Heavy fermions vs doped Mott physics in heterogeneous Ta-dichalcogenide bilayers.

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic "1H"- and a Mott insulating "1T"-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation.

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit - ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

Symmetric Kondo Lattice States in Doped Strained Twisted Bilayer Graphene.

We use the topological heavy fermion (THF) model and its Kondo lattice (KL) formulation to study the possibility of a symmetric Kondo (SK) state in twisted bilayer graphene. Via a large-N approximation, we find a SK state in the KL model at fillings ν=0,±1,±2 where a KL model can be constructed. In the SK state, all symmetries are preserved and the local moments are Kondo screened by the conduction electrons. At the mean-field level of the THF model at ν=0,±1,±2,±3 we also find a similar symmetric state that is adiabatically connected to the symmetric Kondo state. We study the stability of the symmetric state by comparing its energy with the ordered (symmetry-breaking) states found in [H. Hu et al., Phys. Rev. Lett. 131, 026502 (2023).PRLTAO0031-900710.1103/PhysRevLett.131.026502, Z.-D. Song and B. A. Bernevig, Phys. Rev. Lett. 129, 047601 (2022).PRLTAO0031-900710.1103/PhysRevLett.129.047601] and find the ordered states to have lower energy at ν=0,±1,±2. However, moving away from integer fillings by doping the light bands, our mean-field calculations find the energy difference between the ordered state and the symmetric state to be reduced, which suggests the loss of ordering and a tendency toward Kondo screening. In order to include many-body effects beyond the mean-field approximation, we also performed dynamical mean-field theory calculations on the THF model in the nonordered phase. The spin susceptibility follows a Curie behavior at ν=0,±1,±2 down to ∼2 K where the onset of screening of the local moment becomes visible. This hints to very low Kondo temperatures at these fillings, in agreement with the outcome of our mean-field calculations. At noninteger filling ν=±0.5,±0.8,±1.2 dynamical mean-field theory shows deviations from a 1/T susceptibility at much higher temperatures, suggesting a more effective screening of local moments with doping. Finally, we study the effect of a C_{3z}-rotational-symmetry-breaking strain via mean-field approaches and find that a symmetric phase (that only breaks C_{3z} symmetry) can be stabilized at sufficiently large strain at ν=0,±1,±2. Our results suggest that a symmetric Kondo phase is strongly suppressed at integer fillings, but could be stabilized either at noninteger fillings or by applying strain.

Observation of Termination-Dependent Topological Connectivity in a Magnetic Weyl Kagome Lattice.

Engineering surfaces and interfaces of materials promises great potential in the field of heterostructures and quantum matter designers, with the opportunity to drive new many-body phases that are absent in the bulk compounds. Here, we focus on the magnetic Weyl kagome system Co3Sn2S2 and show how for the terminations of different samples the Weyl points connect differently, still preserving the bulk-boundary correspondence. Scanning tunneling microscopy has suggested such a scenario indirectly, and here, we probe the Fermiology of Co3Sn2S2 directly, by linking it to its real space surface distribution. By combining micro-ARPES and first-principles calculations, we measure the energy-momentum spectra and the Fermi surfaces of Co3Sn2S2 for different surface terminations and show the existence of topological features depending on the top-layer electronic environment. Our work helps to define a route for controlling bulk-derived topological properties by means of surface electrostatic potentials, offering a methodology for using Weyl kagome metals in responsive magnetic spintronics.

Moiré Pattern Formation in Epitaxial Growth on a Covalent Substrate: Sb on InSb(111)A.

Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior. Sb is predicted to show thickness-dependent topological properties, providing potential applications for low-energy-consuming electronic devices. Here we successfully synthesize ultrathin Sb films on semi-insulating InSb(111)A. Despite the covalent nature of the substrate, which has dangling bonds on the surface, we prove by scanning transmission electron microscopy that the first layer of Sb atoms grows in an unstrained manner. Rather than compensating for the lattice mismatch of -6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy. Our model calculations assign the moiré pattern to a periodic surface corrugation. In agreement with theoretical predictions, irrespective of the moiré modulation, the topological surface state known on a thick Sb film is experimentally confirmed to persist down to small film thicknesses, and the Dirac point shifts toward lower binding energies with a decrease in Sb thickness.

Mott Quantum Critical Points at Finite Doping.

We demonstrate that a finite-doping quantum critical point (QCP) naturally descends from the existence of a first-order Mott transition in the phase diagram of a strongly correlated material. In a prototypical case of a first-order Mott transition the surface associated with the equation of state for the homogeneous system is "folded" so that in a range of parameters stable metallic and insulating phases exist and are connected by an unstable metallic branch. Here we show that tuning the chemical potential, the zero-temperature equation of state gradually unfolds. Under general conditions, we find that the Mott transition evolves into a first-order transition between two metals, associated with a phase separation region ending in the finite-doping QCP. This scenario is here demonstrated solving a minimal multiorbital Hubbard model relevant for the iron-based superconductors, but its origin-the splitting of the atomic ground state multiplet by a small energy scale, here Hund's coupling-is much more general. A strong analogy with cuprate superconductors is traced.

