The dual nature of metal halide perovskites.

Metal halide perovskites have brought about a disruptive shift in the field of third-generation photovoltaics. Their potential as remarkably efficient solar cell absorbers was first demonstrated in the beginning of the 2010s. However, right from their inception, persistent challenges have impeded the smooth adoption of this technology in the industry. These challenges encompass issues such as the lack of reproducibility in fabrication, limited mid- and long-term stability, and concerns over toxicity. Despite achieving record efficiencies that have outperformed even well-established technologies, such as polycrystalline silicon, these hurdles have hindered the seamless transition of this technology into industrial applications. In this Perspective, we discuss which of these challenges are rooted in the unique dual nature of metal halide perovskites, which simultaneously function as electronic and ionic semiconductors. This duality results in the intermingling of processes occurring at vastly different timescales, still complicating both their comprehensive investigation and the development of robust and dependable devices. Our discussion here undertakes a critical analysis of the field, addressing the current status of knowledge for devices based on halide perovskites in view of electronic and ionic conduction, the underlying models, and the challenges encountered when these devices are optoelectronically characterized. We place a distinct emphasis on the positive contributions that this area of research has not only made to the advancement of photovoltaics but also to the broader progress of solid-state physics and photoelectrochemistry.

Impact of dynamic co-evaporation schemes on the growth of methylammonium lead iodide absorbers for inverted solar cells.

A variety of different synthesis methods for the fabrication of solar cell absorbers based on the lead halide perovskite methylammonium lead iodide (MAPbI3, MAPI) have been successfully developed in the past. In this work, we elaborate upon vacuum-based dual source co-evaporation as an industrially attractive processing technology. We present non-stationary processing schemes and concentrate on details of co-evaporation schemes where we intentionally delay the start/end points of one of the two evaporated components (MAI and PbI2). Previously, it was found for solar cells based on a regular n-i-p structure, that the pre-evaporation of PbI[Formula: see text] is highly beneficial for absorber growth and solar cell performance. Here, we apply similar non-stationary processing schemes with pre/post-deposition sequences for the growth of MAPI absorbers in an inverted p-i-n solar cell architecture. Solar cell parameters as well as details of the absorber growth are compared for a set of different evaporation schemes. Contrary to our preliminary assumptions, we find the pre-evaporation of PbI2 to be detrimental in the inverted configuration, indicating that the beneficial effect of the seed layers originates from interface properties related to improved charge carrier transport and extraction across this interface rather than being related to an improved absorber growth. This is further evidenced by a performance improvement of inverted solar cell devices with pre-evaporated MAI and post-deposited PbI2 layers. Finally, we provide two hypothetical electronic models that might cause the observed effects.

Importance of methylammonium iodide partial pressure and evaporation onset for the growth of co-evaporated methylammonium lead iodide absorbers.

Vacuum-based co-evaporation promises to bring perovskite solar cells to larger scales, but details of the film formation from the physical vapor phase are still underexplored. In this work, we investigate the growth of methylammonium lead iodide (MAPbI[Formula: see text]) absorbers prepared by co-evaporation of methylammonium iodide (MAI) and lead iodide (PbI[Formula: see text]) using an in situ X-ray diffraction setup. This setup allows us to characterize crystallization and phase evolution of the growing thin film. The total chamber pressure strongly increases during MAI evaporation. We therefore assume the total chamber pressure to be mainly built up by an MAI atmosphere during deposition and use it to control the MAI evaporation. At first, we optimize the MAI to PbI[Formula: see text] impingement ratios by varying the MAI pressure at a constant PbI[Formula: see text] flux rate. We find a strong dependence of the solar cell device performance on the chamber pressure achieving efficiencies > 14[Formula: see text] in a simple n-i-p structure. On the road to further optimizing the processing conditions we vary the onset time of the PbI[Formula: see text] and MAI deposition by delaying the start of the MAI evaporation by t = 0/8/16 min. This way, PbI[Formula: see text] nucleates as a seed layer with a thickness of up to approximately 20 nm during this initial stage. Device performance benefits from these PbI[Formula: see text] seed layers, which also induce strong preferential thin film orientation as evidenced by grazing incidence wide angle X-ray scattering (GIWAXS) measurements. Our insights into the growth of MAPbI[Formula: see text] thin films from the physical vapor phase help to understand the film formation mechanisms and contribute to the further development of MAPbI[Formula: see text] and related perovskite absorbers.

