Physical properties of {Ti,Zr,Hf}2Ni2Sn compounds.

Physical properties, i.e. electrical resistivity (4.2-800 K), Seebeck coefficient (300-800 K), specific heat (2-110 K), Vickers hardness and elastic moduli (RT), have been defined for single-phase compounds with slightly nonstoichiometric compositions: Ti2.13Ni2Sn0.87, Zr2.025Ni2Sn0.975, and Hf2.055Ni2Sn0.945. From X-ray single crystal and TEM analyses, Ti2+xNi2Sn1-x, x ∼ 0.13(1), is isotypic with the U2Pt2Sn-type (space group P42/mnm, ternary ordered version of the Zr3Al2-type), also adopted by the homologous compounds with Zr and Hf. For all three polycrystalline compounds (relative densities >95%) the electrical resistivity of the samples is metallic-like with dominant scattering from static defects mainly conditioned by off-stoichiometry. Analyses of the specific heat curves Cpvs. T and Cp/T vs. T2 reveal Sommerfeld coefficients of γTi2Ni2Sn = 14.3(3) mJ mol-1 K-2, γZr2Ni2Sn = 10(1) mJ mol-1 K-2, γHf2Ni2Sn = 9.1(5) mJ mol-1 K-2 and low-temperature Debye-temperatures: θLTD = 373(7)K, 357(14)K and 318(10)K. Einstein temperatures were in the range of 130-155 K. Rather low Seebeck coefficients (<15 µV K-1), power factors (pf < 0.07 mW mK-2) and an estimated thermal conductivity of λ < 148 mW cm-1 K-1 yield thermoelectric figures of merit ZT < 0.007 at ∼800 K. Whereas for polycrystalline Zr2Ni2Sn elastic properties were determined by resonant ultrasound spectroscopy (RUS): E = 171 GPa, ν = 0.31, G = 65.5 GPa, and B = 147 GPa, the accelerated mechanical property mapping (XPM) mode was used to map the hardness and elastic moduli of T2Ni2Sn. Above 180 K, Zr2Ni2Sn reveals a quasi-linear expansion with CTE = 15.4 × 10-6 K-1. The calculated density of states is similar for all three compounds and confirms a metallic type of conductivity. The isosurface of elf shows a spherical shape for Ti/Zr/Hf atoms and indicates their ionic character, while the [Ni2Sn]n- sublattice reflects localizations around the Ni and Sn atoms with a large somewhat diffuse charge density between the closest Ni atoms.

Boron-phil and boron-phob structure units in novel borides Ni3Zn2B and Ni2ZnB: experiment and first principles calculations.

The crystal structures of two novel borides in the Ni-Zn-B system, τ5-Ni3Zn2B and τ6-Ni2ZnB, were determined by single crystal X-ray diffraction (XRSC) in combination with selected area electron diffraction in a transmission electron microscope (SAED-TEM) and electron probe microanalysis (EPMA). Both compounds crystallize in unique structure types (space group C2/m, a = 1.68942(8) nm, b = 0.26332(1) nm, c = 0.61904(3) nm, ß = 111.164(2)°, RF = 0.0219 for Ni3Zn2B, and space group C2/m, a = 0.95296(7) nm, b = 0.28371(2) nm, c = 0.59989(1) nm, ß = 93.009(4)°, RF = 0.0163 for Ni2ZnB). Both compounds have similar building blocks: two triangular prisms centered by boron atoms are arranged along the c-axis separated by Zn layers, which form empty octahedra connecting the boron centered polyhedra. Consistent with the (Ni+Zn)/B ratio, isolated boron atoms are found in τ5-Ni3Zn2B, while B-B pairs exist in τ6-Ni2ZnB. The crystal structure of Ni2ZnB is closely related to that of τ4-Ni3ZnB2, i.e. Ni2ZnB can be formed by removing the nearly planar nickel layer in Ni3ZnB2 and shifting the origin of the unit cell to the center of the B-B pair. The electrical resistivity and specific heat of τ5-Ni3Zn2B reveal the metallic behavior of this compound with an anomaly at low temperature, possibly arising from a Kondo-type interaction. Further analysis on the lattice contribution of the specific heat reveals similarity with τ4-Ni3ZnB2 with some indications of lattice softening in τ5-Ni3Zn2B, which could be related to the increasing metal content and the absence of B-B bonding in τ5-Ni3Zn2B. For the newly found phases, τ5-Ni3Zn2B and τ6-Ni2ZnB as well as for τ3-Ni21Zn2B20 and τ4-Ni3ZnB2 density functional theory (DFT) calculations were performed by means of the Vienna Ab initio Simulation Package (VASP). Total energies and forces were minimized in order to determine the fully relaxed structural parameters, which agree very well with experiment. Energies of formations in the range of -25.2 to -26.9 kJ mol-1 were calculated and bulk moduli in the range of 179.7 to 248.9 GPa were derived showing hardening by increasing the B concentration. Charge transfer is discussed in terms of Bader charges resulting in electronic transfer from Zn to the system and electronic charge gain by B. Ni charge contributions vary significantly with crystallographic position depending on B located in the neighbourhood. The electronic structure is presented in terms of densities of states, band structures and contour plots revealing Ni-B and Ni-Zn bonding features.

