RESUMO
The structural, electronic and thermoelectric properties of AZr1-xMxO3 (A = Ba, Ca, Sr; M = Al, Cu, x = 0.25) without and with an oxygen vacancy (Vo) have been unveiled using the Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA) functional along with Tran-Blaha modified Becke-Jonhson (TB-mBJ)approximation based on Density Functional Theory (DFT) in the framework of WIEN2k code for memristors applications. Moreover, isosurface charge density plots have been calculated by using Vienna ab initio Simulation Package (VASP) simulation code. The analysis of structural parameters reveals that substituting Zr4+ with Al3+ and Cu2+ causes the lattice distortion which tends to increase in the presence of Vo along with dopant. The study of band structure, density of states (DOS) and isosurface charge density plots predict the enhanced charge conduction and formation of conducting filaments (CFs) for all composites with dopant and/or Vo. Moreover, spin polarized density of states for Cu doped composites has also been calculated to confirm the large exchange splitting of Cu-3d states. The thermoelectric characteristics of considered composites have also been explored using the Boltztrap code to better explain the semi-classical Boltzmann transport theory. Thermoelectric parameters confirm the semiconductor nature of all composites, ensuring the compatibility for memristors and thermoelectric devices applications. In addition to this spin polarized thermoelectric behavior of Cu doped composites that ensure the contribution of spin down (↓) states of Cu for charge transport mechanism. The SrZrCuO3+Vo composite is found most promising candidate followed by BaZrCuO3 for memristors applications while, CaZrCuO3 is found most suitable amongst studied composites for thermoelectric devices.
