Tracking exceptional points above the lasing threshold.

Recent studies on exceptional points (EPs) in non-Hermitian optical systems have revealed unique traits, including unidirectional invisibility, chiral mode switching and laser self-termination. In systems featuring gain/loss components, EPs are commonly accessed below the lasing threshold, i.e., in the linear regime. In this work, we experimentally demonstrate that EP singularities in coupled semiconductor nanolasers can be accessed above the lasing threshold, where they become branch points of a nonlinear dynamical system. Contrary to the common belief that unavoidable cavity detuning impedes the formation of EPs, here we demonstrate that such detuning is necessary for compensating the carrier-induced frequency shift, hence restoring the EP. Furthermore, we find that the pump imbalance at lasing EPs varies with the total pump power, enabling their continuous tracking. This work uncovers the unstable nature of EPs above laser threshold in coupled semiconductor lasers, offering promising opportunities for the realization of self-pulsing nanolaser devices and frequency combs.

Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis.

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

Photonic Crystal Optical Parametric Oscillator.

We report a new class of Optical Parametric Oscillators, based on a 20µm-long semiconductor Photonic Crystal Cavity and operating at Telecom wavelengths. Because the confinement results from Bragg scattering, the optical cavity contains a few modes, approximately equispaced in frequency. Parametric oscillation is reached when these high Q modes are thermally tuned into a triply resonant configuration, whereas any other parametric interaction is strongly suppressed. The lowest pump power threshold is estimated to 50 - 70µW. This source behaves as an ideal degenerate Optical Parametric Oscillator addressing the needs in the field of quantum optical circuits, paving the way to the dense integration of highly efficient nonlinear sources of squeezed light or entangled photons pairs.

Mesoscopic Limit Cycles in Coupled Nanolasers.

Two coupled nanolasers exhibit a mode switching transition, theoretically described by mode beating limit cycle oscillations. Their decay rate is vanishingly small in the thermodynamic limit, i.e., when the spontaneous emission noise tends to zero. We provide experimental statistical evidence of mesoscopic limit cycles (∼10^{3} intracavity photons). Specifically, we show that the order parameter quantifying the limit cycle amplitude can be reconstructed from the mode intensity statistics. We observe a maximum of the averaged amplitude at the mode switching, accounting for limit cycle oscillations. We finally relate this maximum to a dip of mode cross-correlations, reaching a minimum of g_{ij}^{(2)}=2/3, which we show to be a mesoscopic limit. Coupled nanolasers are thus an appealing test bed for the investigation of spontaneous breaking of time translation symmetry in the presence of strong quantum fluctuations.

GaInP on oxide nonlinear photonic crystal technology.

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6 dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

High Q factor InP photonic crystal nanobeam cavities on silicon wire waveguides.

High-quality (Q) factor indium phosphide (InP)-based 1D photonic crystal nanobeam cavities are fabricated on silicon on insulator waveguides. Through the optimization of the fabrication process, the intrinsic Q factor of these fully encapsulated nanocavities is demonstrated to attain values higher than 100,000. Experimental and numerical investigations are carried out on the impact, on the Q factor, of the strength of the evanescent wave coupling between the cavity and the waveguide. We reveal that this coupling can result in a modification of the electromagnetic field distribution in the resonant mode, which gives rise up to a factor 4 reduction in the intrinsic Q factor for the structures under study.

Integrated III-V Photonic Crystal--Si waveguide platform with tailored optomechanical coupling.

Optomechanical systems, in which the vibrations of a mechanical resonator are coupled to an electromagnetic radiation, have permitted the investigation of a wealth of novel physical effects. To fully exploit these phenomena in realistic circuits and to achieve different functionalities on a single chip, the integration of optomechanical resonators is mandatory. Here, we propose a novel approach to heterogeneously integrate arrays of two-dimensional photonic crystal defect cavities on top of silicon-on-insulator waveguides. The optomechanical response of these devices is investigated and evidences an optomechanical coupling involving both dispersive and dissipative mechanisms. By controlling the optical coupling between the waveguide and the photonic crystal, we were able to vary and understand the relative strength of these couplings. This scalable platform allows for an unprecedented control on the optomechanical coupling mechanisms, with a potential benefit in cooling experiments, and for the development of multi-element optomechanical circuits in the framework of optomechanically-driven signal-processing applications.

