Determining the Thermal Properties of Buckypapers Used in Photothermal Desorption.

Volatile organic compounds (VOCs) pose an occupational exposure risk due to their commonplace usage across industrial and vocational sectors. With millions of workers annually exposed, monitoring personal VOC exposures becomes an important task. As such, there is a need to improve current monitoring techniques by increasing sensitivity and reducing analysis costs. Recently, our lab developed a novel, preanalytical technique known as photothermal desorption (PTD). PTD uses pulses of high-energy, visible light to thermally desorb analytes from carbonaceous sorbents, with single-walled carbon nanotube buckypapers (BPs) having the best overall performance. To apply this new technology most effectively for chemical analysis, a better understanding of the theoretical framework of the thermal phenomena behind PTD must be gained. The objectives of the present work were 3-fold: measure the thermal response of BPs during irradiation with light; determine the best method for conducting such measurements; and determine the thermal conductivity of BPs. BPs were exposed to four energy densities, produced by light pulses, ranging from 0.28 to 1.33 J/cm2, produced by a xenon flash lamp. The resulting temperature measurements were obtained via fast response thermocouple (T/C) mounted to BPs by three techniques (pressing, adhering, and embedding). Temperature increase measured by T/C using the adhering and pressing techniques resulted in similar values, 29.2 ± 0.8 to 56 ± 3 °C and 29.1 ± 0.9 to 50 ± 5 °C, respectively, while temperature increase measured by embedding the T/C into the BP showed statistically larger increases ranging from 35.2 ± 0.9 to 76 ± 4 °C. Peak BP temperatures for each mounting technique were also compared with the temperatures generated by the light source, which resulted in embedded BPs demonstrating the most temperature conversion among the techniques (74-86%). Based on these results, embedding T/Cs into the BP was concluded to be the best way to measure BP thermal response during PTD. Additionally, the present work modeled BP thermal conductivity using a steady-state comparative technique and found the material's conductivity to be 10.6 ± 0.6 W/m2. The present work's findings will help pave the way for future developments of the PTD method by allowing calculation of the energy density necessary to attain a desired sorbent temperature and providing a means for comparing BP fabrication techniques and evaluating BP suitability for PTD before conducting PTD trials with analytes of interest. Sorbents with greater thermal conductivity are expected to desorb more evenly and withstand higher energy density exposures.

Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy.

Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.

Room Temperature Skyrmions in Strain-Engineered FeGe thin films.

Skyrmions hold great promise for low-energy consumption and stable high density information storage, and stabilization of the skyrmion lattice (SkX) phase at or above room temperature is greatly desired for practical use. The topological Hall effect can be used to identify candidate systems above room temperature, a challenging regime for direct observation by Lorentz electron microscopy. Atomically ordered FeGe thin films are grown epitaxially on Ge(111) substrates with ~ 4 % tensile strain. Magnetic characterization reveals enhancement of Curie temperature to 350 K due to strain, well above the bulk value of 278 K. Strong topological Hall effect was observed between 10 K and 330 K, with a significant increase in magnitude observed at 330 K. The increase in magnitude occurs just below the Curie temperature, a similar relative temperature position as the onset of Skx phase in bulk FeGe. The results suggest that strained FeGe films may host a SkX phase above room temperature when significant tensile strain is applied.