Facile Fabrication of N-Type Flexible CoSb3-xTex Skutterudite/PEDOT:PSS Hybrid Thermoelectric Films.

Alongiside the growing demand for wearable and implantable electronics, the development of flexible thermoelectric (FTE) materials holds great promise and has recently become a highly necessitated and efficient method for converting heat to electricity. Conductive polymers were widely used in previous research; however, n-type polymers suffer from instability compared to the p-type polymers, which results in a deficiency in the n-type TE leg for FTE devices. The development of the n-type FTE is still at a relatively early stage with limited applicable materials, insufficient conversion efficiency, and issues such as an undesirably high cost or toxic element consumption. In this work, as a prototype, a flexible n-type rare-earth free skutterudite (CoSb3)/poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) binary thermoelectric film was fabricated based on ball-milled skutterudite via a facile top-down method, which is promising to be widely applicable to the hybridization of conventional bulk TE materials. The polymers bridge the separated thermoelectric particles and provide a conducting pathway for carriers, leading to an enhancement in electrical conductivity and a competitive Seebeck coefficient. The current work proposes a rational design towards FTE devices and provides a perspective for the exploration of conventional thermoelectric materials for wearable electronics.

Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates.

Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO2) in calcium chloride (CaCl2), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical reduction mechanism of SiO2 to form Si deposits on the graphite substrate. X-ray diffraction (XRD) along with Raman and photoluminescence (PL) results show that the crystallinity of the electrodeposited Si-films was improved with an increase of the applied reduction potential during the electrochemical process. Scanning electron microscopy (SEM) reveals that the size, shape, and morphology of the Si-layers can be controlled from Si nanowires to the microcrystalline Si particles by controlling the reduction potentials. In addition, the morphology of the obtained Si-layers seems to be correlated with both the substrate materials and particle size of the feed materials. Thus, the difference in the electron transfer rate at substrate/nano-SiO2 interface due to different applied reduction potentials along with the dissolution rate of SiO2 particles during the electrochemical reduction process were found to be crucial in determining the microstructural properties of the Si-films.

Physical and chemical aspects at the interface and in the bulk of CuInSe2-based thin-film photovoltaics.

Chalcopyrite CuInSe2 (CISe)-based thin-film photovoltaic solar cells have been attracting attention since the 1970s. The technologies of CISe-based thin-film growth and device fabrication processes have already been put into practical applications and today commercial products are available. Nevertheless, there are numerous poorly understood areas in the physical and chemical aspects of the underlying materials science and interfacial and bulk defect physics in CISe-based thin-films and devices for further developments. In this paper, current issues in physical and chemical studies of CISe-based materials and devices are reviewed. Correlations between Cu-deficient phases and the effects of alkali-metals, applications to lightweight and flexible solar minimodules, single-crystalline epitaxial Cu(In,Ga)Se2 films and devices, differences between Cu(In,Ga)Se2 and Ag(In,Ga)Se2 materials, wide-gap CuGaSe2 films and devices, all-dry processed CISe-based solar cells with high photovoltaic efficiencies, and also fundamental studies on open circuit voltage loss analysis and the energy band structure at the interface are among the main areas of discussion in this review.

Effects of incorporation of Ag into a kesterite Cu2ZnSnS4 thin film on its photoelectrochemical properties for water reduction.

Kesterite Cu2ZnSnS4 (CZTS) thin films in which the Cu site was partially replaced with Ag were prepared by spray deposition on an Mo-coated glass substrate. Successful replacement of Cu components in the CZTS lattice with Ag up to an Ag/(Cu + Ag) ratio of 0.20 was achieved. Samples with relatively low contents of Ag (Ag/(Cu + Ag) ratios of 0.05 and 0.10) showed obvious grain growth compared to that of bare CZTS, whereas samples with higher Ag contents showed an appreciable decrease in grain sizes. Photoelectrochemical properties for water reduction (H2 production), which was examined after surface modifications with an In2S3/CdS double layer and Pt catalyst for H2 evolution, depended strongly on such morphological differences; a maximum conversion efficiency, i.e., half-cell solar to hydrogen efficiency, of 2.4% was achieved by the photocathode based on the film with an Ag/(Cu + Ag) ratio of 0.10. Minority carrier dynamics examined by photoluminescence measurements indicated that such an active sample of PEC H2 production had a relatively long carrier lifetime, suggesting that the suppression of carrier recombination at grain boundaries in the bulk of these kesterite films is one of the important factors for enhancing PEC functions.