The half Heusler system Ti1+xFe1.33-xSb-TiCoSb with Sb/Sn substitution: phase relations, crystal structures and thermoelectric properties.

Investigations of phase relations in the ternary system Ti-Fe-Sb show that the single-phase region of the Heusler phase is significantly shifted from stoichiometric TiFeSb (reported previously in the literature) to the Fe-rich composition TiFe1.33Sb. This compound also exhibits Fe/Ti substitution according to Ti1+xFe1.33-xSb (-0.17 ≤ x ≤ 0.25 at 800 °C). Its stability, crystal symmetry and site preference were established by using X-ray powder techniques and were backed by DFT calculations. The ab initio modeling revealed TiFe1.375Sb to be the most stable composition and established the mechanisms behind Fe/Ti substitution for the region Ti1+xFe1.33-xSb, and of the Fe/Co substitution within the isopleth TiFe1.33Sb-TiCoSb. The calculated residual resistivity of Ti1+xFe1.33-xSb, as well as of the isopleths TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25, are in a good correlation with the experimental data. From magnetic measurements and 57Fe Mössbauer spectrometry, a paramagnetic behavior down to 4.2 K was observed for TiFe1.33Sb, with a paramagnetic Curie-Weiss temperature of -8 K and an effective moment of 1.11µB per Fe. Thermoelectric (TE) properties were obtained for the four isopleths Ti1+xFe1.33-xSb, TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.29Co0.78Sb-TiCoSb0.75Sn0.25 by measurements of electrical resistivity (ρ), Seebeck coefficient (S) and thermal conductivity (λ) at temperatures from 300 K to 823 K allowing the calculation of the dimensionless figure of merit (ZT). Although p-type Ti1+xFe1.33-xSb indicates a semi-conducting behavior for the Fe rich composition (x = -0.133), the conductivity changes to a metallic type with increasing Ti content. The highest ZT = 0.3 at 800 K was found for the composition TiFe1.33Sb. The TE performance also increases with Fe/Co substitution and reaches ZT = 0.42 for TiCo0.5Fe0.665Sb. No further increase of the TE performance was observed for the Sb/Sn substituted compounds within the sections TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25. However, ZT-values could be enhanced by about 12% via the optimization of the preparation route (ball-mill conditions and heat treatments).

Mechanical properties of non-centrosymmetric CePt3Si and CePt3B.

Elastic moduli, hardness (both at room temperature) and thermal expansion (4.2-670 K) have been experimentally determined for polycrystalline CePt3Si and its prototype compound CePt3B as well as for single-crystalline CePt3Si. Resonant ultrasound spectroscopy was used to determine elastic properties (Young's modulus E and Poisson's ratio ν) via the eigenfrequencies of the sample and the knowledge of sample mass and dimensions. Bulk and shear moduli were calculated from E and ν, and the respective Debye temperatures were derived. In addition, ab initio DFT calculations were carried out for both compounds. A comparison of parameters evaluated from DFT with those of experiments revealed, in general, satisfactory agreement. Positive and negative thermal expansion values obtained from CePt3Si single crystal data are fairly well explained in terms of the crystalline electric field model, using CEF parameters derived recently from inelastic neutron scattering. DFT calculations, in addition, demonstrate that the atomic vibrations keep almost unaffected by the antisymmetric spin-orbit coupling present in systems with crystal structures having no inversion symmetry. This is opposite to electronic properties, where the antisymmetric spin-orbit interaction has shown to distinctly influence features like the superconducting condensate of CePt3Si.