Coulomb engineering of two-dimensional Mott materials.

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

Deep Learning the Functional Renormalization Group.

We perform a data-driven dimensionality reduction of the scale-dependent four-point vertex function characterizing the functional renormalization group (FRG) flow for the widely studied two-dimensional t-t^{'} Hubbard model on the square lattice. We demonstrate that a deep learning architecture based on a neural ordinary differential equation solver in a low-dimensional latent space efficiently learns the FRG dynamics that delineates the various magnetic and d-wave superconducting regimes of the Hubbard model. We further present a dynamic mode decomposition analysis that confirms that a small number of modes are indeed sufficient to capture the FRG dynamics. Our Letter demonstrates the possibility of using artificial intelligence to extract compact representations of the four-point vertex functions for correlated electrons, a goal of utmost importance for the success of cutting-edge quantum field theoretical methods for tackling the many-electron problem.

Evidence of a 2D Electron Gas in a Single-Unit-Cell of Anatase TiO2 (001).

The formation and the evolution of electronic metallic states localized at the surface, commonly termed 2D electron gas (2DEG), represents a peculiar phenomenon occurring at the surface and interface of many transition metal oxides (TMO). Among TMO, titanium dioxide (TiO2 ), particularly in its anatase polymorph, stands as a prototypical system for the development of novel applications related to renewable energy, devices and sensors, where understanding the carrier dynamics is of utmost importance. In this study, angle-resolved photo-electron spectroscopy (ARPES) and X-ray absorption spectroscopy (XAS) are used, supported by density functional theory (DFT), to follow the formation and the evolution of the 2DEG in TiO2 thin films. Unlike other TMO systems, it is revealed that, once the anatase fingerprint is present, the 2DEG in TiO2 is robust and stable down to a single-unit-cell, and that the electron filling of the 2DEG increases with thickness and eventually saturates. These results prove that no critical thickness triggers the occurrence of the 2DEG in anatase TiO2 and give insight in formation mechanism of electronic states at the surface of TMO.

Nature of Unconventional Pairing in the Kagome Superconductors AV_{3}Sb_{5} (A=K,Rb,Cs).

The recent discovery of AV_{3}Sb_{5} (A=K,Rb,Cs) has uncovered an intriguing arena for exotic Fermi surface instabilities in a kagome metal. Among them, superconductivity is found in the vicinity of multiple van Hove singularities, exhibiting indications of unconventional pairing. We show that the sublattice interference mechanism is central to understanding the formation of superconductivity in a kagome metal. Starting from an appropriately chosen minimal tight-binding model with multiple van Hove singularities close to the Fermi level for AV_{3}Sb_{5}, we provide a random phase approximation analysis of superconducting instabilities. Nonlocal Coulomb repulsion, the sublattice profile of the van Hove bands, and the interaction strength turn out to be the crucial parameters to determine the preferred pairing symmetry. Implications for potentially topological surface states are discussed, along with a proposal for additional measurements to pin down the nature of superconductivity in AV_{3}Sb_{5}.

Design and realization of topological Dirac fermions on a triangular lattice.

Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with hexagonal symmetry. Yet, in the majority of cases, this recipe leads to triangular lattices, typically hosting metals or trivial insulators. Here, we conceive and realize "indenene", a triangular monolayer of indium on SiC exhibiting non-trivial valley physics driven by local spin-orbit coupling, which prevails over inversion-symmetry breaking terms. By means of tunneling microscopy of the 2D bulk we identify the quantum spin Hall phase of this triangular lattice and unveil how a hidden honeycomb connectivity emerges from interference patterns in Bloch px ± ipy-derived wave functions.

Resistivity Exponents in 3D Dirac Semimetals From Electron-Electron Interaction.

We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned into an unusual T^{6} behavior. An analogous change affects the thermal transport, preserving the linearity in T of the ratio between thermal and electrical conductivities. These results hold from weak coupling up to the nonperturbative region of the Mott transition. Our findings yield a natural explanation for the hitherto not understood large exponents characterizing the temperature dependence of transport experiments on various topological semimetals.

Osmates on the Verge of a Hund's-Mott Transition: The Different Fates of NaOsO_{3} and LiOsO_{3}.

We clarify the origin of the strikingly different spectroscopic properties of the chemically similar compounds NaOsO_{3} and LiOsO_{3}. Our first-principle, many-body analysis demonstrates that the highly sensitive physics of these two materials is controlled by their proximity to an adjacent Hund's-Mott insulating phase. Although 5d oxides are mildly correlated, we show that the cooperative action of intraorbital repulsion and Hund's exchange becomes the dominant physical mechanism in these materials if their t_{2g} shell is half filled. Small material specific details hence result in an extremely sharp change of the electronic mobility, explaining the surprisingly different properties of the paramagnetic high-temperature phases of the two compounds.

