GaInP on oxide nonlinear photonic crystal technology.

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6 dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

High Q factor InP photonic crystal nanobeam cavities on silicon wire waveguides.

High-quality (Q) factor indium phosphide (InP)-based 1D photonic crystal nanobeam cavities are fabricated on silicon on insulator waveguides. Through the optimization of the fabrication process, the intrinsic Q factor of these fully encapsulated nanocavities is demonstrated to attain values higher than 100,000. Experimental and numerical investigations are carried out on the impact, on the Q factor, of the strength of the evanescent wave coupling between the cavity and the waveguide. We reveal that this coupling can result in a modification of the electromagnetic field distribution in the resonant mode, which gives rise up to a factor 4 reduction in the intrinsic Q factor for the structures under study.

Single-mode monolithic GaSb Vertical-Cavity Surface-Emitting Laser.

We report on the fabrication and performances of an electrically-pumped GaSb monolithic VCSEL, i.e. ,a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel junction is used to provide current and optical confinement. Laser devices with a 6 µm tunnel-junction effective diameter operate at 2.3 µm in CW up to 70 °C, with a threshold current as low as 1.9 mA at 30 °C. The laser emission is single mode with a SMSR near 25 dB and mode-hop-free electro-thermal tunability around 14 nm. This is the first demonstration of a single-mode electrically-pumped monolithic GaSb-based VCSEL.