The Ti-Mn system revisited: experimental investigation and thermodynamic modelling.

As the Ti-Mn phase diagram is part of numerous ternary and higher order systems of technological importance, the present paper defines phase relations which have been experimentally established throughout this work from 800 °C to the melting range based on Differential Thermal Analyses (DTA), X-ray powder diffraction, metallography and Electron Probe Micro Analysis (EPMA) techniques on ∼50 alloys, which were prepared by arc melting or high frequency melting under high purity argon starting from freshly cleaned metal ingots. Novel compounds were identified and reaction isotherms were redefined accordingly. In the Ti-rich region a novel compound TiMn was detected, sandwiched between the known phases: TiMn1-x (∼45 at% Mn) and TiMn1+x (∼55 at% Mn). In the Mn-rich region the hitherto unknown crystal structure of TiMn∼3 was solved from X-ray single crystal diffraction data and found to be of a unique structure type Ti6(Ti1-xMnx)6Mn25 (x = 0.462; space group Pbam (#55); a = 0.79081(3) nm, b = 2.58557(9) nm, c = 0.47931(2) nm), which consists of two consecutive layers of the hexagonal MgZn2-type Laves phase (TiMn2) and a combined layer of alternate structure blocks of MgZn2 type and Zr4Al3 type. Whereas TiMn can be considered as a line compound (solubility range <∼1 at%), the homogeneity regions of the Ti-Mn compounds are significant (determined by EPMA): TiMn1-x (44.0 to 46.6 at% Mn), TiMn1+x (54.6 to 56.3 at% Mn), Ti1+xMn2-x (MgZn2-type, 59 to 69 at% Mn at 1000 °C: -0.08 < x < 0.23), TiMn∼3 (unique type; 74 to 76.5 at% Mn) and TiMn∼4 (R-phase: Ti8(TixMn1-x)6Mn39, 80 to 84 at% Ti). Supported by ab initio calculations of the ground state energy for the Laves phase, the new experimental results enabled thermodynamic modelling of the entire Ti-Mn phase diagram providing a complete and novel set of thermodynamic data thus providing a sound basis for future thermodynamic predictions of higher order Ti-Mn-X-Y systems.

Ba-filled Ni-Sb-Sn based skutterudites with anomalously high lattice thermal conductivity.

Novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450 °C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni-Sn-Sb and in the quaternary Ba-Ni-Sb-Sn systems. Phase equilibria in the Ni-Sn-Sb system at 450 °C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba-Ni-Sn-Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the "rattling behaviour" consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10(-6) K(-1) for Ni4Sb8.2Sn3.8 and 13.8 × 10(-6) K(-1) for Ba0.92Ni4Sb6.7Sn5.3. The room temperature Vickers hardness values vary within the range from 2.6 GPa to 4.7 GPa. Severe plastic deformation via high-pressure torsion was used to introduce nanostructuring; however, the physical properties before and after HPT showed no significant effect on the materials thermoelectric behaviour.

Ba5{V,Nb}12Sb19+x, novel variants of the Ba5Ti12Sb19+x-type: crystal structure and physical properties.