Orbital-Driven Rashba Effect in a Binary Honeycomb Monolayer AgTe.

The Rashba effect is fundamental to the physics of two-dimensional electron systems and underlies a variety of spintronic phenomena. It has been proposed that the formation of Rashba-type spin splittings originates microscopically from the existence of orbital angular momentum (OAM) in the Bloch wave functions. Here, we present detailed experimental evidence for this OAM-based origin of the Rashba effect by angle-resolved photoemission (ARPES) and two-photon photoemission experiments for a monolayer AgTe on Ag(111). Using quantitative low-energy electron diffraction analysis, we determine the structural parameters and the stacking of the honeycomb overlayer with picometer precision. Based on an orbital-symmetry analysis in ARPES and supported by first-principles calculations, we unequivocally relate the presence and absence of Rashba-type spin splittings in different bands of AgTe to the existence of OAM.

Nonclassical Optical Properties of Mesoscopic Gold.

Gold nanostructures have important applications in nanoelectronics, nano-optics, and in precision metrology due to their intriguing optoelectronic properties. These properties are governed by the bulk band structure but to some extent are tunable via geometrical resonances. Here we show that the band structure of gold itself exhibits significant size-dependent changes already for mesoscopic critical dimensions below 30 nm. To suppress the effects of geometrical resonances and grain boundaries, we prepared atomically flat ultrathin films of various thicknesses by utilizing large chemically grown single-crystalline gold platelets. We experimentally probe thickness-dependent changes of the band structure by means of two-photon photoluminescence and observe a surprising 100-fold increase of the nonlinear signal when the gold film thickness is reduced below 30 nm allowing us to optically resolve single-unit-cell steps. The effect is well explained by density functional calculations of the thickness-dependent 2D band structure of gold.

Orbital Fingerprint of Topological Fermi Arcs in the Weyl Semimetal TaP.

The monopnictides TaAs and TaP are well-established Weyl semimetals. Yet, a precise assignment of Fermi arcs, accommodating the predicted chiral charge of the bulk Weyl points, has been difficult in these systems, and the topological character of different surface features in the Fermi surface is not fully understood. Here, employing a joint analysis from linear dichroism in angle-resolved photoemission and first-principles calculations, we unveil the orbital texture on the full Fermi surface of TaP(001). We observe pronounced switches in the orbital texture at the projected Weyl nodes, and show how they facilitate a topological classification of the surface band structure. Our findings establish a critical role of the orbital degrees of freedom in mediating the surface-bulk connectivity in Weyl semimetals.

Robust spin-polarized midgap states at step edges of topological crystalline insulators.

Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three-dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight-binding calculations identify them as spin-polarized flat bands connecting two Dirac points. This nontrivial origin provides the 1D midgap states with inherent stability and protects them from backscattering. We experimentally show that this stability results in a striking robustness to defects, strong magnetic fields, and elevated temperature.

Electronics with Correlated Oxides: SrVO(3)/SrTiO(3) as a Mott Transistor.

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO(3) on a SrTiO(3) substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO(3) are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.

Relevance of hybridization and filling of 3d orbitals for the Kondo effect in transition metal phthalocyanines.

Magnetic organic molecules, such as 3d transition metal phthalocyanines (TMPc), exhibit properties which make them promising candidates for future applications in magnetic data storage or spin-based data processing. Due to their small size, however, TMPc molecules are prone to quantum effects. For example, the interaction of uncompensated molecular spins with conduction electrons of the substrate may lead to the formation of a many-body singlet state, which gives rise to the so-called Kondo effect. Although the Kondo effect of TMPc molecules has been the object of several investigations, a consistent picture to describe under which conditions a Kondo state is formed is still missing. Here, we study the Kondo properties of MnPc on Ag(001) by means of the low-temperature scanning tunneling spectroscopy (LT-STS) measurements. Differential conductance dI/dU spectra reveal a zero-bias peak that is localized on the Mn ion site. Ab initio calculations combined with a many-body treatment of the multiorbital interaction show that the local Hund coupling favors the high-spin configuration on the 3d shell of the central TM atom. Therefore, each orbital gets close to its individual half-filling creating the necessary condition for many of the 3d orbitals to contribute to the observed Kondo resonance. This, however, happens only for the 3dz(2) orbital, whose hybridization to the substrate is much stronger than for the other orbitals thanks to its shape and its orientation.

Oxide heterostructures for efficient solar cells.

We propose an unexplored class of absorbing materials for high-efficiency solar cells: heterostructures of transition-metal oxides. In particular, LaVO(3) grown on SrTiO(3) has a direct band gap ∼1.1 eV in the optimal range as well as an internal potential gradient, which can greatly help to separate the photogenerated electron-hole pairs. Furthermore, oxide heterostructures afford the flexibility to combine LaVO(3) with other materials such as LaFeO(3) in order to achieve even higher efficiencies with band-gap graded solar cells. We use density-functional theory to demonstrate these features.