Cubic Nonlinearity of Graphene-Oxide Monolayer.

The cubic nonlinearity of a graphene-oxide monolayer was characterized through open and closed z-scan experiments, using a nano-second laser operating at a 10 Hz repetition rate and featuring a Gaussian spatial beam profile. The open z-scan revealed a reverse saturable absorption, indicating a positive nonlinear absorption coefficient, while the closed z-scan displayed valley-peak traces, indicative of positive nonlinear refraction. This observation suggests that, under the given excitation wavelength, a two-photon or two-step excitation process occurs due to the increased absorption in both the lower visible and upper UV wavelength regions. This finding implies that graphene oxide exhibits a higher excited-state absorption cross-section compared to its ground state. The resulting nonlinear absorption and nonlinear refraction coefficients were estimated to be approximately ~2.62 × 10-8 m/W and 3.9 × 10-15 m2/W, respectively. Additionally, this study sheds light on the interplay between nonlinear absorption and nonlinear refraction traces, providing valuable insights into the material's optical properties.

Carrier transport dynamics in Mn-doped CdSe quantum dot sensitized solar cells.

In this work quantum dot sensitized solar cells (QDSSCs) were fabricated with CdSe and Mn-doped CdSe quantum dots (QDs) using the SILAR method. QDSSCs based on Mn-doped CdSe QDs exhibited improved incident photon-to-electron conversion efficiency. Carrier transport dynamics in the QDSSCs were studied using the intensity modulated photocurrent/photovoltage spectroscopy technique, from which transport and recombination time constants could be derived. Compared to CdSe QDSSCs, Mn-CdSe QDSSCs exhibited shorter transport time constant, longer recombination time constant, longer diffusion length, and higher charge collection efficiency. These observations suggested that Mn doping in CdSe QDs could benefit the performance of solar cells based on such nanostructures.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires.

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. This work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

Large enhancement in photocurrent by Mn doping in CdSe/ZTO quantum dot sensitized solar cells.

We find a large enhancement in the efficiency of CdSe quantum dot sensitized solar cells by doping with manganese. In the presence of Mn impurities in relatively small concentrations (2.3%) the photoelectric current increases by up to 190%. The average photocurrent enhancement is about 160%. This effect cannot be explained by a light absorption mechanism because the experimental and theoretical absorption spectra demonstrate that there is no change in the absorption coefficient in the presence of the Mn impurities. To explain such a large increase in the injection current we propose a tunneling mechanism of electron injection from the quantum dot LUMO state to the Zn2SnO4 (ZTO) semiconductor photoanode. The calculated enhancement is approximately equal to 150% which is very close to the experimental average value of 160%. The relative discrepancy between the calculated and experimentally measured ratios of the IPCE currents is only 6.25%. For other mechanisms (such as electron trapping, etc.) the remaining 6.25% cannot explain the large change in the experimental IPCE. Thus we have indirectly proved that electron tunneling is the major mechanism of photocurrent enhancement. This work proposes a new approach for a significant improvement in the efficiency of quantum dot sensitized solar cells.

Passivation effects on quantum dots prepared by successive ionic layer adsorption and reaction.

ZnS is typically used to passivate semiconductor quantum dots (QDs) prepared by the successive ionic layer adsorption and reaction (SILAR) method for solar cell applications, while for colloidal QDs, organic ligands are usually used for this passivation purpose. In this study we utilized oleylamine and oleic acid ligands, besides ZnS, to passivate QDs prepared by the SILAR approach, and investigated their effects on the incident photon-to-current efficiency (IPCE) performance of the solar cells. It was observed that oleylamine passivation decreased device performance, while oleic acid passivation improved the IPCE of the cells. Redshift of the IPCE onset wavelength was also observed after oleic acid coating, which was attributed to the delocalization of excitons in the CdS QDs.

Influence of Quantum Dot Concentration on Carrier Transport in ZnO:TiO2 Nano-Hybrid Photoanodes for Quantum Dot-Sensitized Solar Cells.

Zinc oxide nanowire and titanium dioxide nanoparticle (ZnO:TiO2 NW/NP) hybrid films were utilized as the photoanode layer in quantum dot-sensitized solar cells (QDSSCs). CdSe quantum dots (QDs) with a ZnS passivation layer were deposited on the ZnO:TiO2 NW/NP layer as a photosensitizer by successive ion layer adsorption and reaction (SILAR). Cells were fabricated using a solid-state polymer electrolyte and intensity-modulated photovoltage and photocurrent spectroscopy (IMVS/PS) was carried out to study the electron transport properties of the cell. Increasing the SILAR coating number enhanced the total charge collection efficiency of the cell. The electron transport time constant and diffusion length were found to decrease as more QD layers were added.