A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors.

In this paper, we demonstrate a comprehensive study of NF3-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic etching process consisting of an oxidation treatment step and an etching step is proposed and used for SiGe selective etching. The cyclic etching process exhibits a slower etching rate and higher etching selectivity compared to the direct etching process. The cycle etching process consisting of Recipe 1, which has a SiGe etching rate of 0.98 nm/cycle, is used for the cavity etch. The process achieved good interlayer uniformity of cavity depth (cavity depth ≤ 5 ± 0.3 nm), while also obtaining a near-ideal rectangular SiGe etch front shape (inner spacer shape = 0.84) and little Si loss (0.44 nm@ each side). The cycle etching process consisting of Recipe 4 with extremely high etching selectivity is used for channel release. The process realizes the channel release of nanosheets with a multi-width from 30 nm to 80 nm with little Si loss. In addition, a selective isotropic etching process using NF3/O2/Ar gas mixture is used to etch back the SiN film. The impact of the O2/NF3 ratio on the etching selectivity of SiN to Si and the surface roughness of SiN after etching is investigated. With the introduction of O2 into NF3/Ar discharge, the selectivity increases sharply, but when the ratio of O2/NF3 is up to 1.0, the selectivity tends to a constant value and the surface roughness of SiN increases rapidly. The optimal parameter is O2/NF3 = 0.5, resulting in a selectivity of 5.4 and a roughness of 0.19 nm.

A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors.

In this paper, a novel scheme for source/drain-first (S/D-first) full bottom dielectric isolation (BDI), i.e., Full BDI_Last, with integration of a sacrificial Si0.5Ge0.5 layer was proposed and demonstrated in a stacked Si nanosheet gate-all-around (NS-GAA) device structure using TCAD simulations. The proposed full BDI scheme flow is compatible with the main process flow of NS-GAA transistor fabrication and provides a large window for process fluctuations, such as the thickness of the S/D recess. It is an ingenious solution to insert the dielectric material under the source, drain and gate regions to remove the parasitic channel. Moreover, because the S/D-first scheme decreases the problem of high-quality S/D epitaxy, the innovative fabrication scheme introduces full BDI formation after S/D epitaxy to mitigate the difficulty of providing stress engineering in the full BDI formation before S/D epitaxy (Full BDI_First). The electrical performance of Full BDI_Last is demonstrated by a 4.78-fold increase in the drive current compared to Full BDI_First. Furthermore, compared to traditional punch through stoppers (PTSs), the proposed Full BDI_Last technology could potentially provide an improved short channel behavior and good immunity against parasitic gate capacitance in NS-GAA devices. For the assessed inverter ring oscillator (RO), applying the Full BDI_Last scheme allows the operating speed to be increased by 15.2% and 6.2% at the same power, or alternatively enables an 18.9% and 6.8% lower power consumption at the same speed compared with the PTS and Full BDI_First schemes, respectively. The observations confirm that the novel Full BDI_Last scheme incorporated into an NS-GAA device can be utilized to enable superior characteristics to benefit the performance of integrated circuits.

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation.

The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated. The stress of the nanosheets in the stacking direction increased first and then decreased during the process of channel release by technology computer-aided design (TCAD) simulation. The finite element simulation showed that the stress caused serious deformation of the nanosheets, which was also confirmed by the experiment. This study proposed a novel channel release process that utilized multi-step etching to remove the sacrificial SiGe layers instead of conventional single-step etching. By gradually releasing the stress of the SiGe layer on the nanosheets, the stress difference in the stacking direction before and after the last step of etching was significantly reduced, thus achieving equally spaced stacked nanosheets. In addition, the plasma-free oxidation treatment was introduced in the multi-step etching process to realize an outstanding selectivity of 168:1 for Si0.7Ge0.3 versus Si. The proposed novel process could realize the channel release of nanosheets with a multi-width from 30 nm to 80 nm with little Si loss, unlocking the full potential of gate-all-around (GAA) technology for digital, analog, and radio-frequency (RF) circuit applications.

The influence of local pain on balance control in patients with chronic ankle instability.

BACKGROUND: Local pain around the ankle joint is a common symptom in patients with chronic ankle instability (CAI). However, whether the local pain would impose any influence on the balance control performance of CAI patients is still unknown. METHODS: A total of twenty-six subjects were recruited and divided into the following two groups: pain-free CAI (group A) and pain-present CAI (group B). Subjects in both groups received two independent tests: the star excursion balance test and the single-leg stance test, in order to reflect their balance control ability more accurately. RESULTS: Compared with group A, the group B showed significantly more episodes of the history of sprains, decreased ankle maximum plantarflexion angle, and lower Cumberland scores (all p < 0.05). In the star excursion balance test, group B demonstrated a significantly reduced anterior reach distance than group A (p < 0.05). During the single leg stance test, group B showed a significant increase in the magnitude of electromyographic signals both in peroneus longus and soleus muscles than group A (each p < 0.05). Additionally, group B had a significantly more anterolaterally positioned plantar center of pressure than group A (p < 0.05). CONCLUSION: CAI patients with local pain around the ankle joint had more episodes of sprains and lower functional scores when compared to those without pain. The balance control performance was also worse in the pain-present CAI patients than those without pain.

Integration of reginal shear measurements at the foot-ground interface during routine balance assessment of the elderly population.

BACKGROUND: Force-plate posturography offers a convenient way for quantitative assessment of postural stability in the elderly. However, studies focusing on routine balance assessment have usually not taken reginal shear distributions (i.e., arising from horizontal forces) into consideration. RESEARCH QUESTION: (1) Does plantar shear distribution differ between young and elderly subjects during upright standing? (2) How do the maximum plantar shear forces vary at different regions of the foot? METHODS: The new reginal shear measurement (RSM) method can simultaneously capture the three-dimensional force distributions at regional plantar sites while subjects maintaining standing balance. The feasibility of the proposed method in characterizing the magnitude and distribution of plantar shear forces was tested in thirty-two normal young and nineteen elderly subjects. Statistical analysis was performed using the independent samples t-test for both the continuous and ordinal variables. RESULTS: For regional AP shear forces, statistically significant differences were found between the two groups for the toe region of the right foot and the midfoot of both feet. For ML shear distributions, statistically significant differences were found at nearly all plantar sites expect for the hallux and lateral metatarsal. The maximum increase in ML shear forces occurred in the toe region of the right foot, where the peak shear values were 113.16% higher than those of the young subjects. The peak ML shear occurred in the midfoot were averagely 83.19% and 70.57% higher in the elderly's left and right feet, respectively. SIGNIFICANCE: The RSM method may offer unique solutions to identify functional decline in postural control of the elderly. The plantar shear pattern has potential to become an important parameter in evaluating one's balance performance during upright standing.