Subduing surface recombination for continuous-wave operation of photonic crystal nanolasers integrated on Silicon waveguides.

Detrimental surface recombination of carriers in InP-based photonic crystal nanobeams containing quantum wells is reduced by employing chemical treatment followed by silica encapsulation. Carrier lifetime is shown to recover to 2.63ns close to the bulk value. This enables us to obtain optically pumped room-temperature continuous-wave nanolasers at 1.55µm integrated onto Silicon on insulator waveguide platform with a threshold of 8µW.

Dispersive-wave-based octave-spanning supercontinuum generation in InGaP membrane waveguides on a silicon substrate.

We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a silicon substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.

Nonlinear properties of dispersion engineered InGaP photonic wire waveguides in the telecommunication wavelength range.

We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We characterize the linear and nonlinear properties of these waveguide structures. Waveguides with a linear loss of 12 dB/cm and which are coupled to a single mode fiber through gratings with a -7.5 dB coupling loss are realized. From four wave mixing experiments, we extract the real part of the nonlinear parameter γ to be 475 ± 50 W(-1)m(-1) and from nonlinear transmission measurements we infer the absence of two-photon absorption and measure a three-photon absorption coefficient of (2.5 ± 0.5) x 10(-2) cm(3)GW(-2).

Thermal management in hybrid InP/silicon photonic crystal nanobeam laser.

Thermal properties of InP-based quantum well photonic crystal nanobeam lasers heterogeneously integrated on silicon on insulator waveguides are studied. We show both numerically and experimentally the reduction of the thermal resistance of the III-V cavities by adjusting the composition of the layer which bonds the III-V materials to the silicon wafer and by adding an over-cladding on top of the cavities. Using a bonding layer made of benzocyclobutene and SiO(2) and an over-cladding of MgF(2), we found a decrease by a factor higher than 35 compared to air-suspended photonic crystal nanobeam cavities. Such optimized structures are demonstrated to operate under continuous wave pumping for several 10's of minutes despite the adverse effect of non-radiative surface recombination of carriers.

Experimental demonstration of a hybrid III-V-on-silicon microlaser based on resonant grating cavity mirrors.

We present the experimental demonstration of a novel class of hybrid III-V-on-silicon microlasers. We show that by coupling a silicon cavity to a III-V waveguide, the interaction between the propagating mode in the III-V waveguide and the cavity mode in the silicon resonator results in high, narrowband reflection back into the III-V waveguide, forming a so-called resonant mirror. By combining two such mirrors and providing optical gain in the III-V wire between these two mirrors, laser operation can be realized. This optically pumped device measures 55 by 2 µm, requires microwatt-level threshold pump power, and shows single-mode laser emission with a side-mode suppression ratio of up to 39 dB.

Dynamics of band-edge photonic crystal lasers.

Band-edge photonic crystal lasers were fabricated and their temporal characteristics were minutely analyzed using a high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 microm with turn on time ranging from 17ps to 30ps.

Non-trivial scaling of self-phase modulation and three-photon absorption in III-V photonic crystal waveguides.

We investigate the nonlinear response of photonic crystal waveguides with suppressed two-photon absorption. A moderate decrease of the group velocity (approximately c/6 to c/15, a factor of 2.5) results in a dramatic (x 30) enhancement of three-photon absorption well beyond the expected scaling, proportional, variant 1/v3g. This non-trivial scaling of the effective nonlinear coefficients results from pulse compression, which further enhances the optical field beyond that of purely slow-group velocity interactions. These observations are enabled in mm-long slow-light photonic crystal waveguides owing to the strong anomalous group-velocity dispersion and positive chirp. Our numerical physical model matches measurements remarkably.

High contrast reflection modulation near 1.55mum in InP 2D photonic crystals on silicon wafer.

We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.