Transition-Metal Oxides for Kesterite Solar Cells Developed on Transparent Substrates.

Fabrication on transparent soda-lime glass/fluorine-doped tin oxide (FTO) substrates opens the way to advanced applications for kesterite solar cells such as semitransparent, bifacial, and tandem devices, which are key to the future of the PV market. However, the complex behavior of the p-kesterite/n-FTO back-interface potentially limits the power conversion efficiency of such devices. Overcoming this issue requires careful interface engineering. This work empirically explores the use of transition-metal oxides (TMOs) and Mo-based nanolayers to improve the back-interface of Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4 solar cells fabricated on transparent glass/FTO substrates. Although the use of TMOs alone is found to be highly detrimental to the devices inducing complex current-blocking behaviors, the use of Mo:Na nanolayers and their combination with n-type TMOs TiO2 and V2O5 are shown to be a very promising strategy to improve the limited performance of kesterite devices fabricated on transparent substrates. The optoelectronic, morphological, structural, and in-depth compositional characterization performed on the devices suggests that the improvements observed are related to a combination of shunt insulation and recombination reduction. This way, record efficiencies of 6.1, 6.2, and 7.9% are obtained for Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4 devices, respectively, giving proof of the potential of TMOs for the development of kesterite solar cells on transparent substrates.

Crystal Phases and Thermal Stability of Co-evaporated CsPbX3 (X = I, Br) Thin Films.

We present the growth, phase transitions, and thermal decomposition of CsPbX3 (X = I, Br) thin films monitored by in situ X-ray diffraction (XRD). The perovskite films are prepared in vacuum via co-evaporation of PbX2 and CsX (X = I, Br) onto glass substrates. In situ X-ray diffraction allows the observation of phase transitions and decomposition while the samples are heated with a linear temperature ramp. Our experiments reveal the decomposition route for the CsPbX3 perovskites in high vacuum, with a much higher stability than their hybrid organic-inorganic MAPbX3 counterparts. We also observe the response of a black CsPbI3 thin film to exposure to ambient air at room temperature using the same XRD system. Exposing the black CsPbI3 to ambient air leads to the formation of yellow orthorhombic δ-CsPbI3, whose crystal structure could be identified by its X-ray diffraction pattern. Additionally, the linear coefficients of expansion are determined for δ-CsPbI3 and the (020)-orientation of CsPbBr3.

Resonant Raman scattering based approaches for the quantitative assessment of nanometric ZnMgO layers in high efficiency chalcogenide solar cells.

This work reports a detailed resonant Raman scattering analysis of ZnMgO solid solution nanometric layers that are being developed for high efficiency chalcogenide solar cells. This includes layers with thicknesses below 100 nm and compositions corresponding to Zn/(Zn + Mg) content rations in the range between 0% and 30%. The vibrational characterization of the layers grown with different compositions and thicknesses has allowed deepening in the knowledge of the sensitivity of the different Raman spectral features on the characteristics of the layers, corroborating the viability of resonant Raman scattering based techniques for their non-destructive quantitative assessment. This has included a deeper analysis of different experimental approaches for the quantitative assessment of the layer thickness, based on (a) the analysis of the intensity of the ZnMgO main Raman peak; (b) the evaluation of the changes of the intensity of the main Raman peak from the subjacent layer located below the ZnMgO one; and (c) the study of the changes in the relative intensity of the first to second/third order ZnMgO peaks. In all these cases, the implications related to the presence of quantum confinement effects in the nanocrystalline layers grown with different thicknesses have been discussed and evaluated.

Advanced Raman Spectroscopy of Methylammonium Lead Iodide: Development of a Non-destructive Characterisation Methodology.

