RESUMO
Magnetization reversal processes have been analyzed by Magnetic Force Microscopy in dense arrays of Co bars with well defined shape anisotropy and strong magnetostatic interactions. Two different geometries have been used: rectangular and rhombic so that the sign of dipolar interactions between adjacent chains of bars is changed from antiferromagnetic (rectangular array) to ferromagnetic (rhombic array), having a profound influence on the shape of a nucleus of inversion at the magnetization reversal.
RESUMO
Spin-dependent transport is considered in double magnetic tunnel junctions of two types F-I-F-I-F and F-I-N-I-F with thin insulating (I) barriers between the ferromagnetic (F) or non-magnetic (N) electrodes. Using the Landauer formalism within single-band tight-binding dynamics for atomically perfect epitaxial multilayers, the dependencies of tunnel magnetoresistance (TMR) on the on-site atomic energies epsilonI or epsilonN and number nI of atomic planes in the respective layers are obtained. It is found that the maximum TMR corresponds to the "shallow band" regime with respect to epsilonN and a series of peaks appears with respect to nI, essentially enhancing the performance of a simple F-I-F junction. These results suggest the material and structural choices for optimum TMR devices of advanced compositions.