The novel compounds Ba5{V,Nb}12Sb19+x, initially found in diffusion zone experiments between Ba-filled skutterudite Ba0.3Co4Sb12 and group V transition metals (V,Nb,Ta), were synthesized via solid state reaction and were characterized by means of X-ray (single crystal and powder) diffraction, electron probe microanalysis (EPMA), and physical (transport and mechanical) properties measurements. Ba5V12Sb19.41 (a = 1.21230(1) nm, space group P4[combining overline]3m; RF(2) = 0.0189) and Ba5Nb12Sb19.14 (a = 1.24979(2) nm, space group P4[combining overline]3m; RF(2) = 0.0219) are the first representatives of the Ba5Ti12Sb19+x-type, however, in contrast to the aristotype, the structure of Ba5V12Sb19.41 shows additional atom disorder. Temperature dependent ADPs and specific heat of Ba5V12Sb19.41 confirmed the rattling behaviour of Ba1,2 and Sb7 atoms within the framework built by V and Sb atoms. Electrical resistivity of both compounds show an upturn at low temperature, and a change from p- to n-type conductivity above 300 K in Ba4.9Nb12Sb19.4. As expected from the complex crystal structure and the presence of defects and disorder, the thermal conductivity is suppressed and lattice thermal conductivity of ∼0.43 W m(-1) K(-1) is near values typical for amorphous systems. Vicker's hardness of (3.8 ± 0.1) GPa (vanadium compound) and (3.5 ± 0.2) GPa (niobium compound) are comparable to Sb-based filled skutterudites. However, the Young's moduli measured by nanoindentation for these compounds EI(Ba4.9V12Sb19.0) = (85 ± 2) GPa and EI(Ba4.9Nb12Sb19.4) = (79 ± 5) GPa are significantly smaller than those of skutterudites, which range from about 130 to 145 GPa.

Thermal, magnetic and electronic properties of non-centrosymmetric YbPt2B.

Ternary YbPt2B crystallizes in the non-centrosymmetric hexagonal CePt2B-type structure (space group P6(2)22). Electrical resistivity, specific heat and magnetic measurements reveal a magnetic instability at 5.6 K. Furthermore, a spin-reorientation of presumably a ferromagnetic type occurs around 1.5 K. The behaviour at low temperature is governed by a rather weak Kondo effect, T(K) ⩽ 1 K, in the presence of strong crystalline electric field splitting, with a doublet ground state. Besides, the complex magnetic behaviour presumably results from a Dzyaloshinskii-Moriya interaction triggered by the absence of inversion symmetry in the crystal structure. Scaling according to the de Gennes factor traces back magnetic ordering in YbPt2B to the Rudermann-Kittel-Kasuya-Yoshida (RKKY) interaction and the smooth evolution of the lattice constants and the unit cell volume of REPt2B (RE = rare earths) refers to the 4f(13) electronic configuration of Yb in YbPt2B.

Strong-coupling BCS superconductivity in noncentrosymmetric BaPtSi3: a low-temperature study.

We report on measurements of the temperature dependence of the magnetic penetration depth of a high-quality sample of BaPtSi3 (Tc = 2.25 K). We observe a temperature-independent behaviour below T ≃ 0.2 Tc, which is firm evidence for the presence of an isotropic superconducting gap in this material. In the whole temperature range the superfluid density is described well by a strong-coupling Bardeen-Cooper-Schrieffer (BCS) model with an isotropic gap Δ0 ≈ 2kBTc. Our results provide further support for conventional BCS superconductivity in the nonmagnetic members of the noncentrosymmetric family of superconductors that crystallize with the BaNiSn3-type tetragonal structure.

Novel refractory phase, Ta7Si2(Si(x)B(1-x))2.

X-ray single crystal (XSC) and powder diffraction data (XPD) were used to elucidate the crystal structure of a new refractory silicon boride Ta7Si2(Si(x)B(1-x))2 (x = 0.12). Tetragonal Ta7Si2(Si(x)B(1-x))2 (space group P4/mbm; a = 0.62219(2) nm, c = 0.83283(3) nm) with B atoms randomly sharing the 4g site with Si atoms is isotypic with the boride structure of (Re,Co)7B4. The architecture of the structure of Ta7Si2(Si(x)B(1-x))2 combines layers of three-capped triangular metal prisms (Si,B)[Ta(6+2)(Si,B)] alternating with double layers of two-capped Si[Ta(8+1)Si] Archimedian metal antiprisms. Consequently, the metal framework contains (B/Si) pairs and Si-Si dumbbells. These two types of coordination figures around the nonmetal atoms are typical for the system-inherent structures of Ta2B (or Ta2Si) and Ta3B2. DFT calculations showed strong B(Si)-B(Si) and Si-Si bonding and represent Ta7Si2(Si(x)B(1-x))2 as a covalent-ionic compound. This bonding behavior is reflected in the high hardness value of 1750 HV. The Sommerfeld constant, γ = 7.58 mJ/mol K(2), as derived from the electronic density of states, calculated at the Fermi level, suggests typical metallic behavior.