Optical and Electrical Transport Evaluations of n-Type Iron Pyrite Single Crystals.

Iron pyrite [cubic FeS2 (cFeS2)] is considered as an earth-abundant and low-cost thin-film photovoltaic material. However, the conversion efficiency of cFeS2-based solar cells remains below 3%. To elucidate this limitation, we evaluate the optical and electrical characteristics of cFeS2 single crystals that are grown using the flux method, thus providing us an understanding of the electron transport behavior of cFeS2 single crystals. The oxide layer on the surface of cFeS2, which can possibly have an influence on the electrical characteristics of cFeS2, is removed prior to characterization via optical spectroscopy and electrical transport measurement. The optical property of cFeS2 was found to have both indirect and direct transitions. We also observed the presence of a band tail below the conduction band. The obtained electrical transport behavior indicates that cFeS2 bulk exhibits a high defect density and a disordered phase, thus leading to the hopping conduction mechanism. Our results will pave the way for the development of photovoltaic applications with iron pyrite.

Effects of Zirconium Doping Into a Monoclinic Scheelite BiVO4 Crystal on Its Structural, Photocatalytic, and Photoelectrochemical Properties.

Effects of zirconium (Zr) doping into BiVO4 powder on its structural properties and photocatalytic activity for O2 evolution were examined. The formation of BiVO4 powder crystallized in a monoclinic scheelite structure (ms-BiVO4) was achieved when the sample was doped with a relatively small amount of Zr. The photocatalytic activity of Zr-doped ms-BiVO4 powder was much higher than that of non-doped ms-BiVO4. However, further doping caused a reduction of photocatalytic activity for O2 evolution due to the occurrence of structural alterations into tetragonal scheelite and tetragonal zircon structures. Similar effects of Zr doping were also observed for the photoelectrochemical (PEC) system based on BiVO4 thin films doped with various amounts of Zr. Thus, Zr doping was confirmed to be effective for improvements of photocatalytic and PEC functions of BiVO4 for water oxidation.

Improvement of Stability for Small Molecule Organic Solar Cells by Suppressing the Trap Mediated Recombination.

To understand the degradation mechanism of organic solar cells (OSCs), the charge dynamics of conventional and inverted planar heterojunction OSCs based on boron subthalocyanine chloride (SubPc) and fullerene (C60) with identical buffers during the air exposure were investigated. The results of light intensity dependent open circuit voltage show that the bimolecular recombination is dominated in the fresh devices, regardless of the device structure. The appearance of transient peak in photocurrent after turn-on and the light intensity independent turn-off traces in transient photocurrent suggest that the rapid degradation of conventional device is due to the energy loss originated from the aggravated trap mediated recombination. In contrast, the half-lifetime of inverted device is ∼25 times longer than the conventional one. The improvement of stability is ascribed to the decrease of the trap generation possibility and the suppression of trap mediated recombination in the case of inverted structure, where the penetration of oxygen and water through buffer layer is avoided.

Fullerene mixing effect on carrier formation in bulk-hetero organic solar cell.

Organic solar cells (OSCs) with a bulk-heterojunction (BHJ) are promising energy conversion devices, because they are flexible and environmental-friendly, and can be fabricated by low-cost roll-to-roll process. Here, we systematically investigated the interrelations between photovoltaic properties and the domain morphology of the active layer in OSCs based on films of poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2)/[6,6]-phenyl C71-butyric acid methyl ester (PC71BM) blend annealed at various temperatures (Tan). The scanning transmission X-ray microscopy (STXM) revealed that fullerene mixing (ΦFullerene) in the polymer matrix decreases with increase in Tan while the domain size (L) is nearly independent of Tan. The TEM-S mapping image suggests that the polymer matrix consist of polymer clusters of several nm and fullerene. We found that the charge formation efficiency (ΦCF), internal quantum efficiency (ΦIQ), and power conversion efficiency (PCE) are dominantly determined by ΦFullerene. We interpreted these observations in terms of the polymer clusters within the polymer matrix.