In recent years, there has been an impressively fast technological progress in the development of highly efficient lead halide perovskite solar cells. However, the stability of perovskite films and respective solar cells is still an open point of concern and calls for advanced characterization methods. In this work, we identify appropriate measurement conditions for a meaningful analysis of spin-coated absorber-grade perovskite thin films based on methylammonium (MA) lead iodide (MAPbI3) by Raman spectroscopy. The material under investigation and its derivates is the most commonly used for high efficiency devices in the literatures and has yielded working solar cell devices with efficiencies around 10% in our laboratory. We report highly detailed Raman spectra obtained with excitation at 532 nm and 633 nm and their deconvolution taking advantage of the simultaneous fitting of spectra obtained with varying excitation wavelengths. Finally, we propose a fast and contactless methodology based on Raman to probe composition variations and/or degradation of these perovskite thin films and discuss the potential of the presented technique as quality control and degradation monitoring tool in other organic-inorganic perovskite materials and complete solar cell devices.

Structure reinvestigation of α-, ß- and γ-In2S3.

Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this material with an in situ X-ray diffraction study as a function of temperature using monochromatic synchrotron radiation. For the purpose of this study, high quality polycrystalline In2S3 material with nominally stoichiometric composition was synthesized at high temperatures. We found three modifications of In2S3 in the temperature range between 300 and 1300 K, with structural phase transitions at temperatures of 717 K and above 1049 K. By Rietveld refinement we extracted the crystal structure data and the temperature coefficients of the lattice constants for all three phases, including a high-temperature trigonal γ-In2S3 modification.

Monitoring the Phase Formation of Coevaporated Lead Halide Perovskite Thin Films by in Situ X-ray Diffraction.

Perovskite solar cells based on (CH3NH3)Pb(I,Cl)3 have recently demonstrated rapidly increasing cell efficiencies. Here, we show progress identifying phases present during the growth of (CH3NH3)Pb(I,Cl)3 perovskite thin films with the vacuum-based coevaporation approach using two sources under varying deposition conditions. With in situ X-ray diffraction, crystalline phases can be identified and monitored in real time. For different (CH3NH3)I-to-PbCl2 flux ratios, two distinct (CH3NH3)Pb(IxCl(1-x))3 phases with high (x > 0.95) and with lower (x < 0.5) iodine content as well as a broad miscibility gap in-between were found. During post deposition annealing we observe recrystallization and preferential orientation effects and finally the decomposition of the perovskite film to PbI2 at temperatures above 200 °C.

Extended soft X-ray emission spectroscopy: quantitative assessment of emission intensities.

Soft X-ray emission spectroscopy (SXES) in the energy range between 150 eV and 1500 eV has typical attenuation lengths between tens and a few hundred nanometres. In this work the transmission of soft X-rays in synchrotron-based SXES has been quantitatively analysed using specially prepared layer samples. The possibility of extending the standard qualitative analysis of SXES by exploiting the information underlying the emission intensity was examined for thin layer structures. Three different experiment series were accomplished with model layer systems based on different sulfur-containing substrates: (i) MoS(2), (ii) CuInS(2), (iii) Cu(In,Ga)(S,Se)(2). The absorption of the S L(2,3) emission line by ZnO cover layers of up to 80 nm thickness was monitored and compared with theoretical expectations. By comparison with a reference intensity recorded from a bare substrate, the attenuation of the S L(2,3) emission could be used to accurately determine the ZnO overlayer thickness up to a critical thickness, depending on the set-up and the net S L(2,3) emission intensity. The results from these local energy-resolved spot measurements were compared with spatially resolved scans of the integral S L(2,3) emission intensity over areas of several mm(2). In the scan images the attenuation of the S L(2,3) emission intensity clearly reflects the local ZnO layer thickness. From the attenuation the ZnO layer thicknesses were calculated and compared with ellipsometric measurements and were found to be in excellent agreement. These results demonstrate the benefits of a quantitative analysis of SXES, making it an even more powerful tool for examining buried interfaces and for monitoring lateral inhomogeneities.