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1.
Spectrochim Acta A Mol Biomol Spectrosc ; 146: 286-91, 2015 Jul 05.
Artigo em Inglês | MEDLINE | ID: mdl-25819317

RESUMO

In this study, we have reported a fast and eco-benign procedure to synthesis silver nanoparticle at room temperature using potato (Solanum tuberosum) infusion along with the study of its photocatalytic activity on methyl orange dye. After addition of potato infusion to silver nitrate solution, the color of the mixture changed indicating formation of silver nanoparticles. Time dependent UV-Vis spectra were obtained to study the rate of nanoparticle formation with time. Purity and crystallinity of the biogenic silver nanoparticles were examined by X-ray diffraction (XRD). Average size and morphology of the nanoparticles were characterized by dynamic light scattering (DLS) and transmission electron microscopy (TEM). Fourier transform infra-red spectroscopy (FTIR) was employed to detect functional bio-molecules responsible that contribute to the reduction and capping of biosynthesized Ag nanoparticles. Further, these synthesized nanoparticles were used to investigate their ability to degrade methyl orange dye under sunlight irradiation and the results showed effective photocatalytic property of these biogenic silver nanoparticles.


Assuntos
Compostos Azo/química , Nanopartículas Metálicas/química , Processos Fotoquímicos , Prata/química , Solanum tuberosum/química , Catálise , Nanopartículas Metálicas/ultraestrutura , Microscopia Eletrônica de Transmissão , Espectroscopia de Infravermelho com Transformada de Fourier , Difração de Raios X
2.
J Nanosci Nanotechnol ; 13(10): 6826-34, 2013 Oct.
Artigo em Inglês | MEDLINE | ID: mdl-24245150

RESUMO

Unmodified and Pd modified Zinc Oxide (ZnO) hexagonal nanorods, grown by Chemical Bath Deposition (CBD), is reported in this paper for efficient detection of acetone vapor. After details structural characterization (XRD, FESEM and AFM) the nanorod based sensors were tested in resistive mode for detection of acetone in the concentration range of - 190-3040 ppm. By Pd surface modification the optimum working temperature was brought down from 350 degrees C (unmodified) to 300 degrees C with appreciable improvement in response magnitude (90% to 99%) also. Strikingly, the recovery time, after Pd modification, became faster than the corresponding response time up to certain concentrations range (190-1530 ppm) and above this concentration (> or = 1530-3040 ppm) response time was found to be faster than recovery time which is similar to the case with unmodified nanorods (for entire concentration range). There are earlier reports on such faster recovery (compared to response), but no proper explanation was provided. In this paper we tried to explain this apparent anomaly of recovery characteristics through concentration dependent reaction rate variation following Arrhenius equations. Also a correlation between the parameters of the corresponding electrical equivalent circuit of the sensor has been established.

3.
Nanotechnology ; 19(25): 255401, 2008 Jun 25.
Artigo em Inglês | MEDLINE | ID: mdl-21828650

RESUMO

The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

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