Two new polymorphs of cis-perinone: crystal structures, physical and electric properties.

The crystal structures of two polymorphs of cis-perinone (bisbenzimidazo[2,1-b:1',2'-j]benzo[lmn][3,8]phenanthroline-6,9-dione, Pigment Red 194) were solved from single crystals obtained solvothermally from 1,2-dichlorobenzene or n-butanol at 220°C. Both crystal structures (space group P21/c) derive from stacking of flat molecules arranged due to π-π interaction. The melting points of these two polymorphs are 471°C and 468°C and their respective optical bandgaps are 1.94 eV and 1.71 eV. One of the polymorphs demonstrates drift and hopping mechanisms of electric conductivity, whereas the other one is dominated by the drift conductivity. The direct current (DC) electric conductivity of the samples are 4.77 × 10-13 S m-1 and 6.84 × 10-10 S m-1 at room temperature. The significant difference in DC conductivities can be explained by the dependence of the mobility and concentration of charge carriers on the structure of the samples.

High frequency hysteresis-free switching in thin layers of smectic-C* ferroelectric liquid crystals.

The insulating layers used for the alignment of ferroelectric liquid crystals (FLC) in electro-optical cells usually have non-negligible thickness and their capacitance determines the type of the director switching caused by a triangular-form external voltage U(tr) . With decreasing frequency of U(tr) , the hysteresis in a switching direction changes from the normal to the abnormal one at a characteristic hysteresis inversion frequency f(i) . In the vicinity of f(i) , the electro-optical response is thresholdless and the optical transmission manifests the V -shape field dependence. The V -shape regime is very interesting for certain applications, in particular to microdisplays due to a possibility of the gray scale realization. However, f(i) has to be enhanced from the usually observed frequency of a few Hz up to the range of hundreds of Hz. To this effect, a special FLC material has been designed and its basic properties (tilt angle, spontaneous polarization, rotational viscosity, and electric conductivity) have been measured over the entire range of the smectic-C* phase. Upon variation of cell parameters (thickness of both the FLC and alignment layers), temperature, and external voltage, the frequency of the V -shape effect as high as 150-1000 Hz (in the temperature range 30-75 degrees C) has been found experimentally. The operating voltage remains lower than 8 V. A quantitative interpretation of these results has been done using the modeling procedure developed earlier [S.P. Palto, Cryst. Rep. 48, 124 (2003)]. The modeling has been performed with the experimental values of the FLC material and the cell parameters and has shown very good agreement with experiment. The key point of this approach is consideration of the internal voltage on the FLC layer, the sign, amplitude, and form of which differ from U(tr) . The results of the modeling allow further improvement of the performance of electro-optical FLC cells for high frequency V-shape effect.

"Thresholdless" hysteresis-free switching as an apparent phenomenon of surface stabilized ferroelectric liquid crystal cells.

The thresholdless, hysteresis-free V-shape electro-optical switching in surface-stabilized ferroelectric liquid crystals, observed usually with a triangular voltage form, has been shown to be rather an apparent and not a real effect. Strictly speaking, it is observed only at one characteristic frequency f(i) and is accompanied by an inversion of the electro-optical hysteresis direction from the normal to the abnormal one. The switching of the director in a liquid crystal layer at f(i), in reality, has a threshold and a normal hysteresis. Even the optical transmittance shows a hysteresis at f(i) when it is plotted as a function of the voltage on the liquid crystal layer and not as a function of the total voltage on the liquid crystal cell which always includes the inner insulating layers. Due to these layers, a voltage divider is formed which includes the capacitance of the insulating layers and the dynamic impedance (capacitance and resistance) of the ferroelectric liquid crystal layer. The new explanation has been confirmed by experiments with different ferroelectric liquid crystal cells combined with external resistors and capacitors and by measurements of a strong dependence of f(i) on the liquid crystal resistance which was varied over three orders of magnitude. A theoretical analysis of the problem has also been made using certain approximations for material parameters and the space dependence of the sine form of the electric field in the liquid crystal layer. The conclusions are qualitatively consistent with the experimental results. Finally, the dynamic problem has been solved numerically by taking into account of all the relevant parameters (in the absence of flow and irregularities in the cell plane) and the obtained results are in excellent correspondence with the experiment. This has been demonstrated for sets of material and cell parameters providing the best V-shape performance.