI patients treated at our institution between April 2011 and June 2015. There were 20 men and 9 women, and the mean age was 60.2 years. The mean initial Glasgow Coma Scale score was 9.2, and the mean injury severity score was 24. Kaplan-Meier method and Cox regression were used for analysis of survival and relevant factors. RESULTS: The actuarial median survival time of the 29 patients was 163 days (range, 3-317). Among the above 29 patients, 22 died with a median survival time of 8 days (range, 3-55). The causes of death were TBI-related in 8, sepsis due to pneumonia or acute respiratory distress syndrome (ARDS) in 4, and multi-organ failure in 10. Among the various factors, urine quantity of more than 500 mL for 24-hours before receiving CRRT was a significant and favorable factor for survival in the multivariate analysis (p=0.026). CONCLUSION: According to our results, we suggest that early intervention with CRRT may be beneficial in the treatment of TBI patients with impending acute renal failure (ARF). To define the therapeutic advantages of early CRRT in the TBI patients with ARF, a well-designed and controlled study with more cases is required.

Ultrafast Ramsey interferometry to implement cold atomic qubit gates.

Quantum computing is based on unitary operations in a two-level quantum system, a qubit, as the fundamental building block, and the ability to perform qubit operations in an amount of time that is considerably shorter than the coherence time is an essential requirement for quantum computation. Here, we present an experimental demonstration of arbitrary single-qubit SU(2) quantum gate operations achieved at a terahertz clock speed. Implemented by coherent control methods of tailored ultrafast laser interaction with cold rubidium atomic qubits, Bloch vector manipulation about all three rotational axes was successfully demonstrated. The dynamic evolution of the qubits was successfully measured by devised femtosecond Ramsey interferometry. We anticipate this demonstration to be a starting point to process quantum algorithm in a simplified manner by a programmed sequence of femtosecond laser pulses.

Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.

Partial strain relaxation effects on polarization ratio of semipolar (112̄2) InxGa1−xN/GaN quantum well (QW) structures grown on relaxed InGaN buffers were investigated using the multiband effective-mass theory. The absolute value of the polarization ratio gradually decreases with increasing In composition in InGaN buffer layer when the strain relaxation ratio (ε0y'y'−εy'y')/ε0y'y' along y'-axis is assumed to be linearly proportional to the difference of lattice constants between the well and the buffer layer. Also, it changes its sign for the QW structure grown on InGaN buffer layer with a relatively larger In composition (x > 0.07). These results are in good agreement with the experiment. This can be explained by the fact that, with increasing In composition in the InGaN subsrate, the spontaneous emission rate for the y'-polarization gradually increases while that for x'-polarization decreases due to the decrease in a matrix element at the band-edge (k‖ = 0).

Generation of 578-nm yellow light over 10 mW by second harmonic generation of an 1156-nm external-cavity diode laser.

578-nm yellow light with an output power of more than 10 mW was obtained using a waveguide periodically-poled-lithium-niobate crystal as a nonlinear medium for second harmonic generation, which is the highest output power at this wavelength using second harmonic generation of a solid state laser source without an enhancement ring cavity, to our knowledge. To achieve this result we made a high power 1156-nm external-cavity diode laser with the maximum output power of more than 250 mW. This system is expected to be an excellent alternative to the system using the sum-frequency generation with the advantage of simplicity and cost-effectiveness, and will be used as a clock laser of the ytterbium optical lattice clock with robust and reliable operation.

Linewidth reduction of a distributed-feedback diode laser using an all-fiber interferometer with short path imbalance.

The linewidth of a distributed-feedback (DFB) diode laser at 1156 nm, of which free-running linewidth was 3 MHz, was reduced to 15 kHz using an all-fiber interferometer with 5-m-long path imbalance. Optical power loss and bandwidth limitation were negligible with this short optical fiber patch cord. This result was achieved without acoustic and vibration isolations, and the frequency lock could be maintained over weeks. In addition to its simplicity, compactness, robustness, and cost-effectiveness, this technique can be applied at any wavelength owing to the availability of DFB diode lasers and fiber-optic components.

Strong-field quantum control of 2 + 1 photon absorption of atomic sodium.

We demonstrate ultrafast coherent control of multiphoton absorption in a dynamically shifted energy level structure. In a three-level system that models optical interactions with sodium atoms, we control the quantum interference of sequential 2 + 1 photons and direct three-photon transitions. Dynamic change in energy levels predicts an enormous enhancement of |7p>-state excitation in the strong-field regime by a negatively chirped pulse. In addition, the |4s>-state excitation is enhanced symmetrically by nonzero linear chirp rates given as a function of laser peak intensity and laser detuning. Experiments performed by ultrafast shaped-pulse excitation of ground-state atomic sodium verifies the various strong-field contributions to |3s>-|7p> and |3s>-|4s> transitions. The result suggests that for systems of molecular level understanding adiabatic control approach with analytically shaped pulses becomes a more direct control than feedback-loop black-box approaches.

Narrow linewidth 578 nm light generation using frequency-doubling with a waveguide PPLN pumped by an optical injection-locked diode laser.

This study demonstrates 578 nm yellow light generation with a narrow linewidth using a waveguide periodically poled lithium niboate (PPLN) and an optical injection-locked diode laser. The frequency of an external cavity diode laser used as a master laser operating at 1156 nm in optical injection-locking mode was locked into a high-finesse cavity with the Pound-Drever-Hall technique, which results in a linewidth reduction of the master laser. The linewidth of the master laser was estimated to be approximately 1.6 kHz. In an effort to amplify the optical power, a distributed feed-back laser was phase-locked to the master laser by an optical injection-locking technique. A waveguide PPLN was used for second harmonic generation. Frequency-doubled yellow light of approximately 2.4 mW was obtained with a conversion efficiency of 6.5%.

Demonstration of an optical frequency synthesizer with zero carrier-envelope-offset frequency stabilized by the direct locking method.

We developed an optical frequency synthesizer (OFS) with the carrier-envelope-offset frequency locked to 0 Hz achieved using the "direct locking method." This method differs from a conventional phaselock method in that the interference signal from a self-referencing f-2f interferometer is directly fed back to the carrier-envelope-phase control of a femtosecond laser in the time domain. A comparison of the optical frequency of the new OFS to that of a conventional OFS stabilized by a phase-lock method showed that the frequency comb of the new OFS was not different to that of the conventional OFS within an uncertainty of 5.68x10(-16). As a practical application of this OFS, we measured the absolute frequency of an acetylene-stabilized diode laser serving as an optical frequency standard in optical communications.

Frequency-stabilized high-power violet laser diode with an ytterbium hollow-cathode lamp.

We have demonstrated in an ytterbium laser cooling and trapping experiment a high-power violet extendedcavity diode laser (ECDL) stabilized to the Yb resonant transition at 398.9 nm in an Yb hollow-cathode lamp. A frequency-dispersion signal, which we obtained by applying a modulation-free dichroic-atomic-vapor laser lock technique, allowed us to stabilize the violet ECDL at a frequency stability below 1 MHz at 1-s average time and a useful output power of 15 mW.