Thermoelectric properties of Bi-added Co4Sb12 skutterudites.

Void filling in (I) Bi(x)-added Co(4)Sb(12) or (II) Sb/Bi substitution of Co(4)Sb(12-x)Bi(x) has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb(3) skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi(0.75)Co(4)Sb(12), and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co(4)Sb(12).

Ti8(Ti(x)Mn(1-x))6Mn39 ('TiMn(~4)'): a metallic spin fluctuation system.

The crystal structure of Ti(8)(Ti(x)Mn(1-x))(6)Mn(39), x = 0.187, was obtained from x-ray single-crystal diffraction data, confirming it to have rhombohedral symmetry (space group [Formula: see text]; a(hex) = 1.100 70(2) nm, c(hex) = 1.944 11(4) nm; R(F) = 0.0293) and isotypism with the prototype Mo(0.38)Cr(0.16)Co(0.46) (the so-called R-phase). On the basis of electron probe micro-analyser results and structure determination, the homogeneity region of the phase TiMn(~4) was determined for temperatures in the range 800 °C < T < 1200 °C and is in between 16.0 at.% Ti and 20 at.% Ti. Various physical properties, determined in the temperature range from ~2 K to room temperature, characterize the compound with composition TiMn(4.26) as a metallic spin fluctuation system, evidenced from a T(3)lnT dependence of the heat capacity in combination with large values of the electronic Sommerfeld constant of the order of 140 mJ mol(-1) K(-2). The occurrence of a small anomaly in the heat capacity and magnetization data around 10 K is attributed to a scenario involving spin freezing phenomena, since a fraction of the order of 10% of all Mn-Mn distances within the unit cell are above a critical distance, where Mn atoms carry a spontaneous magnetic moment.

Cage-forming compounds in the Ba-Rh-Ge system: from thermoelectrics to superconductivity.

Phase relations and solidification behavior in the Ge-rich part of the phase diagram have been determined in two isothermal sections at 700 and 750 °C and in a liquidus projection. A reaction scheme has been derived in the form of a Schulz-Scheil diagram. Phase equilibria are characterized by three ternary compounds: τ(1)-BaRhGe(3) (BaNiSn(3)-type) and two novel phases, τ(2)-Ba(3)Rh(4)Ge(16) and τ(3)-Ba(5)Rh(15)Ge(36-x), both forming in peritectic reactions. The crystal structures of τ(2) and τ(3) have been elucidated from single-crystal X-ray intensity data and were found to crystallize in unique structure types: Ba(3)Rh(4)Ge(16) is tetragonal (I4/mmm, a = 0.65643(2) nm, c = 2.20367(8) nm, and R(F) = 0.0273), whereas atoms in Ba(5)Rh(15)Ge(36-x) (x = 0.25) arrange in a large orthorhombic unit cell (Fddd, a = 0.84570(2) nm, b = 1.4725(2) nm, c = 6.644(3) nm, and R(F) = 0.034). The body-centered-cubic superstructure of binary Ba(8)Ge(43)□(3) was observed to extend at 800 °C to Ba(8)Rh(0.6)Ge(43)□(2.4), while the clathrate type I phase, κ(I)-Ba(8)Rh(x)Ge(46-x-y)□(y), reveals a maximum solubility of x = 1.2 Rh atoms in the structure at a vacancy level of y = 2.0. The cubic lattice parameter increases with increasing Rh content. Clathrate I decomposes eutectoidally at 740 °C: κ(I) ⇔ (Ge) + κ(IX) + τ(2). A very small solubility range is observed at 750 °C for the clathrate IX, κ(IX)-Ba(6)Rh(x)Ge(25-x) (x ∼ 0.16). Density functional theory calculations have been performed to derive the enthalpies of formation and densities of states for various compositions Ba(8)Rh(x)Ge(46-x) (x = 0-6). The physical properties have been investigated for the phases κ(I), τ(1), τ(2), and τ(3), documenting a change from thermoelectric (κ(I)) to superconducting behavior (τ(2)). The electrical resistivity of κ(I)-Ba(8)Rh(1.2)Ge(42.8)□(2.0) increases almost linearly with the temperature from room temperature to 730 K, and the Seebeck coefficient is negative throughout the same temperature range. τ(1)-BaRhGe(3) has a typical metallic electrical resistivity. A superconducting transition at T(C) = 6.5 K was observed for τ(2)-Ba(3)Rh(4)Ge(16), whereas τ(3)-Ba(5)Rh(15)Ge(35.75) showed metallic-like behavior down to 4 K.

