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1.
Psychiatry Res Neuroimaging ; 336: 111692, 2023 Dec.
Artigo em Inglês | MEDLINE | ID: mdl-37673711

RESUMO

This article describes the protocol for a randomized, controlled clinical trial of a neurofeedback (NF) intervention for Tourette Syndrome (TS) and chronic tic disorder. The intervention involves using functional magnetic resonance imaging (fMRI) to provide feedback regarding activity in the supplementary motor area: participants practice controlling this brain area while using the feedback as a training signal. The previous version of this NF protocol was tested in a small study (n = 21) training adolescents with TS that yielded clinically promising results. Therefore, we plan a larger trial. Here we describe the background literature that motivated this work, the design of our original neurofeedback study protocol, and adaptations of the research study protocol for the new trial. We focus on those ideas incorporated into our protocol that may be of interest to others designing and running NF studies. For example, we highlight our approach for defining an unrelated brain region to be trained in the control group that is based on identifying a region with low functional connectivity to the target area. Consistent with a desire for transparency and open science, the new protocol is described in detail here prior to conducting the trial.


Assuntos
Neurorretroalimentação , Transtornos de Tique , Tiques , Síndrome de Tourette , Humanos , Adolescente , Síndrome de Tourette/diagnóstico por imagem , Síndrome de Tourette/terapia , Tiques/diagnóstico por imagem , Tiques/terapia , Imageamento por Ressonância Magnética/métodos , Neurorretroalimentação/métodos , Ensaios Clínicos Controlados Aleatórios como Assunto
2.
Sci Rep ; 6: 21324, 2016 Feb 18.
Artigo em Inglês | MEDLINE | ID: mdl-26887790

RESUMO

Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing. Thus, we address the thermally robust characteristics of Co/Pd multilayer SAFs by controlling a W layer as a potential buffer or capping layer. The W-capped Co/Pd multilayer SAF, which acts as a pinning layer, exhibited a wide-range plateau with sharp spin-flip and near-zero remanence at the zero field. Structural analysis of the W-capped multilayer SAF exhibited single-crystal-like c-axis oriented crystalline features after annealing at 400 °C, thereby demonstrating the applicability of these frames. In addition, when the W layer serving as a buffer layer in the Co/Pd multilayer SAF was coupled with a conventional CoFeB RL, higher annealing stability up to 425 °C and prominent antiferromagnetic coupling behavior were obtained.

3.
Sci Rep ; 5: 16903, 2015 Nov 20.
Artigo em Inglês | MEDLINE | ID: mdl-26584638

RESUMO

Perpendicularly magnetized tunnel junctions (p-MTJs) show promise as reliable candidates for next-generation memory due to their outstanding features. However, several key challenges remain that affect CoFeB/MgO-based p-MTJ performance. One significant issue is the low thermal stability (Δ) due to the rapid perpendicular magnetic anisotropy (PMA) degradation during annealing at temperatures greater than 300 °C. Thus, the ability to provide thermally robust PMA characteristics is a key steps towards extending the use of these materials. Here, we examine the influence of a W spacer on double MgO/CoFeB/W/CoFeB/MgO frames as a generic alternative layer to ensure thermally-robust PMAs at temperatures up to 425 °C. The thickness-dependent magnetic features of the W layer were evaluated at various annealing temperatures to confirm the presence of strong ferromagnetic interlayer coupling at an optimized 0.55 nm W spacer thickness. Using this W layer we achieved a higher Δ of 78 for an approximately circular 20 nm diameter free layer device.

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