Prognostic value of HMGN family expression in acute myeloid leukemia.

Aim: The objective of this work was to investigate the prognostic role of the HMGN family in acute myeloid leukemia (AML). Methods: A total of 155 AML patients with HMGN1-5 expression data from the Cancer Genome Atlas database were enrolled in this study. Results: In the chemotherapy-only group, patients with high HMGN2 expression had significantly longer event-free survival (EFS) and overall survival (OS) than those with low expression (all p < 0.05), whereas high HMGN5 expressers had shorter EFS and OS than the low expressers (all p < 0.05). Multivariate analysis identified that high HMGN2 expression was an independent favorable prognostic factor for patients who only received chemotherapy (all p < 0.05). HMGN family expression had no impact on EFS and OS in AML patients receiving allogeneic hematopoietic stem cell transplantation. Conclusion: High HMGN2/5 expression is a potential prognostic indicator for AML.

Strong Superconducting Proximity Effects in PbS Semiconductor Nanowires.

We report the fabrication of strongly coupled nanohybrid superconducting junctions using PbS semiconductor nanowires and Pb0.5In0.5 superconducting electrodes. The maximum supercurrent in the junction reaches up to ∼15 µA at 0.3 K, which is the highest value ever observed in semiconductor-nanowire-based superconducting junctions. The observation of microwave-induced constant voltage steps confirms the existence of genuine Josephson coupling through the nanowire. Monotonic suppression of the critical current under an external magnetic field is also in good agreement with the narrow junction model. The temperature-dependent stochastic distribution of the switching current exhibits a crossover from phase diffusion to a thermal activation process as the temperature decreases. These strongly coupled nanohybrid superconducting junctions would be advantageous to the development of gate-tunable superconducting quantum information devices.

Photocurrent Mapping in Single-Crystal Methylammonium Lead Iodide Perovskite Nanostructures.

We investigate solution-grown single-crystal methylammonium lead iodide (MAPbI3) nanowires and nanoplates with spatially resolved photocurrent mapping. Sensitive perovskite photodetectors with Schottky contacts are fabricated by directly transferring the nanostructures on top of prepatterned gold electrodes. Scanning photocurrent microscopy (SPCM) measurements on these single-crystal nanostructures reveal a minority charge carrier diffusion length up to 21 µm, which is significantly longer than the values observed in polycrystalline MAPbI3 thin films. When the excitation energy is close to the bandgap, the photocurrent becomes substantially stronger at the edges of nanostructures, which can be understood by the enhancement of light coupling to the nanostructures. These perovskite nanostructures with long carrier diffusion lengths and strong photonic enhancement not only provide an excellent platform for studying their intrinsic properties but may also boost the performance of perovskite-based optoelectronic devices.

Spin generation via bulk spin current in three-dimensional topological insulators.

To date, spin generation in three-dimensional topological insulators is primarily modelled as a single-surface phenomenon, attributed to the momentum-spin locking on each individual surface. In this article, we propose a mechanism of spin generation where the role of the insulating yet topologically non-trivial bulk becomes explicit: an external electric field creates a transverse pure spin current through the bulk of a three-dimensional topological insulator, which transports spins between the top and bottom surfaces. Under sufficiently high surface disorder, the spin relaxation time can be extended via the Dyakonov-Perel mechanism. Consequently, both the spin generation efficiency and surface conductivity are largely enhanced. Numerical simulation confirms that this spin generation mechanism originates from the unique topological connection of the top and bottom surfaces and is absent in other two-dimensional systems such as graphene, even though they possess a similar Dirac cone-type dispersion.

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

Broadband quantum efficiency enhancement in high index nanowire resonators.

Light trapping in subwavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by the ratio of optical absorption cross section to the NW diameter, lingers around 1 in existing NW photonic devices, and the absorption enhancement suffers from a narrow spectral width. Here, we show that the absorption efficiency can be significantly improved in NWs with higher refractive indices, by an experimental observation of up to 350% apparent external quantum efficiency in lead sulfide NW resonators, a 3-fold increase compared to Si NWs. Furthermore, broadband absorption enhancement is achieved in single tapered NWs, where light of various wavelengths is absorbed at segments with different diameters. Overall, the single NW Schottky junction solar cells benefit from optical resonance, near bandgap open circuit voltage, and long minority carrier diffusion length, demonstrating power conversion efficiency comparable to Si and III-V single NW coaxial p-n junction cells but with much simpler fabrication processes.

High intensity induced photocurrent polarity switching in lead sulfide nanowire field effect transistors.

We report an optoelectronic investigation of lead sulfide nanowires (NWs) by scanning photocurrent microscopy. The photocurrent in p-type lead sulfide NW field effect transistors has demonstrated unusually nonlinear dependence on the intensity of local excitation. Surprisingly, the photocurrent polarity can be reversed under high illumination intensity on the order of 100 W cm(-2). The origin of this photocurrent polarity switching is that the photo-injected carriers flip the direction of the electric field near the contact. These observations shed light on the nonlinear optoelectronic characteristics in semiconductor nanostructures and may provide an innovative method for optically tailoring local band structures.