Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications.

This paper reports high-temperature optocouplers for signal galvanic isolation. Low temperature co-fired ceramic (LTCC) technology was used in the design and fabrication of the high-temperature optocoupler package. The optimal coupling behaviors, driving capabilities and response speed of the optocouplers were concentrated and investigated in this paper. Emitters and detectors with different emission and spectral wavelengths were studied to achieve optimal coupling behaviors. Relatively high coupling efficiency is achieved with emitters and detectors of emission and spectral wavelength in the red spectrum (i.e., 620-750 nm), leading to higher current transfer ratios (CTR). To further enhance the electrical performance, optocouplers with multiple detectors in parallel were designed and fabricated. CTR, leakage current and response speed (i.e., propagation delay, rise time and fall time) of the optocouplers were characterized over a range of temperatures from 25 to 250 °C. The CTR degrades at high temperatures, while the leakage current and response speed show little degradation with varying temperatures. Furthermore, the behaviors of the optocouplers with varying temperatures are modeled and analyzed.

Design and optimization of high temperature optocouplers as galvanic isolation.

The commercial InGaN-based (blue and green) and AlGaInP-based (red) multiple quantum well (MQW) lighting emitting diodes (LEDs) were studied in a wide range of temperatures up to 800 K for their light emission and detection (i.e., LEDs operated under reverse bias as photodiodes (PDs)) characteristics. The results indicate the feasibility of integrating a pair of selected LEDs to fabricate high temperature (HT) optocouplers, which can be utilized as galvanic isolation to replace the bulky isolation transforms in the high-density power modules. A detailed study on LEDs and PDs were performed. The external quantum efficiency (EQE) of the LED and PDs were calculated. Higher relative external quantum efficiency (EQE) and lower efficiency droops with temperatures are obtained from the blue and green LEDs for display compared with the blue one for lighting and red LED for display. The blue for lighting and red for display devices show superior responsivity, specific detectivity (D*), and EQE compared with blue and green for display when operated as PDs. The results suggest that red LED devices for display can be used to optimize HT optocouplers due to the highest wavelength overlapping compared with others.

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules.

A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed. Commercially available aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) double heterostructure is used both as emitter and photodetector in the proposed optocoupler. A detailed study on the electroluminescence and spectral response of the AlGaAs/GaAs structure is conducted at elevated temperatures. The material figure of merit parameter, D*, is calculated in the temperature range 77-800 K. The fabricated optocoupler is tested at elevated temperatures, and the results are presented.

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules.

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al0.05Ga0.45In0.5P/Al0.4Ga0.1In0.5P for display) are evaluated in range of temperature (77-800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.