RESUMO
By mapping the low-energy electronic dynamics using angle resolved photoemission spectroscopy (ARPES), we have shed light on essential electronic characteristics of the (3 × 3) silicene phase on Ag(111) surfaces. In particular, our results show a silicene-derived band with a clear gap and linear energy-momentum dispersion near the Fermi level at the Γ symmetry point of the (3 × 3) phase at several distinctive Brillouin zones. Moreover, we have confirmed that the large buckling of ~0.7 Å of this silicene structure induces the opening of a gap close to the Fermi level higher than at least 0.3 eV, in agreement with recent reported photoemission results. The two-dimensional character of the charge carriers has also been revealed by the photon energy invariance of the gapped silicene band, suggesting a limited silicene-silver hybridization, in disagreement with recent density-functional theory (DFT) predictions.
Assuntos
Silício/química , Prata/química , Temperatura Baixa , Modelos Químicos , Espectroscopia Fotoeletrônica , Propriedades de SuperfícieRESUMO
Densely packed epitaxial Mn-doped Si(0.3)Ge(0.7) nanodots self-assembled on Si(100) have been obtained. Their structural properties were studied using reflection high-energy electron diffraction, energy dispersive x-ray diffraction, atomic force microscopy, extended x-ray absorption fine structure measurements and high-resolution transmission electron microscopy. Mn(5)Ge(1)Si(2) crystallites embedded in Si(0.3)Ge(0.7) were found. They exhibit a ferromagnetic behaviour with a Curie temperature of about 225 K.
