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1.
ACS Appl Mater Interfaces ; 12(17): 19495-19503, 2020 Apr 29.
Artigo em Inglês | MEDLINE | ID: mdl-32250097

RESUMO

In this work, we study the transport properties of triple-cation halide perovskite thin films and their evolution when exposed to air or vacuum and after light-soaking. Transport parameters were investigated by steady-state dark and photocurrent methods as well as by the steady-state photocarrier grating experiment (SSPG) from which the ambipolar diffusion length of thin film materials is estimated. Combined with other characterization measurements, such as photoluminescence and Fourier transform photocurrent spectroscopy, these techniques demonstrate that air plays an important role in the passivation of the surface trap states of the perovskite films. The competition between passivation and degradation of the films under light-soaking was also deeply investigated. Moreover, we show that the degradation of the transport parameters upon light-soaking could be linked mainly to a degradation of the carrier mobility instead of their lifetime.

2.
ACS Appl Mater Interfaces ; 11(33): 30259-30268, 2019 Aug 21.
Artigo em Inglês | MEDLINE | ID: mdl-31347356

RESUMO

We show that mechanochemically synthesized halide perovskite powders from a ball milling approach can be employed to fabricate a variety of lead halide perovskites with exceptional intrinsic stability. Our MAPbI3 powder exhibits higher thermal stability than conventionally processed thin films, without degradation after more than two and a half years of storage and only negligible degradation after heat treatment at 220 °C for 14 h. We further show facile recovery strategies of nonphase-pure powders by simple remilling or mild heat treatment. Moreover, we demonstrate the mechanochemical synthesis of phase-pure mixed perovskite powders, such as (Cs0.05FA0.95PbI3)0.85(MAPbBr3)0.15, from either the individual metal and organic halides or from readily prepared ternary perovskites, regardless of the precursor phase purity. Adding potassium iodide (KI) to the milling process successfully passivated the powders. We also succeeded in preparing a precursor solution on the basis of the powders and obtained uniform thin films for integration into efficient perovskite solar cells from spin-coating this solution. We find the KI passivation remains in the devices, leading to improved performance and significantly reduced hysteresis. Our work thus demonstrates the potential of mechanochemically synthesized halide perovskite powders for long-time storage and upscaling, further paving the way toward commercialization of perovskite-based optoelectronic devices.

3.
Sci Rep ; 8(1): 16139, 2018 Oct 31.
Artigo em Inglês | MEDLINE | ID: mdl-30382171

RESUMO

In this work, the fabrication of MoOx-free semitransparent perovskite solar cells (PSC) with Power Conversion Efficiencies (PCE) up to 15.7% is reported. Firstly, opaque PSCs up to 19.7% were fabricated. Then, the rear metal contact was replaced by a highly transparent and conductive indium tin oxide (ITO) film, directly sputtered onto the hole selective layer, without any protective layer between Spiro-OMeTAD and rear ITO. To the best of our knowledge, this corresponds to the most efficient buffer layer-free semitransparent PSC ever reported. Using time-resolved photoluminescence (TRPL) technique on both sides of the semitransparent PSC, Spiro-OMeTAD/perovskite and perovskite/TiO2 interfaces were compared, confirming the great quality of Spiro-OMeTAD/perovskite interface, even after damage-less ITO sputtering, where degradation phenomena result less important than for perovskite/TiO2 one. Finally, a 4-terminal tandem was built combining semitransparent PSC with a commercially-available Aluminium Back Surface Field (Al-BSF) silicon wafer. That silicon wafer presents PCE = 19.52% (18.53% after being reduced to cell size), and 5.75% once filtered, to generate an overall 4 T tandem efficiency of 21.18% in combination with our champion large semitransparent PSC of 15.43%. It means an absolute increase of 1.66% over the original silicon wafer efficiency and a 2.65% over the cut Si cell.

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