Thin-film lithium niobate electro-optic terahertz wave detector.

The design, fabrication, and validation of a thin-film lithium niobate on insulator (LNOI) electro-optic (EO) time-domain terahertz (THz) wave detector is reported. LNOI offers unprecedented properties for the EO detection of freely propagating THz wave radiation pulses and transient electric fields because of the large EO coefficient of the material, engineering of the velocity matching of the THz wave and optical wave, and much reduced detector size. The proof-of-concept device is realized using thin-film lithium niobate optical waveguides forming a Mach-Zehnder interferometer with interferometer arms electrically poled in opposite directions. THz waves are coupled effectively to the fully dielectric device from free space without using antennas or plasmonics. The detection of THz waves with frequencies up to 800 GHz is successfully demonstrated. The detector allows for the detection of THz frequency electric fields up to 4.6 MV/m. The observed frequency response of the device agrees well with theoretical predictions.

Thin film lithium niobate electric field sensors.

We present our results for using thin film lithium niobate devices for electric field sensing applications. Micro-ring modulator and Mach-Zehnder modulator-based electric field sensors are demonstrated. Micro-ring resonator sensors can be used for low frequency (up to several GHz) electric field sensing applications and achieve a high sensitivity of 80 mV/(m Hz1/2) with a very compact size of 300 µm, as limited by the intensity and phase noise of the used distributed feedback laser. A measurement bandwidth of 2.5 GHz is measured for these sensors and is limited by the detector bandwidth. Alternatively, Mach-Zehnder modulators allow for perfect phase matching between the radio frequency signals and optical signals, and they can be used for electric field sensing up to several THz. A sensitivity of 2.2 V/(m Hz1/2) was obtained using our Mach-Zehnder electric field sensor with an interaction length of 600 µm. The Mach-Zehnder sensor can sense electric fields with frequencies reaching 0.6 THz based on the calculated results.

High-performance and linear thin-film lithium niobate Mach-Zehnder modulators on silicon up to 50 GHz.

Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3 dBHz2/3 at 1 GHz and 92.6 dBHz2/3 at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics.

Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon.

Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~2 µm2. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon.

Thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge(23)Sb(7)S(70), to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 µm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10(5) quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.

Low-loss and high index-contrast tantalum pentoxide microring resonators and grating couplers on silicon substrates.

A platform for high index-contrast integrated photonics based on tantalum pentoxide submicrometer waveguides on silicon substrates is introduced. The platform allows demonstration of microring resonators with loaded quality factor, Q, of 67,000 and waveguides with a propagation loss of 4.9 dB/cm. Grating couplers, with an insertion loss of ~6 dB per coupler and 3 dB bandwidth of ~50 nm, are also demonstrated and integrated with microring resonators.

Heterogeneous lithium niobate photonics on silicon substrates.

A platform for the realization of tightly-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding and selective oxidation of refractory metals. The heterogeneous photonic platform is employed to demonstrate high-performance lithium niobate microring optical resonators and Mach-Zehnder optical modulators. A quality factor of ~7.2 × 104 is measured in the microresonators, and a half-wave voltage-length product of 4 V.cm and an extinction ratio of 20 dB is measured in the modulators.

Submicron optical waveguides and microring resonators fabricated by selective oxidation of tantalum.

Submicron tantalum pentoxide ridge and channel optical waveguides and microring resonators are demonstrated on silicon substrates by selective oxidation of the refractory metal, tantalum. The novel method eliminates the surface roughness problem normally introduced during dry etching of waveguide sidewalls and also simplifies fabrication of directional couplers. It is shown that the measured propagation loss is independent of the waveguide structure and thereby limited by the material loss of tantalum pentoxide in waveguides core regions. The achieved microring resonators have cross-sectional dimensions of ~600 nm × ~500 nm, diameters as small as 80 µm with a quality, Q, factor of 4.5 × 10(4), and a finesse of 120.