RESUMO
It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface. More interesting, the coupling ways between the QC effect and the CS effect determinate the levels position of localized states in band gap and manipulate emission wavelength, where a few new phenomena were explored.
RESUMO
In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.
RESUMO
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.
RESUMO
It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocrystals almost occur in sphere shape on smaller nanocrystals with less irradiation time of electron beam. In the process, it was investigated that condensed structures of silicon nanocrystals are changed with different impurity atoms in silicon film, in which localized states emission was observed. Through electron beam irradiation for 15 min on amorphous Si film doped with oxygen impurity atoms by PLD process, enhanced photoluminescence emission peaks are observed in visible light. And electroluminescence emission is manipulated into the optical communication window on the bigger Si-Yb-Er nanocrystals after irradiation of electron beam for 30 min.