Type-I clathrate Ba8Ni(x)Si(46-x): phase relations, crystal chemistry and thermoelectric properties.

The phase relations, crystal structure and thermoelectric properties of the type-I solid solution Ba(8)Ni(x)Si(46-x) were investigated. Based on X-ray diffraction, differential thermal analysis and electron probe microanalysis data, a partial phase diagram was constructed for the Si-rich part of ternary system Ba-Ni-Si at 800 °C. The solubility range of Ni in the clathrate-I phase at 800 °C was determined (2.9 ≤x≤ 3.8) and thermoelectric properties, namely electrical resistivity, Seebeck-coefficient and thermal conductivity, were measured in the temperature range from 300 to 850 K. A shift of the thermoelectric properties from a predominantly metallic to a more semiconducting behavior was observed for an increasing Ni-content. Density functional calculations revealed a significant decrease of the gap width in the density of states induced by the incorporation of Ni. Electrical resistivity and Seebeck coefficients for Ba(8)Ni(x)Si(46-x) with 3.3 ≤x≤ 3.8 have been modeled within the rigid band approximation.

Phase relations and crystal structures in the system Ta-V-Ge.

Phase equilibria have been derived for the isothermal section of the Ta-V-Ge system at 1500 °C (for concentrations <45 at% Ge) on the basis of X-ray powder diffraction, EPMA and TEM analyses of argon arc melted alloys annealed in high vacuum at 1500 °C up to 200 hours. Four ternary phases have been identified within the isothermal section, out of which three were characterized by Rietveld refinement of X-ray powder diffraction data. τ(1)-(Ta(1-x)V(x))(5)Ge(3) (0.21 ≤ x ≤ 0.63) adopts the Mn(5)Si(3)-type and τ(2)-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.02, y = 0.12 was found to be a MgZn(2)-type Laves phase. Detailed transmission electron microscopy (TEM) in several crystallographic directions confirmed lattice parameters and crystal symmetry of this phase and rejected the presence of any superstructure. τ(3)-Ta(9-x+y)V(4+x-y-z)Ge(1+z), x = 0.32, y = 0.51, z = 0.98 crystallizes with the Nb(9)Co(4)Ge-type, whereas the structure of τ(4) is not yet known. Although a MgCu(2)-type cubic Laves phase is not present in the Ta-V binary at this temperature, additions of Ge stabilize this phase in the ternary system: C15-Ta(Ta(x)V(1-x-y)Ge(y))(2), x = 0.04, y = 0.05. V(11)Ge(8) (Cr(11)Ge(8) type) shows a large solubility up to (Ta(x)V(1-x))(11)Ge(8), x = 0.64 at 1500 °C.

Crystal structure of novel compounds in the systems Zr-Cu-Al, Mo-Pd-Al and partial phase equilibria in the Mo-Pd-Al system.

