Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation.

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work, we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including postprocessing. Under specific conditions, the formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature, and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.

Tissue degeneration in ALS affected spinal cord evaluated by Raman spectroscopy.

The Raman spectral features from spinal cord tissue sections of transgenic, ALS model mice and non-transgenic mice were compared using 457 nm excitation line, profiting from the favourable signal intensity obtained in the molecular fingerprint region at this wavelength. Transverse sections from four SOD1G93A mice at 75 days and from two at 90 days after birth were analysed and compared with sections of similarly aged control mice. The spectra acquired within the grey matter of tissue sections from the diseased mice is markedly different from the grey matter signature of healthy mice. In particular, we observe an intensity increase in the spectral windows 450-650 cm-1 and 1050-1200 cm-1, accompanied by an intensity decrease in the lipid contributions at ~1660 cm-1, ~1440 cm-1 and ~1300 cm-1. Axons demyelination, loss of lipid structural order and the proliferation and aggregation of branched proteoglycans are related to the observed spectral modifications. Furthermore, the grey and white matter components of the spinal cord sections could also be spectrally distinguished, based on the relative intensity of characteristic lipid and protein bands. Raman spectra acquired from the white matter regions of the SOD1G93A mice closely resembles those from control mice.

Polyphosphonate ligands: From synthesis to design of hybrid PEGylated nanoparticles toward phototherapy studies.

The use of phosphonate ligands to modify the nanoparticle (NPs) surface has attracted a strong interest in the last years for the design of highly functional hybrid materials. Here, we applied a methodology to synthesize bisphosphonates having functionalized PEG side chains with a specific length in order to design a novel class of hybrid nanomaterials composed by tetraphosphonate-complex-gold COOH-terminated PEG-coated NPs (Bis-PO-PEG-AuNPs). The synthetic approach consist in three steps: (1) Complexation between new phosphonate ligands (Bis PO) and tetrachloroauric acid (HAuCl4) to form gold clusters; (2) adsorption of COOH-terminated PEG molecules (PEG) onto Bis PO-Au complex; (3) reduction of metal ions in that vicinity, growth of gold particles and colloidal stabilization. The obtained snow-shape-like hybrid nanoparticles, have been characterized by ultra-violet/visible, Raman spectroscopies, and electron microscopy imaging, involving their optical properties and photothermal activity in pancreatic adenocarcinoma cancer cells (PDAC).

Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination.

Both surface photovoltage and photocurrent enable to assess the effect of visible light illumination on the electrical behavior of a solar cell. We report on photovoltage and photocurrent measurements with nanometer scale resolution performed on the cross section of an epitaxial crystalline silicon solar cell, using respectively Kelvin probe force microscopy and conducting probe atomic force microscopy. Even though two different setups are used, the scans were performed on locations within 100-µm distance in order to compare data from the same area and provide a consistent interpretation. In both measurements, modifications under illumination are observed in accordance with the theory of PIN junctions. Moreover, an unintentional doping during the deposition of the epitaxial silicon intrinsic layer in the solar cell is suggested from the comparison between photovoltage and photocurrent measurements.

In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates.

Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.

Billion-fold increase in tip-enhanced Raman signal.

A billion-fold increase in the Raman signal over conventional tip-enhanced Raman spectroscopy/microscopy (TERS) is reported. It is achieved by introducing a stimulating beam confocal with the pump beam into a conventional TERS setup. A stimulated TERS spectrum, closely corresponding to its spontaneous TERS counterpart, is obtained by plotting the signal intensity of the strongest Raman peak of an azobenzene thiol self-assembled monolayer versus the stimulating laser frequency. The stimulated TERS image of azobenzene thiol molecules grafted onto Au ⟨111⟩ clearly shows the surface distribution of the molecules, whereas, when compared to the simultaneously recorded surface topography, it presents an image contrast of different nature. The experimentally obtained stimulated gain is estimated at 1.0 × 10(9), which is in reasonable agreement with the theoretically predicted value. In addition to the signal increase, the signal-to-noise ratio was 3 orders of magnitude higher than in conventional spontaneous TERS. The proposed stimulated TERS technique offers the possibility for a substantially faster imaging of the surface with respect to normal TERS.

Exchange of methyl- and azobenzene-terminated alkanethiols on polycrystalline gold studied by tip-enhanced Raman mapping.

Mixed thiol self-assembled monolayers (SAMs) presenting methyl and azobenzene head groups were prepared by chemical substitution from the original single-component n-decanethiol or [4-(phenylazo)phenoxy]hexane-1-thiol SAMs on polycrystalline gold substrates. Static contact-angle measurements were carried out to confirm a change in the hydrophobicity of the functionalized surfaces following the exchange reaction. The mixed SAMs presented contact-angle values between those of the more hydrophobic n-decanethiol and the more hydrophilic [4-(phenylazo)phenoxy]hexane-1-thiol single-component SAMs. By means of tip-enhanced Raman spectroscopy (TERS) mapping experiments, it was possible to highlight that molecular replacement takes place easily and first at grain boundaries: for two different mixed SAM compositions, TERS point-by-point maps with <50 nm step sizes showed different spectral signatures in correspondence to the grain boundaries. An example of the substitution extending beyond grain boundaries and affecting flat areas of the gold surface is also shown.

Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires.

Silicon nanowires (SiNWs) grown on low-cost substrates provide an ideal framework for the monolithic fabrication of radial junction photovoltaics. However, the quality of junction formation over a random matrix of SiNWs, fabricated via a vapor-liquid-solid (VLS) mechanism, has never been assessed in a realistic context. To address this, we probe the current response of individual radial junction solar cells under electron-beam and optical-beam excitations. Excellent current generation from the radial junction units, compared to their planar counterparts, has been recorded, indicating a high junction quality and effective doping in the ultra-thin SiNWs with diameters thinner than 20 nm. Interestingly, we found that the formation of radial junctions by plasma deposition can be quite robust against geometrical disorder and even the crossings of neighboring cell units. These results provide a strong support to the feasibility of building high-quality radial junction solar cells over high-throughput VLS-grown SiNWs on low-cost substrates.

Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

Probing the metal-to-ligand charge transfer first excited state in (η6-naphthalene)Cr(CO)3 and (η6-phenanthrene)Cr(CO)3 by resonance Raman spectroscopy and density functional theory calculations.

The nature of the lowest energy optical transition for the complexes (η(6)-naphthalene)Cr(CO)(3) and (η(6)-phenanthrene)Cr(CO)(3) in the solid state has been investigated by Raman spectroscopy using a range of different excitation wavelengths progressively approaching the resonant condition. Examination of the resonantly enhanced Raman modes confirms that the first absorption is attributed predominantly to a metal-to-arene charge transfer transition for both complexes. A notable difference in the photochemistry of the two complexes was observed. In the case of the phenanthrene complex, population of the lowest energy excited state leads to a photochemical process which resulted in the loss of the arene ligand and formation of Cr(CO)(6).

Molecular arrangement in self-assembled azobenzene-containing thiol monolayers at the individual domain level studied through polarized near-field Raman spectroscopy.

6-[4-(phenylazo)phenoxy]hexane-1-thiol self-assembled monolayers deposited on a gold surface form domain-like structures possessing a high degree of order with virtually all the molecules being identically oriented with respect to the surface plane. We show that, by using polarized near-field Raman spectroscopy, it is possible to derive the Raman scattering tensor of the ordered layer and consequently, the in-plane molecular orientation at the individual domain level. More generally, this study extends the application domain of the near-field Raman scattering selection rules from crystals to ordered organic structures.

An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.

Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO(2) substrates.

We here propose an all-in situ method for growing vapor-liquid-solid (VLS) silicon nanowires (SiNWs) directly on SnO(2) substrates in a plasma-enhanced chemical vapor deposition system. The tin catalysts are formed by a well-controlled H(2) plasma treatment of the SnO(2) layer. The lowest temperature for the tin-catalyzed VLS SiNWs growth in a silane plasma is ∼250 °C. The effects of substrate temperature and H(2) dilution of silane on the morphology and compositional evolution of the SiNWs were systematically investigated. The catalyst content in the SiNWs can be effectively controlled by the deposition temperature. Moreover, enhanced absorption (down to ∼1.1 eV) is achieved due to the strong light trapping and anti-reflection effects in the straight and long tapered SiNWs.

Polarization properties of oblique incidence scanning tunneling microscopy-tip-enhanced Raman spectroscopy.

We used scanning tunneling microscopy-tip-enhanced Raman spectroscopy (STM-TERS) to study the polarization properties of near-field scattering on a crystalline material as well as on a dye adsorbate. The measurements on a (111)-oriented c-Si sample were found to be well described by a recently proposed model for TERS and allowed for a characterization of the polarization properties of the tips used. The tip enhancement was stronger for excitation radiation having a field component along the tip axis for both types of samples. A non-negligible enhancement was also found for the field component perpendicular to the tip axis.

Nanoscale probing of adsorbed species by tip-enhanced Raman spectroscopy.

Tip-enhanced Raman spectroscopy (TERS) is based on the optical excitation of localized surface plasmons in the tip-substrate cavity, which provides a large but local field enhancement near the tip apex. We report on TERS with smooth single crystalline surfaces as substrates. The adsorbates were CN- ions at Au(111) and malachite green isothiocyanate (MGITC) molecules at Au(111) and Pt(110) using either Au or Ir tips. The data analysis yields Raman enhancements of about 4 x 10(5) for CN- and up to 10(6) for MGITC at Au(111) with a Au tip, probing an area of less than 100 nm radius.