Droplet epitaxy quantum dot based infrared photodetectors.

The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al0.3Ga0.7As barrier is reported. The high control over dot electronic properties and the high achievable number density allowed by droplet epitaxy technique permitted us to realize a device using a single dot layer in the active region. Moreover, thanks to the independent control over dot height and width, we were able to obtain a very sharp absorption peak in the thermal infrared region (3-8 µm). Low temperature photocurrent spectrum was measured by Fourier spectroscopy, showing a narrow peak at 198 meV (∼6.3 µm) with a full width at half maximum of 25 meV. The observed absorption is in agreement with theoretical prediction based on effective mass approximation of the dot electronic transition.

SiGe quantum well infrared photodetectors on strained-silicon-on-insulator.

We demonstrate p-type SiGe quantum well infrared photodetectors (QWIPs) on a strained-silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the QWIP heterostructure with an average composition of Si0.7Ge0.3 and the substrate, and therefore lifts restrictions to the active material thickness faced by SiGe growth on silicon or silicon-on-insulator substrates. The realized sSOI QWIPs feature a responsivity peak at detection wavelengths around 6 µm, based on a transition between heavy-hole states. The fabricated devices have been thoroughly characterized and compared to equivalent material simultaneously grown on virtual Si0.7Ge0.3 substrates based on graded SiGe buffers. Responsivities of up to 3.6 mA/W are achieved by the sSOI QWIPs at 77 K, demonstrating the large potential of sSOI-based devices as components for a group-IV optoelectronic platform in the mid-infrared spectral region.

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.

Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resonator (PCR) modes based on precise positioning of these dots at the maximum of the respective mode field energy density. Perfect site control of Ge QDs grown on prepatterned silicon-on-insulator substrates was exploited to fabricate in one processing run almost 300 PCRs containing single QDs in systematically varying positions within the cavities. Extensive photoluminescence studies on this cavity chip enable a direct evaluation of the position-dependent coupling efficiency between single dots and selected cavity modes. The experimental results demonstrate the great potential of the approach allowing CMOS-compatible parallel fabrication of arrays of spatially matched dot/cavity systems for group-IV-based data transfer or quantum optical systems in the telecom regime.

Electrically pumped semiconductor laser with monolithic control of circular polarization.

We demonstrate surface emission of terahertz (THz) frequency radiation from a monolithic quantum cascade laser with built-in control over the degree of circular polarization by "fishbone" gratings composed of orthogonally oriented aperture antennas. Different grating concepts for circularly polarized emission are introduced along with the presentation of simulations and experimental results. Fifth-order gratings achieve a degree of circular polarization of up to 86% within a 12°-wide core region of their emission lobes in the far field. For devices based on an alternative transverse grating design, degrees of circular polarization as high as 98% are demonstrated for selected far-field regions of the outcoupled THz radiation and within a collection half-angle of about 6°. Potential and limitations of integrated antenna gratings for polarization-controlled emission are discussed.

High-responsivity mid-infrared graphene detectors with antenna-enhanced photocarrier generation and collection.

Graphene is an attractive photoconductive material for optical detection due to its broad absorption spectrum and ultrashort response time. However, it remains a great challenge to achieve high responsivity in graphene detectors because of graphene's weak optical absorption (only 2.3% in the monolayer graphene sheet) and short photocarrier lifetime (<1 ps). Here we show that metallic antenna structures can be designed to simultaneously improve both light absorption and photocarrier collection in graphene detectors. The coupled antennas concentrate free space light into the nanoscale deep-subwavelength antenna gaps, where the graphene light interaction is greatly enhanced as a result of the ultrahigh electric field intensity inside the gap. Meanwhile, the metallic antennas are designed to serve as electrodes that collect the generated photocarriers very efficiently. We also elucidate the mechanism of photoconductive gain in the graphene detectors and demonstrate mid-infrared (mid-IR) antenna-assisted graphene detectors at room temperature with more than 200 times enhancement of responsivity (∼0.4 V/W at λ0 = 4.45 µm) compared to devices without antennas (<2 mV/W).

High-power arrays of quantum cascade laser master-oscillator power-amplifiers.

We report on multi-wavelength arrays of master-oscillator power-amplifier quantum cascade lasers operating at wavelengths between 9.2 and 9.8 µm. All elements of the high-performance array feature longitudinal (spectral) as well as transverse single-mode emission at peak powers between 2.7 and 10 W at room temperature. The performance of two arrays that are based on different seed-section designs is thoroughly studied and compared. High output power and excellent beam quality render the arrays highly suitable for stand-off spectroscopy applications.