RESUMO
Coherent x-ray diffraction experiments have been used to probe the dynamics of the charge density wave (CDW) in the quasi-1D system NbSe(3). The 2k(F) satellite reflection associated with the CDW has been measured with respect to external dc currents, below and above the depinning current. These measurements illustrate for the first time the extensive behavior of a moving electronic crystal: the creep regime, with nucleation of CDW dislocations, the flow regime, with motional ordering, along with phase slippage and the role of strong pinning due to an extrinsic defect.
RESUMO
We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints.