Up to 300†K lasing with GeSn-On-Insulator microdisk resonators.

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.

Lasing in strained germanium microbridges.

Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned by strain or alloying with Sn to become direct, as it was found to be required for interband semiconductor lasers. Here, we report lasing in the mid-infrared region (from λ = 3.20 µm up to λ = 3.66 µm) in tensile strained Ge microbridges uniaxially loaded above 5.4% up to 5.9% upon optical pumping, with a differential quantum efficiency close to 100% with a lower bound of 50% and a maximal operating temperature of 100 K. We also demonstrate the effect of a non-equilibrium electron distribution in k-space which reveals the importance of directness for lasing. With these achievements the strained Ge approach is shown to compare well to GeSn, in particular in terms of efficiency.

Metallic nanoparticles enhanced the spontaneous emission of semiconductor nanocrystals embedded in nanoimprinted photonic crystals.

We report on a method to enhance the light-emission efficiency of printable thin films of a polymer doped with luminescent (CdSe)ZnS nanocrystals via metallic nanoparticles and nanoimprinted photonic crystals. We experimentally show a strong fluorescence enhancement of nanocrystals by coupling exciton-plasmon with the localized surface plasmon of metallic nanoparticles. The emitted light is efficiently diffracted by photonic crystals structures directly imprinted in the nanocomposite polymer. By combining the field susceptibility technique with optical Bloch equations, we examine the interaction of the quantum and plasmonic entities at small distances.

Modification of spontaneous emission of (CdSe)ZnS nanocrystals embedded in nanoimprinted photonic crystals.

Highly luminescent (CdSe)ZnS nanocrystals, with band edge emission in the red region of the visible spectrum, were successfully synthesized and incorporated in a resist, namely mr-NIL 6000. The nanocomposite material was imprinted by using conventional nanoimprint lithography (NIL) process. We report on the fabrication and characterization of nanoimprinted photonic crystals in this new functional material. Experiments showed good imprint properties of the NC/polymer based material and that the surface nanostructuration improves the light extraction efficiency by over 2 compared to a nanoimprinted unpatterned surface.

Photoluminescence enhancement in nanoimprinted photonic crystals and coupled surface plasmons.

A method to enhance the photoluminescence of dye chromophores-loaded by coupling the emission to surface plasmons in nanoimprinted photonic crystals is reported. A 9-fold enhancement in the spontaneous emission intensity of a rhodamine-doped polymer film is achieved on a silver layer due to surface plasmon excitation. By changing the surface plasmon frequency, this enhancement can be suppressed. When the polymer film is patterned by nanoimprint lithography with a twodimensional photonic crystal the photoluminescence intensity increases up to 27 times compared to unpatterned samples on a quartz substrate.