RESUMO
Perovskite solar cells (PSCs) based on a planar structure have recently become more attractive due to their simple manufacturing process and relatively low cost, while most perovskite solar cells employ highly porous TiO2 as an electron transport layer in mesoporous devices offering higher energy conversion efficiency (PCE). In planar structural devices, non-radiative recombination effects of the absorber layer and the electron transport layer cause potential loss and lower PCE. We created an efficient electron transport layer by combining low-temperature Ni-doped SnO2 with SDBS as a surfactant (denoted as Ni:SnO2). Doping Ni+ into low-temperature solution-processed SnO2 increased the power conversion efficiency of PSCs from 17.8 to 19.7%.
RESUMO
A high-quality organolead trihalide perovskite film with large-sized crystalline grains and smooth surfaces is required to obtain efficient perovskite solar cells (PSCs). Herein, high-quality (FAPbI3)0.97(MAPbBr3)0.03 perovskite films were fabricated using trimesic acid (TMA) additives in a halide perovskite precursor solution to obtain efficient PSCs. The X-ray diffraction analysis and scanning electron microscopy of the films revealed that the TMA had a significant effect on the roughness of the films by acting as a surface link, thus reducing the surface defects and recombination at the grain boundaries. In addition, with the addition of the TMA additive, a smooth perovskite film with a flat surface and no pinholes was obtained. The perovskite film was used to fabricate a PSC device, and the device exhibited a high power conversion efficiency of 17.26%, which was higher than that of the control device (15.15%) under the same conditions. This study demonstrates a facile method to passivate defects on the perovskite layer via surface modification.