Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus/InSe van der Waals Heterostructures.

Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures have presented great impact for the development of a wide range of technologies, such as in the optoelectronics and communication fields. Nevertheless, the lack of a photogenerated charge carrier at the device's interface leads to a poor charge carrier collection efficiency and a low linear dichroism ratio, hindering the achievement of high-performance optoelectronic devices with multifunctionalities. Herein, we present a type-II violet phosphorus (VP)/InSe vdW heterostructure that is predicted via density functional theory calculation and confirmed by Kelvin probe force microscopy. Benefiting from the type-II band alignment, the VP/InSe vdW heterostructure-based photodetector achieves excellent photodetection performance such as a responsivity (R) of 182.8 A/W, a detectivity (D*) of 7.86 × 1012 Jones, and an external quantum efficiency (EQE) of 11,939% under a 1064 nm photon excitation. Furthermore, the photodetection performance can be enhanced by manipulating the device geometry by inserting a few layers of graphene between the VP and InSe (VP/Gr/InSe). Remarkably, the VP/Gr/InSe vdW heterostructure shows a competitive polarization sensitivity of 2.59 at 1064 nm and can be integrated as an image sensor. This work demonstrates that VP/InSe and VP/Gr/InSe vdW heterostructures will be effective for promising integrated NIR optoelectronics.

Tunable metalensing based on plasmonic resonators embedded on thermosresponsive hydrogel.

Metalenses of adjustable power and ultrathin flat zoom lens system have emerged as a promising and key photonic device for integrated optics and advanced reconfigurable optical systems. Nevertheless, realizing an active metasurface retaining lensing functionality in the visible frequency regime has not been fully explored to design reconfigurable optical devices. Here, we present a focal tunable metalens and intensity tunable metalens in the visible frequency regime through the control of the hydrophilic and hydrophobic behavior of freestanding thermoresponsive hydrogel. The metasurface is comprised of plasmonic resonators embedded on the top of hydrogel which serves as dynamically reconfigurable metalens. It is shown that the focal length can be continuously tuned by adjusting the phase transition of hydrogel, the results reveal that the device is diffraction limited in different states of hydrogel. In addition, the versatility of hydrogel-based metasurfaces is further explored to design intensity tunable metalens, that can dynamically tailor the transmission intensity and confined it into the same focal spot under different states, i.e., swollen and collapsed. It is anticipated that the non-toxicity and biocompatibility make the hydrogel-based active metasurfaces suitable for active plasmonic devices with ubiquitous roles in biomedical imaging, sensing, and encryption systems.

MX family: an efficient platform for topological spintronics based on Rashba and Zeeman-like spin splittings.

Taking various combinations of M = (Mo, W) and X = (C, S, Se) as examples, we propose that MX (M = transition metals, X = IV,V or VI elements) family can establish an excellent platform for both conventional and topological spintronics applications based on anisotropic Rashba-like and non-magnetic Zeeman-type spin splittings with electrically tunable nature. In particular, we observe sizeable Zeeman-like and Rashba-like spin splittings with an anisotropic nature. Meanwhile, they exhibit Rashba-like and topologically robust helical edge states when grown in ferroelectric and paraelectric phases, respectively. These MX monolayers are realized to be quantum valley Hall insulators due to valley contrasting Berry curvatures. The carriers in these MX monolayers can be selectively excited from opposite valleys depending on the polarity of circularly polarized light. The amplitude of the spin splitting can be further tuned by applying external means such as strain, electric field or alloy engineering. Furthermore, considering graphene sheet over the WC monolayer as a prototype example, we show that these MX monolayers can boost the relativistic effect by coupling with the systems exhibiting extremely weak spin-orbit coupling (SOC). Depending on the surface of WC monolayer in contact with the graphene sheet, graphene over WC monolayer passes through the transformation from the semiconducting junction to the Shotcky barrier-free contact. Finally, we reveal that these MX monolayers could also be grown on the substrates such as WS2(001)and GaTe (001) with type-II band alignment, where electron and hole become layer splitted across the interface. Our analysis should be fairly applied to other systems with strong SOC and an equivalent geometrical structure to the MX monolayers.

Multiple magnetic phase transitions, electrical and optical properties of FeTe2 single crystals.

Single-crystalline FeTe2 in marcasite phase with orthorhombic structure was prepared via chemical vapor transport. Cooling FeTe2 single crystals from room temperature down to [Formula: see text], multiple magnetic phase transitions were observed. Paramagnetic (PM) to antiferromagnetic (AFM) and then to ferromagnetic (FM) occurred at [Formula: see text] and [Formula: see text] for in-plane, [Formula: see text] and [Formula: see text] for out-of-plane, respectively. A strong uniaxial magnetic anisotropy was found due to FeTe6 octahedron distortion and structural modulation in FM region. The novel negative volume expansion (NVE) initiated in the vicinity of AFM to FM transition. An abrupt frequency shift of the most intense mode at [Formula: see text] and evolution of the Te-Te stretching mode near [Formula: see text], corresponding to the phase transition from AFM to FM were observed. The temperature-dependent resistance revealed an anomaly (semiconductor to metallic transition) around AFM-FM transition, which can easily be suppressed and move to high temperature by the applied magnetic field. The results from XRD, Raman and resistivity indicated that the structural parameters, vibration frequency and transport are sensitive to the phase transition from AFM to FM. The nature of direct band gap with [Formula: see text] was identified through UV-Vis-NIR spectrum of FeTe2 single crystals at room temperature.