The crystal structures of three Al-rich compounds have been solved from X-ray single crystal diffractometry: τ(1)-MoPd(2-x)Al(8+x) (x = 0.067); τ(7)-Zr(Cu(1-x)Al(x))(12) (x = 0.514) and τ(9)-ZrCu(1-x)Al(4) (x = 0.144). τ(1)-MoPd(2-x)Al(8+x) adopts a unique structure type (space group Pbcm; lattice parameters a = 0.78153(2), b = 1.02643(3) and c = 0.86098(2) nm), which can be conceived as a superstructure of the Mo(Cu(x)Al(1-x))(6)Al(4) type. Whereas Mo-atoms occupy the 4d site, Pd(2) occupies the 4c site, Al and Pd(1) atoms randomly share the 4d position and the rest of the positions are fully occupied by Al. A Bärnighausen tree documents the crystallographic group-subgroup relation between the structure types of Mo(Cu(x)Al(1-x))(6)Al(4) and τ(1). τ(7)-Zr(Cu(1-x)Al(x))(12) (x = 0.514) has been confirmed to crystallize with the ThMn(12) type (space group I4/mmm; lattice parameters a = 0.85243(2) and c = 0.50862(3) nm). In total, 4 crystallographic sites were defined, out of which, Zr occupies site 2a, the 8f site is fully occupied by Cu, the 8i site is entirely occupied by Al, but the 8j site turned out to comprise a random mixture of Cu and Al atoms. The compound τ(9)-ZrCu(1-x)Al(4) (x = 0.144) crystallizes in a unique structure type (space group P4/nmm; lattice parameters a = 0.40275(3) and c = 1.17688(4) nm) which exhibits full atom order but a vacancy (14.4%) on the 2c site, shared with Cu atoms. τ(9)-ZrCu(1-x)Al(4) is a superstructure of Cu with an arrangement of three unit cells of Cu in the direction of the c-axis. A Bärnighausen tree documents this relationship. The ZrCu(1-x)Al(4) type (n = 3) is part of a series of structures which follow this building principle: Cu (n = 1), TiAl(3) (n = 2), τ(5)-TiNi(2-x)Al(5) (n = 4), HfGa(2) (n = 6) and Cu(3)Pd (n = 7). A partial isothermal section for the Al-rich part of the Mo-Pd-Al system at 860 °C has been established with two ternary compounds τ(1)-MoPd(2-x)Al(8+x) and τ(2) (unknown structure). The Vickers hardness (H(v)) for τ(1) was found to be 842 ± 40 MPa.

Compositional dependence of the thermoelectric properties of (Sr(x)Ba(x)Yb1₋2x)(y)Co4Sb12 skutterudites.

High temperature thermoelectric (TE) properties for triple-filled skutterudites (Sr(x)Ba(x)Yb1₋2x)(y)Co4Sb12 were investigated for alloy compositions in two sections of the system: (a) for x = 0.25 with a filling fraction y ranging from 0.1 to 0.25 and (b) for 0 < x < 0.5 and y = 0.11 + 0.259x. The representation of the figure of merit, ZT, as a function of skutterudite composition, defined the compositional range (0.25 < x < 0.4; 0.18 < y < 0.24) with ZT over 1.4 at 800 K. It was shown that an enhanced TE performance for these triple-filled skutterudites is caused by low electrical resistivities and low lattice thermal conductivities, as well as by a fine tuning of the chemical composition. Low temperature measurements for the samples with the highest ZT values showed that even a small change of the filler ratios changes the contribution of scattering effects, the carrier concentration and the mobility.

Phase relations and crystal structure of τ6-Ti2(Ti(0.16)Ni(0.43)Al(0.41))3.

