Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient.

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements.

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

Efficient and controlled domain wall nucleation for magnetic shift registers.

Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires creating, manipulating and detecting domain walls in ferromagnetic strips. Recent observations have shown highly efficient current-driven domain wall dynamics in multilayers lacking structural symmetry, where the walls adopt a chiral structure and can be driven at high velocities. However, putting such a device into practice requires the continuous and synchronous injection of domain walls as the first step. Here, we propose and demonstrate an efficient and simple scheme for nucleating domain walls using the symmetry of the spin orbit torques. Trains of short sub-nanosecond current pulses are injected in a double bit line to generate a localized longitudinal Oersted field in the ferromagnetic strip. Simultaneously, other current pulses are injected through the heavy metal under the ferromagnetic strip. Notably, the Slonczewski-like spin orbit torque assisted by the Oersted field allows the controlled injection of a series of domain walls, giving rise to a controlled manner for writing binary information and, consequently, to the design of a simple and efficient domain wall shift register.