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1.
Nat Commun ; 10(1): 1097, 2019 03 07.
Artigo em Inglês | MEDLINE | ID: mdl-30846686

RESUMO

For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe spectroscopy. A feedback mechanism between the electron spin polarization and the nuclear system focuses the electron spin precession frequency into discrete spin modes. Employing such control of nuclear spin polarization, the electron spin lifetime within individual dots can surpass the limit of nuclear background fluctuations, thus substantially enhancing the spin coherence time. This opens the door to achieve long electron spin coherence times also in lithographically defined many-electron systems that can be controlled in shape, size and position.

2.
Nanotechnology ; 25(37): 375501, 2014 Sep 19.
Artigo em Inglês | MEDLINE | ID: mdl-25148257

RESUMO

Position sensing with resolution down to the scale of a single atom is of key importance in nanoscale science and engineering. However, only optical-sensing methods are currently capable of non-contact sensing at such resolution over a high bandwidth. Here, we report a new non-contact, non-optical position-sensing concept based on detecting changes in a high-gradient magnetic field of a microscale magnetic dipole by means of spintronic sensors. Experimental measurements show a sensitivity of up to 40 Ω/µm, a linear range greater than 10 µm and a noise floor of 0.5 pm/√[Hz]. Also shown is the use of the sensor for position measurements for closed-loop control of a high-speed atomic force microscope with a frame rate of more than 1 frame/s.

3.
Phys Rev Lett ; 109(8): 086601, 2012 Aug 24.
Artigo em Inglês | MEDLINE | ID: mdl-23002764

RESUMO

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(1)(-1) is proportional to T(0.6) for 0.1 K≤T≤10 K. Further, we investigate nuclear spin inhomogeneities.

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