RESUMO
The understanding of domain structures, specifically domain walls, currently attracts a significant attention in the field of (multi)-ferroic materials. In this article, we analyze contrast formation in full field electron microscopy applied to domains and domain walls in the uniaxial ferroelectric lithium niobate, which presents a large 3.8 eV band gap and for which conductive domain walls have been reported. We show that the transition from Mirror Electron Microscopy (MEM - electrons reflected) to Low Energy Electron Microscopy (LEEM - electrons backscattered) gives rise to a robust contrast between domains with upwards (Pup) and downwards (Pdown) polarization, and provides a measure of the difference in surface potential between the domains. We demonstrate that out-of-focus conditions of imaging produce contrast inversion, due to image distortion induced by charged surfaces, and also carry information on the polarization direction in the domains. Finally, we show that the intensity profile at domain walls provides experimental evidence for a local stray, lateral electric field.
RESUMO
We measure the thickness of the heavy water layer trapped under the stress corrosion fracture surface of silica using neutron reflectivity experiments. We show that the penetration depth is 65-85 ââÅ, suggesting the presence of a damaged zone of â¼100 ââÅ extending ahead of the crack tip during its propagation. This estimate of the size of the damaged zone is compatible with other recent results.
RESUMO
Amorphous silica density at ambient pressure is known to depend on thermal history (through the quenching rate) but also, at room temperature, on the maximum pressure applied in the past. Here we show that beyond density, a mechanical loading can endow the structure with an orientational order. Molecular dynamics simulations show evidence that amorphous silica develops a permanent anisotropic structure after extended shear plastic flow. This anisotropy which survives for an unstressed specimen is revealed markedly by the fabric tensor computed over the Si-O-Si orientations, albeit the SiO4 tetrahedra microstructure remains mostly unaltered.