Cavity-mediated electron-photon pairs.

Quantum information, communication, and sensing rely on the generation and control of quantum correlations in complementary degrees of freedom. Free electrons coupled to photonics promise novel hybrid quantum technologies, although single-particle correlations and entanglement have yet to be shown. In this work, we demonstrate the preparation of electron-photon pair states using the phase-matched interaction of free electrons with the evanescent vacuum field of a photonic chip-based optical microresonator. Spontaneous inelastic scattering produces intracavity photons coincident with energy-shifted electrons, which we employ for noise-suppressed optical mode imaging. This parametric pair-state preparation will underpin the future development of free-electron quantum optics, providing a route to quantum-enhanced imaging, electron-photon entanglement, and heralded single-electron and Fock-state photon sources.

Integrated photonics enables continuous-beam electron phase modulation.

Integrated photonics facilitates extensive control over fundamental light-matter interactions in manifold quantum systems including atoms1, trapped ions2,3, quantum dots4 and defect centres5. Ultrafast electron microscopy has recently made free-electron beams the subject of laser-based quantum manipulation and characterization6-11, enabling the observation of free-electron quantum walks12-14, attosecond electron pulses10,15-17 and holographic electromagnetic imaging18. Chip-based photonics19,20 promises unique applications in nanoscale quantum control and sensing but remains to be realized in electron microscopy. Here we merge integrated photonics with electron microscopy, demonstrating coherent phase modulation of a continuous electron beam using a silicon nitride microresonator. The high-finesse (Q0 ≈ 106) cavity enhancement and a waveguide designed for phase matching lead to efficient electron-light scattering at extremely low, continuous-wave optical powers. Specifically, we fully deplete the initial electron state at a cavity-coupled power of only 5.35 microwatts and generate >500 electron energy sidebands for several milliwatts. Moreover, we probe unidirectional intracavity fields with microelectronvolt resolution in electron-energy-gain spectroscopy21. The fibre-coupled photonic structures feature single-optical-mode electron-light interaction with full control over the input and output light. This approach establishes a versatile and highly efficient framework for enhanced electron beam control in the context of laser phase plates22, beam modulators and continuous-wave attosecond pulse trains23, resonantly enhanced spectroscopy24-26 and dielectric laser acceleration19,20,27. Our work introduces a universal platform for exploring free-electron quantum optics28-31, with potential future developments in strong coupling, local quantum probing and electron-photon entanglement.

Ultrafast optical circuit switching for data centers using integrated soliton microcombs.

Due to the slowdown of Moore's law, it will become increasingly challenging to efficiently scale the network in current data centers utilizing electrical packet switches as data rates grow. Optical circuit switches (OCS) represent an appealing option to overcome this issue by eliminating the need for expensive and power-hungry transceivers and electrical switches in the core of the network. In particular, optical switches based on tunable lasers and arrayed waveguide grating routers are quite promising due to the use of a passive core, which increases fault tolerance and reduces management overhead. Such an OCS-network can offer high bandwidth, low network latency and an energy-efficient and scalable data center network. To support dynamic data center workloads efficiently, however, it is critical to switch between wavelengths at nanosecond (ns) timescales. Here we demonstrate ultrafast OCS based on a microcomb and semiconductor optical amplifiers (SOAs). Using a photonic integrated Si3N4 microcomb, sub-ns (<520 ps) switching along with the 25-Gbps non-return-to-zero (NRZ) and 50-Gbps four-level pulse amplitude modulation (PAM-4) burst mode data transmission is achieved. Further, we use a photonic integrated circuit comprising an Indium phosphide based SOA array and an arrayed waveguide grating to show sub-ns switching (<900 ps) along with 25-Gbps NRZ burst mode transmission providing a path towards a more scalable and energy-efficient wavelength-switched network for data centers in the post Moore's Law era.