Ti(2)(Ti(0.16)Ni(0.43)Al(0.41))(3) is a novel compound (labeled as τ(6)) in the Ti-rich region of the Ti-Ni-Al system in a limited temperature range 870 < T < 980 °C. The structure of τ(6)-Ti(2)(Ti,Ni,Al)(3) was solved from a combined analysis of X-ray single crystal and neutron powder diffracton data (space group C2/m, a = 1.85383(7) nm, b = 0.49970(2) nm, c = 0.81511(3) nm, and ß = 99.597(3)°). τ(6)-Ti(2)(Ti,Ni,Al)(3) as a variant of the V(2)(Co(0.57)Si(0.43))(3)-type is a combination of slabs of the MgZn(2)-Laves type and slabs of the Zr(4)Al(3)-type forming a tetrahedrally close-packed Frank-Kasper structure with pentagon-triangle main layers. Titanium atoms occupy the vanadium sites, but Ti/Ni/Al atoms randomly share the (Co/Si) sites of V(2)(Co(0.57)Si(0.43))(3). Although τ(6) shows a random replacement on 6 of the 11 atom sites, it has no significant homogeneity range (~1 at. %). The composition of τ(6) changes slightly with temperature. DSC/DTA runs (1 K/min) were not sufficient to define proper reaction temperatures due to slow reaction kinetics. Therefore, phase equilibria related to τ(6) were derived from X-ray powder diffraction in combination with EPMA on alloys, which were annealed at carefully set temperatures and quenched. τ(6) forms from a peritectoid reaction η-(Ti,Al)(2)Ni + τ(3) + α(2) ↔ τ(6) at 980 °C and decomposes in a eutectoid reaction τ(6) ↔ η + τ(4) + α(2) at 870 °C. Both reactions involve the η-(Ti,Al)(2)Ni phase, for which the atom distribution was derived from X-ray single crystal intensity data, revealing Ti/Al randomly sharing the 48f- and 16c-positions in space group Fd3̅m (Ti(2)Ni-type, a = 1.12543(3) nm). There was no residual electron density at the octahedral centers of the crystal structure ruling out impurity stabilization. Phase equilibria involving the τ(6) phase have been established for various temperatures (T = 865, 900, 925, 950, 975 °C, and subsolidus). The reaction isotherms concerning the τ(6) phase have been established and are summarized in a Schultz-Scheil diagram.

The system uranium-palladium-boron with U(2.5)Pd(20.5)B(6), a new heavy fermion compound.

Phase equilibria in the system U-Pd-B were established at 850 °C by light optical microscopy (LOM) and x-ray powder and single crystal diffraction. Whereas in as-cast alloys only one ternary compound, τ(1)-U(2 + x)Pd(21 - x)B(6), was found to form at x ∼ 0.5, a further compound τ(2) with hitherto unknown structure was observed in alloys annealed at 850 °C. Due to the formation of suitable single crystals, the crystal structures of two binary compounds, UB(12) and UPd(3) have been redetermined from high precision x-ray data. Similarly, the crystal structure of τ(1)-U(2.5)Pd(20.5)B(6) was investigated by single crystal x-ray diffraction (XRD) revealing isotypism with the Cr(23)C(6)-type, (space group [Formula: see text]; a = 1.1687(5) nm; R(F)(2) = Σ|F(0)(2) - F(c)(2)|/ΣF(0)(2) = 0.021). τ(1)-U(2 + x)Pd(21 - x)B(6) is a partially ordered compound where 0.37(1)U + 0.63Pd atoms randomly share the 4a site in (0, 0, 0). Whereas mutual solubility of U-borides and Pd-borides was found at 850 °C to be below 1.0 at.%, a large homogeneity region of fcc-Pd(U, B) extends into the ternary system. U(2.5)Pd(20.5)B(6) has metallic behavior; the ground state properties are determined from a balance of the Kondo effect and the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, revealing long range antiferromagnetic ordering below 6 K. An extraordinarily large Sommerfeld value (γ > 500 mJ mol(-1) K(-2)) groups U(2.5)Pd(20.5)B(6) among heavy fermion materials.

Phase formation and ground state properties of CeCo9Si4.

The phase relations of the CeCo(9 + δ)Si(4 - δ) system have been studied by means of scanning electron microscopy, electron microprobe analysis and x-ray diffraction. Essentially single phase samples CeCo(9 + δ)Si(4 - δ) (structure-type LaFe(9)Si(4) with space group I4/mcm) are formed in a narrow composition range - 0.3 ≤ δ < 0.1, where stoichiometric CeCo(9)Si(4) exhibits full structural order in space group I4/mcm. The evolution of the ground state of correlated 3d and 4f electrons in the solid solution CeCo(9 + δ)Si(4 - δ) has been investigated by dc susceptibility, magnetization, specific heat and resistivity measurements. Stoichiometric CeCo(9)Si(4) exhibits paramagnetic Kondo lattice behaviour with a largely reduced Co 3d contribution to the magnetic susceptibility as compared to nearly ferromagnetic LaCo(9)Si(4). Nonetheless, very similar to the solid solution LaCo(9 + δ)Si(4 - δ), weak ferromagnetism is observed in CeCo(9 + δ)Si(4 - δ) for δ > 0 and is attributed to substitutional disorder at the Si-sublattice.