RESUMO
We report the observation of a strong 2D band Raman in twisted bilayer graphene (tBLG) with large rotation angles under 638 nm and 532 nm visible laser excitations. The 2D band Raman intensity increased four-fold as opposed to the two-fold increase observed in single-layer graphene. The same tBLG samples also exhibited rotation-dependent G-line resonances and folded phonons under 364 nm UV laser excitation. We attribute this 2D band Raman enhancement to the constructive interference between two double-resonance Raman pathways, which were enabled by a nearly degenerate Dirac band in the tBLG Moiré superlattices.
RESUMO
Sum frequency generation (SFG) vibrational spectroscopy and contact angle measurements of an ionic liquid, 1-butyl-3-methylimidazolium dicyanamide [BMIM][DCA], at solid-liquid interfaces are reported. Bare solid single crystal BaF2 (111) surface, a single and few layer graphene-coated BaF2 (111) surface are used as the solid substrates. The SFG results indicate that both [BMIM](+) and [DCA](-) can be detected specifically on the graphene-coated BaF2 (111) surface, without coating only [DCA](-) are observed. [DCA](-) anions are attracted to the positively charged BaF2 (111) surface and occupy the first layer at the solid-liquid interface. The graphene coating shields the charged crystal surface and allows both cations and anions to exist at the interface. Furthermore, increase in the contact angle of BaF2 surface after graphene layers deposition suggests that the graphene coating lowers the surface energy.
RESUMO
Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications.
RESUMO
The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour deposition on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman 'D' peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.
RESUMO
As a promising one-dimensional material for building nanodevices, single-wall carbon nanotubes (SWNTs) should be organized into a rational architecture on the substrate surface. In this study, horizontally aligned SWNTs with two alignment modes were synthesized on the same R-plane sapphire wafer by chemical vapor deposition with cationized ferritins as catalysts. In the middle part of the wafer, SWNTs were aligned on the R-plane sapphire in the direction [1101]. At the edge of the wafer, SWNTs were aligned in the tangential direction to the wafer edge. The comparison of these two groups of SWNTs suggests the competition between the two alignment modes and indicates that atomic steps in high density have superior influence on the SWNTs' alignment to the crystal structure on the surface of the sapphire substrate. A "raised-head" growth mechanism model is proposed to explain why catalysts can stay active during the horizontally aligned growth of relatively long SWNTs with the strong interaction between SWNTs and the sapphire substrate.
